• 제목/요약/키워드: channel implant

검색결과 54건 처리시간 0.024초

CMOS 공정으로 구현한 고전압 LDMOSFET의 전기적 특성 (Electrical Characteristics of High-Voltage LDMOSFET Fabricated by CMOS Technology)

  • 박훈수;이영기;권영규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.201-202
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    • 2005
  • The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

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일부 노인층의 틀니, 임플란트 건강보험에 대한 인식도 연구 (A Study on the Recognition about National Health Insurance Coverage of Denture, Implant of Elderly People)

  • 오상환;이유정;이유진;이정미;이주희;김설희
    • 치위생과학회지
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    • 제14권4호
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    • pp.502-509
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    • 2014
  • 노인틀니와 임플란트 건강보험 지원사업에 대한 인식과 개선요구도를 조사하기 위해 2014년 6~7월 기간 동안 일부 지역사회의 60세 이상 238명을 대상으로 틀니와 임플란트 보험적용과 개선에 관한 설문조사를 하였으며 다음과 같은 결론을 얻었다. 대상자의 틀니 보험적용 인식은 76.9%였으나 틀니 적용시기와 보험 지원비용의 적절성, 임플란트 보험 적용 인식은 50% 미만으로 낮게 나타났다. 특히 틀니 사후관리 인식은 18.6%로 매우 낮게 조사되었다. 건강보험 급여화 개선요구 조사결과 틀니 적용시기는 60세 이상(42.5%), 임플란트 적용시기는 65세 이상(34.6%)이었고, 건강보험비 자부담은 50% (34.6%)가 가장 높게 조사되었다. 틀니 재제작 기간과 임플란트 지원은 무제한이 각각 32.0%, 47.8%로 가장 높게 조사되었으며, 치과위생사의 구강(틀니) 관리의 참여희망은 94.1%로 높게 조사되었다. 결론적으로 틀니와 임플란트 인식은 높았으나 세부적인 운영사항은 인식하지 못하여 지속적인 정보제공이 필요하며, 건강보험 지원연령을 낮추는 방안이 고려되어 건강보험지원사업의 효율성을 높여야 할 것으로 생각된다.

Effects of NaOCl on the Intracellular Calcium Concentration in Rat Dorsal Root Ganglion Neurons

  • Lee, Hae-In;Chun, Sang-Woo
    • International Journal of Oral Biology
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    • 제35권3호
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    • pp.129-135
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    • 2010
  • Recent studies have implicated reactive oxygen species (ROS) as determinants of the pathological pain caused by the activation of peripheral neurons. It has not been elucidated, however, how ROS activate the primary sensory neurons in the pain pathway. In this study, calcium imaging was performed to investigate the effects of NaOCl, a ROS donor, on the intracellular calcium concentration ($[Ca^{2+}]i$) in acutely dissociated dorsal root ganglion (DRG) neurons. DRG was sequentially treated with 0.2 mg/ml of both protease and thermolysin, and single neurons were then obtained by mechanical dissociation. The administration of NaOCl then caused a reversible increase in the $[Ca^{2+}]i$, which was inhibited by pretreatment with phenyl-N-tertbuthylnitrone (PBN) and isoascorbate, both ROS scavengers. The NaOCl-induced $[Ca^{2+}]i$ increase was suppressed both in a calcium free solution and after depletion of the intracellular $Ca^{2+}$ pool by thapsigargin. Additionally, this increase was predominantly blocked by pretreatment with the transient receptor potential (TRP) antagonists, ruthenium red ($50\;{\mu}M$) and capsazepine ($10\;{\mu}M$). Collectively, these results suggest that an increase in the intracellular calcium concentration is produced from both extracellular fluid and the intracellular calcium store, and that TRP might be involved in the sensation of pain induced by ROS.

