• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1805-1808
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• 2006

In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.17-17
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• 2015

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.186.1-186.1
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• 2014

Graphene, which is a 2-dimensional carbon material, has been attracting much interest due to its unique properties and potential applications. So far, many interesting experimental and theoretical works have been done concerning the electronic properties of graphene on various substrates. Especially, there are many experimental reports about doping in graphene which is caused by interaction between graphene and its supporting substrates. Here, we report the study of charge transfer between graphene and oxide substrates using density functional theory (DFT) calculations. In this study, we have investigated the charge transfer related with graphene considering various oxide substrates such as SiO2(0001) and MgO(111). Details in charge transfer between graphene and oxides are analyzed in terms of charge density difference, band structure and work function.

• Polymer(Korea)
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• v.29 no.4
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• pp.363-367
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• 2005

The effects of organic solvent on the charge transport behavior of poly (3,4-ethylenedioxythioph one)/p-toluene-sulfonate(PEDOT-OTs) are investigated. The use of different organic solvents during the oxidative chemical polymerization of 3,4-ethylenedioxythiophene (EDOT) with Iron(III) -tosylate can greatly vary the DC conductivity of PEDOT-OTs along with molecular structure and doping concentration. For example, PEDOT-OTs prepared from methanol shows the conductivity of 19.5 S/cm, which is an increase by a factor of $10^8$ compared to PEDOT-OTa prepared from acetone. From the X-ray diffraction (XRD) experiments, it was found that PEDOT-OTs with ketone is amorphous state, while PEDOT-OTs with alcoholic solvent shows the better defined crystalline structure in which the charge transport along and between the PEDOT chains are promoted. Chemical analysis employing X-ray photoelectron spectroscopy (XPS) revealed that the doping concentration of PEDOT-OTs with alcoholic solvent is much higher than that of PEDOT-OTs with ketones. It is proposed that the interactions between the organic solvent and doping anion can cause the variation in doping concentration and, therefore, result in the PEDOT-OTs of different conductivities and chain structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.249-254
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• 2008

Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

• Corrosion Science and Technology
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• v.22 no.6
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• pp.408-418
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• 2023

In this study, we synthesized and characterized garnet-type Li_7-xAl_xLa₃Zr_2-(5/4)yNbyO₁₂ (LALZN) solid electrolytes for all-solid-state battery applications. Our novel approach focused on enhancing ionic conductivity, which is crucial for battery efficiency. A systematic examination found that co-doping with Al and Nb significantly improved this conductivity. Al³⁺ and Nb⁵⁺ ions were incorporated at Li⁺ and Zr⁴⁺ sites, respectively. This doping resulted in LALZN electrolytes with optimized properties, most notably enhanced ionic conductivity. An optimized mixture with 0.25 mol each of Al and Nb dopants achieved a peak conductivity of 1.32 × 10^-4 S cm^-1. We fabricated symmetric cells using these electrolytes and observed excellent charge-discharge profiles and remarkable cycling longevity, demonstrating the potential for long-term application in battery systems. The garnet-type LALZN solid electrolytes, with their high ionic conductivity and stability, show great potential for enhancing the performance of all-solid-state batteries. This study not only advances the understanding of effective doping strategies but also underscores the practical applicability of the LALZN system in modern energy storage solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.453-457
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• 2005

Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1609-1612
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• 2006

Transient currents were measured in nematic liquid-crystal cells with and without doping of multiwalled carbon nanotubes. Comparative results suggest that the field-screening effect induced by the adsorbed charge is substantially suppressed by the carbon-nanotube dopant, leading to a reduction of the driving voltage and improved performance of display properties.