• Journal of IKEEE
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• v.27 no.3
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• pp.258-264
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• 2023

This paper proposes an LDO regulator with a built-in ESD (Electro Static Discharge) protection circuit to effectively operate and prevent destruction of the LDO (Low Drop Out) regulator according to the load current. The proposed LDO regulator can more effectively adjust the gate node voltage of the pass transistor according to the output voltage of the LDO regulator by using an additional feedback current circuit structure. In addition, it is expected to have high reliability for the ESD situation by embedding a new structure that increases the holding voltage by about 2V by reducing the current gain on the SCR loop by adding a P+ bridge to the existing ESD protection device.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2088-2090
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• 1998

A low-cost electronic starter is developed to decrease ignition failure significantly through successive starting trial and to prevent overheating at the end of fluorescent lamp life. Moreover, it has an additional feature of being capable of ignition at the recovered lamp voltage without any circuit correction. The developed electronic starter is consisted of four parts - a half wave rectifier circuit, a timer circuit, a switching circuit and a protection circuit. The protection circuit made up of a transistor and capacitors utilizing capacitive characteristics, carries out successive starting trial and end-of-life protection. Lamp ignition is completed within 0.5 seconds with taking advantage of a high preheating current from the half-wave rectifier circuit. Nevertheless, its performance is proved to be very excellent through a standard switching endurance test.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.12
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• pp.6-12
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• 2014

The safety and reliability of the power system short-circuit current, the short-circuit current depends on the failure to obtain the objective is to quickly eliminate the breaking capacity of the circuit-breaker selection of the cable, the insulation of electrical equipment and protective relay an important factor in determining the level correction and protective relay selection scheme to be meaningful. Standards used in the domestic circuit breaker is applied to the production of IEC standard, but the American National Standards (ANSI / IEEE) by NEMA specification of the fault current calculations and the application of the asymmetric coefficient Korea. Therefore, in this paper, the IEC 60909 standard IEC breaker fault current calculation method and the method for selection of system configurations reviewed and protection system for reviewing the configuration of various protective relays appropriate correction and the correction value is main protection, back-up protection the equipment so that the period of protection relay coordination to minimize accidents and accident protection to minimize interruptions proposed for cooperation.

• Journal of Power Electronics
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• v.2 no.2
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• pp.88-94
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• 2002

The demand for protection of power electronic application has during the last couple of vears increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight inductance over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection of adding inductance of existing High-speed and new Typower Fuse protection. First, the problem of adding inductance of exiting High-speed and new Typower Fuse DC-link circuit is treated, second a short discussion of protection of the IGBT module is done, and finally, the impect of the high frwquency loading on the currying capability of the fuses is presented.

• Journal of IKEEE
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• v.19 no.2
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• pp.265-270
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• 2015

In this paper, we proposed a dual-directional SCR (silicon-controlled rectifier) based ESD (electrostatic discharge) protection circuit. In comparison with conventional SCR, this ESD protection circuit can provide an effective protection against ESD pulses in the two opposite directions, so the ESD protection circuit can be discharged in two opposite direction. The proposed circuit has a higher holding voltage characteristic than conventional SCR. These characteristic enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. it was analyzed to figure out electrical characteristics in term of individual design parameters. They are investigated by using the Synopsys TCAD simulator. In the simulation results, it has trigger voltage of 6.5V and holding voltage increased with different design parameters. The holding voltage of the proposed circuit changes from 2.1V to 6.3V and the proposed circuit has symmetrical I-V characteristic for positive and negative ESD pulse.

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.5
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• pp.665-674
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• 2018

In this paper, we propose a development results of a D-type non-rechargeable lithium battery($Li/SOCl_2$) on improvement in a low cost protection circuit of discharge for domestic military power source. According to this study, we describe a new design and product with 8-bit microcontroller in the protection circuit which can estimate state of health of the battery regardless of occurring an initial voltage delay. Also this paper discuss and facilitate development as solution to a safety about the non-rechargeable lithium batteries. As a result, we verified a quality of the protection circuit by a development test and evaluation(DT&E) process.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.80-83
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• 2001

We studied on effective quench protection method to prevent damage from unexpected quench of superconducting magnet for magnetic resonance imaging. And we suggested quench protection circuit that is combined with several protection techniques. This circuit has the capacity to maintain the symmetric nature of the magnetic field and the active shielding effect and to protect shim coils during a quench.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.

• Proceedings of the KIEE Conference
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• 2005.07d
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• pp.3019-3021
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• 2005

In this paper we suggest a novel temperature detection method utilized in direct over-temperature protection circuit modeling. The suggested model detects temperature variation using Rds(on) characteristics of MOSFET, while the conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. The temperature-dependant MOSFET model is implemented using Spice ABM(Spice Analog Behavior Model). The direct over-temperature protection circuit was designed including it. We verified effectiveness of the temperature dependant Rds(on) model characteristics and performance of the direct over-temperature protection circuit on PSpice simulation

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.6
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• pp.530-536
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• 2000