OFDM의 심벌 타이밍 옵셋 추정을 위한 1심벌 옵셋의 훈련심벌 사용법과 CP 출력조절법 (Symbol timing Offset Estimation for OFDM Using the 1 Symbol Offset Training Symbol and Controled CP Power)

  • 옥윤철;하영호
    • 전자공학회논문지
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    • 제50권12호
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    • pp.3-13
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    • 2013
  • 이 논문에서는 OFDM 시스템의 시간 영역 동기를 위한 2가지 방법을 제안한다. 이것은 심벌타이밍 판정의 모호함의 원인이되는 플레토와 사이드로브를 제거하기 위하여 부 심벌간에 1심벌 옵셋을 두고 타이밍 메트릭을 구하는 방법과 플레토 현상을 경감시킬 수 있는 전력감소지수(Reduction Factor, ${\rho}$), 제동상수(Break Constant, ${\beta}_k$) 그리고 심벌이식깊이(Implant Depth, ${\delta}_I$)등의 파라메터를 사용하여 CP(Cyclic Prefix) 구간의 전력을 수정하는 방법이다. 제안된 2가지 방법은 기존에 제안된 심벌타이밍 동기화기법들과 컴퓨터모의시험을 통해서 성능평가가 이루어졌으며, 제안된 방법들은 다중경로의 레일레이 페이딩채널에서 기존의 시스템에 비해서 더 우수한 통계적 특성을 나타내었다.

Ryanodine Receptor-mediated Calcium Release Regulates Neuronal Excitability in Rat Spinal Substantia Gelatinosa Neurons

  • Park, Areum;Chun, Sang Woo
    • International Journal of Oral Biology
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    • 제40권4호
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    • pp.211-216
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    • 2015
  • Nitric Oxide (NO) is an important signaling molecule in the nociceptive process. Our previous study suggested that high concentrations of sodium nitroprusside (SNP), a NO donor, induce a membrane hyperpolarization and outward current through large conductances calcium-activated potassium ($BK_{ca}$) channels in substantia gelatinosa (SG) neurons. In this study, patch clamp recording in spinal slices was used to investigate the sources of $Ca^{2+}$ that induces $Ca^{2+}$-activated potassium currents. Application of SNP induced a membrane hyperpolarization, which was significantly inhibited by hemoglobin and 2-(4-carboxyphenyl) -4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide potassium salt (c-PTIO), NO scavengers. SNP-induced hyperpolarization was decreased in the presence of charybdotoxin, a selective $BK_{Ca}$ channel blocker. In addition, SNP-induced response was significantly blocked by pretreatment of thapsigargin which can remove $Ca^{2+}$ in endoplasmic reticulum, and decreased by pretreatment of dentrolene, a ryanodine receptors (RyR) blocker. These data suggested that NO induces a membrane hyperpolarization through $BK_{ca}$ channels, which are activated by intracellular $Ca^{2+}$ increase via activation of RyR of $Ca^{2+}$ stores.

Bi-CMOS공정중 SSR 채널 형성을 위한 $Sb_2O_3$ 빔튜닝 방법 연구 (A Study of $Sb_2O_3$ Beam Tuning for SSR Channel on Bi-CMOS Process)

  • 최민호;김남훈;김상용;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.369-372
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    • 2004
  • The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.

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Reactive Oxygen Species and Nitrogen Species Differentially Regulate Neuronal Excitability in Rat Spinal Substantia Gelatinosa Neurons

  • Lee, Hae In;Park, A-Reum;Chun, Sang Woo
    • International Journal of Oral Biology
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    • 제39권4호
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    • pp.229-236
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    • 2014
  • Reactive oxygen species (ROS) and nitrogen species (RNS) are implicated in cellular signaling processes and as a cause of oxidative stress. Recent studies indicate that ROS and RNS are important signaling molecules involved in nociceptive transmission. Xanthine oxidase (XO) system is a well-known system for superoxide anions ($O{_2}^{{\cdot}_-}$) generation, and sodium nitroprusside (SNP) is a representative nitric oxide (NO) donor. Patch clamp recording in spinal slices was used to investigate the role of $O{_2}^{{\cdot}_-}$ and NO on substantia gelatinosa (SG) neuronal excitability. Application of xanthine and xanthine oxidase (X/XO) compound induced membrane depolarization. Low concentration SNP ($10{\mu}M$) induced depolarization of the membrane, whereas high concentration SNP (1 mM) evoked membrane hyperpolarization. These responses were significantly decreased by pretreatment with phenyl N-tert-butylnitrone (PBN; nonspecific ROS and RNS scavenger). Addition of thapsigargin to an external calcium free solution for blocking synaptic transmission, led to significantly decreased X/XO-induced responses. Additionally, X/XO and SNP-induced responses were unchanged in the presence of intracellular applied PBN, indicative of the involvement of presynaptic action. Inclusion of GDP-${\beta}$-S or suramin (G protein inhibitors) in the patch pipette decreased SNP-induced responses, whereas it failed to decrease X/XO-induced responses. Pretreatment with n-ethylmaleimide (NEM; thiol-alkylating agent) decreased the effects of SNP, suggesting that these responses were mediated by direct oxidation of channel protein, whereas X/XO-induced responses were unchanged. These data suggested that ROS and RNS play distinct roles in the regulation of the membrane excitability of SG neurons related to the pain transmission.

