• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.24-31
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• 2003

Short channel effects (SCE) of bulk MOSFET with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate MOSFET have been analyzed using a evanescent-mode analysis. Analytical equations of the characteristics scaling-length (λ) for three structures have been derived and the accuracy of the calculated λ was verified by comparing to the device simulation result. It is found that the minimum channel length should be larger than 5λ and the depletion thickness of the SSR should be around 30 nm in order to be applicable to 70 nm CMOS technology. High-$textsc{k}$ dielectric shows a limitation in scaling due to the drain-field penetration through the dielectric unless the equivalent SiO2 thickness is very thin.

• Journal of the Korean Society of Combustion
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• v.17 no.4
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• pp.30-37
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• 2012

The flame lengths and NOx emission characteristics of syngas $H_2$/CO turbulent non-premixed jet flames were investigated. The flame length which is the main parameter governs NOx emission was studied for various syngas compositions. The flame length was compared with previous correlation between Froude number and flame height and it shows that they have good agreements. It was confirmed that the turbulent jet flames herein investigated are in the region of buoyancy-momentum transition. NOx emission was reduced with increased Reynolds number and CO contents in syngas fuel and with decreased fuel nozzle diameter which is attributed by decreased flame residence time. Previous EINOx scaling based on flame residence time of $L_f^3/(d_f^2U_f)$ satisfies only the jet flame in momentum-dominated region, not buoyancy-momentum transition region. The simplified flame residence time ($L_f/U_f$) was adopted in modified EINOx scaling. The modified scaling satisfies the jet flames not only in momentum-dominated region but in buoyancy-momentum transition region. The scaling is also satisfied with $H_2$/CO syngas jet flames.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.480-484
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• 2000

The channel length influence of n-channel Si-based FETs is investigated by computer simulation. Using a two-dimensional hydrodynamic model, devices having various gate length are examined. We have observed the characteristics of LDD model of MOSFET by investigating of their current, voltage, electric field and impact ionization. These devices are scaled using various factors. We have analyzed I-V characteristics and the effect of impact ionization according to channel length.

• The KSFM Journal of Fluid Machinery
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• v.19 no.5
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• pp.50-60
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• 2016

A design methodology of the modeled test facility to conserve an injection performance of a passive safety injection system is proposed. This safety injection system is composed of a core makeup tank and a safety injection tank. Individual tanks are connected with pressure balance line on the top side and injection line on the bottom side. It is important to conserve the scaled initial injection flow rate and total injection time since this system can be operated by small gravity head without any active pumps. Differential pressure distribution of the injection line induced by the gravity head is determined by the vertical length and elevation of each tank. However, the total injection time is adjustable by the flow resistance coefficient of the injection line. The scaling methodology for the tank and flow resistance coefficient is suggested. A key point of this test facility design is a scaling analysis for the flow resistance coefficient. The scaling analysis proposed on this paper is based on the volume scaling law with the same vertical length to the prototype and can be extended to a model with a reduced vertical length. A set of passive injection test were performed for the tanks with the same volume and the different length. The test results on the initial flow rate and total injection time showed the almost same injection characteristics and they were in good agreement with the design values.

• Journal of Korean society of Dental Hygiene
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• v.15 no.6
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• pp.1107-1116
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• 2015

Objectives: The purpose of this study was to examine awareness and satisfaction toward health insurance coverage of scaling. Methods: A self-reported questionnaire was completed by 221 patients receiving scaling service from July to August, 2014. The informed consent was approved after the explanation of purpose of the study. The questionnaire consisted of general characteristics of the subjects, awareness toward health insurance coverage of scaling, scaling service covered by health insurance, and satisfaction with health insurance service. Results: Those recognizing the health insurance service extension accounted for 87.3 percent and 67.4 percent answered that the appropriate coverage age would be 20 years old. The recommendable frequency of scaling was once a year and this accounted for 49.3 percent. Fifty percent of the subjects thought health insurance coverage of scaling would be reasonable and 34.8 percent acquired the information from mass media. The most common service providers were dental hygienists and the length of service was from 20 to 30 minutes. The contents of service included scaling service, toothbrushing method, and oral care. The satisfaction was 4.39 points. Conclusions: The health insurance coverage of scaling will improve the oral health and quality of life in Korean adults. So the government should try to extend the scaling coverage by health insurance and the frequency of scaling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.1-8
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• 2005

In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• Journal of the Korean Society of Combustion
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• v.5 no.1
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• pp.19-30
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• 2000

The characteristics of NOx emissions in pure hydrogen nonpremixed flames with coaxial air are analyzed numerically for the three model cases of coaxial air flames classified by varying coaxial air velocity and/or fuel velocity. In coaxial air flames, the flame length is reduced by coaxial air and can be represented as a function of the ratio of coaxial air to fuel velocity. Coaxial air decreases flame reaction zone, resulting in reducing flame residence time significantly. Finally, the large reduction of EINOx is achieved by the decrease of the flame residence time. It is found that because coaxial air can break down the flame self-similarity law, appropriate scaling parameters, which are different from those in the simple jet flames, are recommended. In coaxial air flames, the flame residence time based on the flame volume produces better results than that based on a cube of the flame length. And some portion of deviations from the 1/2 scaling law by coaxial air may be due to the violation of the linear relationship between the flame volume and the flame reaction zone.