• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.79-85
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• 2016

For long life time and high efficiency, not necessary in improvement of LED chip structure, but also improve heat radiation for decrease heat in LED chip. In this study, efficiency decline factor has been investigated in LED lamp as study heat characteristic, luminance flux and heat resistance. When LED lamp temperature was increased, about 7% loss of luminance flux. In consequence of temperature analysis, width of fin was the most important factor of heat radiation. As a result, secure the enough heat path is very important factor of LED lamp design.

• 전자공학회논문지 IE
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• v.45 no.4
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• pp.42-46
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• 2008

LED's production does Die bonding and Wire bonding on L/F board, and do epoxy dispensing to protect LED Chip and improve brightness. In this paper, we propose and realize a x-y-z axis robot mechanism detecting automatically eopxy's amount being filled, control data of pressure and time by the quantity automatic revision, and epoxy of the schedule amount dispensing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.1117-1118
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• 2010

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1285-1285
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• 2015

현재 전력난에 의해 에너지 절감이라는 말은 가정 및 산업 현장 곳곳에서 들을 수 있다. 에너지 절감 대책 중 하나가 몇 년전 정부에서 발표한 백열등 수입 및 유통금지가 있다. 그 효과로 LED 산업이 각광 받게 되었다. 다양한 LED 산업 및 기술에서도 신뢰성 및 성능 분야는 항상 진화하고 많은 기업들이 집중하고 있다. LED에서 중요한 요소인 방열성능을 개선시키기 위해 많은 연구를 행하고 있다. 그리고 광원 개발분야에서도, 반도체 광원의 LED PKG의 다량 실장으로 고출력을 행하는 것 보다는 기판위에 Blue Chip을 실장하여 제작하는 고출력 광원의 기술로 집중되고 있다. 이 논문에서는 고출력 광원인 COB(Chip On Board) LED의 방열성능 개선을 다루었다. 기판의 구조 변형으로 방열특성 개선 대안을 제시하였다. Via hole과 Cavity를 이용한 구조를 제안하였다. 그에 대한 해석 방법으로는, 구조적인 해석과 수치적인 해석을 활용하였다. 그 결과로는 약 13~40%의 방열성능 개선을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.19-23
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• 2014

For the application of light-emitting diodes (LEDs) for general illumination, the development of high power LEDs chips became more essential. For these reasons, recently, modified vertical LEDs have been developed to meet various requirements such as better heat dissipation, higher light extraction and less cost of production. In this research, we investigate the effect of Size and Array of N-GaN contact on operation voltage with new structured padless vertical LED. We changed the size and array of N-electrodes and investigated how they affect the operation voltage of LEDs. We simulated the current crowding and expected operation voltage for different N-contact structures with commercial LED simulator. Also, we fabricated the padless vertical LED chips and measured the electrical property. From the simulation, we could know that the larger size and denser array of n-electrodes could make operation voltage decrease. These results are well in accordance with those measured values of real padless vertical LED chips.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.275-286
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• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.

• Korean Journal of Optics and Photonics
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• v.21 no.3
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• pp.118-122
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• 2010

We fabricated a high power LED lamp structure which utilizes the modified COB concept based on an MCPCB with insulation layer partially removed. In the proposed structure, no insulation layer exists between the LED chip and the metal base. As a result, the heat generated in the chip is easily dissipated through the metal base. In actual measurement as well as in thermal simulation, the fabricated LED lamp structure showed superb thermal properties, compared to the SMD LED lamp attached on an MCPCB or the LED lamp based on conventional COB concept.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Current Optics and Photonics
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• v.4 no.3
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• pp.247-252
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• 2020

Important determinants for selecting outdoor lighting are the color-rendering index (CRI) and scotopic-to-photopic (S/P) ratio of the lighting units. The higher the S/P ratio, the better energy savings and visual performance. In this study, CCT-tunable LED lighting units were optimized and fabricated by spectral combination of red, green, blue, and yellow LEDs. The measured results for RGB LEDs provided S/P ratios of 1.55~2.58 and those of RGBY LEDs gave 1.46~2.46 to the correlated color temperatures (CCTs) ranging from 2700 K to 6500 K, with CRI values of over 80 at the same time.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.154-156
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• 2006

A few ten mW white LED can substitute for the indicator light source and it is required to study several watt multi-chip semiconductor light sources in order to replace the light sources for general illumination such as incandescent lights and fluorescent lanes. Since the optical technology used for several mW white LED light source uses only 30% to 52% of the light it is required to develop the design technology of optical system and lens to improve the efficiency more than 80% for insuring the high power of white LED. In this paper, we designed and fabricated new structure reflector to increase the efficiency and is easy to make high power multi-chip LED lamp.