Sealing capability and marginal fit of titanium versus zirconia abutments with different connection designs

  • Sen, Nazmiye;Sermet, Ibrahim Bulent;Gurler, Nezahat
    • The Journal of Advanced Prosthodontics
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    • 제11권2호
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    • pp.105-111
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    • 2019
  • PURPOSE. Limited data is available regarding the differences for possible microleakage problems and fitting accuracy of zirconia versus titanium abutments with various connection designs. The purpose of this in vitro study was to investigate the effect of connection design and abutment material on the sealing capability and fitting accuracy of abutments. MATERIALS AND METHODS. A total of 42 abutments with different connection designs [internal conical (IC), internal tri-channel (IT), and external hexagonal (EH)] and abutment materials [titanium (Ti) and zirconia (Zr)] were evaluated. The inner parts of implants were inoculated with $0.7{\mu}L$ of polymicrobial culture (P. gingivalis, T. forsythia, T. denticola and F. nucleatum) and connected with their respective abutments under sterile conditions. The penetration of bacteria into the surrounding media was assessed by the visual evaluation of turbidity at each time point and the number of colony forming units (CFUs) was counted. The marginal gap at the implant- abutment interface (IAI) was measured by scanning electron microscope. The data sets were statistically analyzed using Kruskal-Wallis followed by Mann-Whitney U tests with the Bonferroni-Holm correction (${\alpha}=.05$). RESULTS. Statistically significant difference was found among the groups based on the results of leaked colonies (P<.05). The EH-Ti group characterized by an external hexagonal connection were less resistant to bacterial leakage than the groups EH-Zr, IT-Zr, IT-Ti, IC-Zr, and IC-Ti (P<.05). The marginal misfit (in ${\mu}m$) of the groups were in the range of 2.7-4.0 (IC-Zr), 1.8-5.3 (IC-Ti), 6.5-17.1 (IT-Zr), 5.4-12.0 (IT-Ti), 16.8-22.7 (EH-Zr), and 10.3-15.4 (EH-Ti). CONCLUSION. The sealing capability and marginal fit of abutments were affected by the type of abutment material and connection design.

I/O 트랜지스터의 핫 캐리어 주입 개선에 관한 연구 (A study on the Hot Carrier Injection Improvement of I/O Transistor)

  • 문성열;강성준;정양희
    • 한국전자통신학회논문지
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    • 제9권8호
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    • pp.847-852
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    • 2014
  • 반도체 소자 제조에서 비용 절감을 위한 공정기술의 스케일링 가속화 경향에 따라 축소기술에 대한 요구가 증가되고 있다. 축소에 따른 또 다른 가장 큰 문제점의 하나는 Hot Carrier Injection (HCI) 특성의 열화이다. 이는 축소 과정에서 생기는 불가피한 가장 큰 이슈중의 하나이며, 특히 입출력 소자에 있어 극복하기 어려운 부분이다. 이의 개선을 위해 유효 채널 길이를 늘이고자 LDD 임플란트 공정 이전에 산화막이 추가되었고, 또한 I/O LDD 임플란트 공정의 이온 입사 각도를 최적화함으로써, LDD 영역에서 E-field 열화 없이 HCI 규격을 만족할 수 있었다.

공정 및 설계 변수가 고전압 LDMOSFET의 전기적 특성에 미치는 영향 (Impacts of Process and Design Parameters on the Electrical Characteristics of High-Voltage DMOSFETs)

  • 박훈수;이영기
    • 한국전기전자재료학회논문지
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    • 제17권9호
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    • pp.911-915
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    • 2004
  • In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.