• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.222.2-222.2
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• 2016

트랜지스터 응용 등에 관한 연구가 활발해 지면서 에너지 밴드갭이 0 eV에 가까운 그래핀 이외의 밴드 갭 조절이 가능한 MoS2 (molybdenum disulfide), BN (boron nitride), Bi2Te3 (bismuth telluride), WS2 (tungsten disulfide) 등과 같은 이차원 Transition Metal DiChalcogenides (TMDC) 물질이 반도체 물질로 각광받고 있다. 특히 MoS2의 경우 단결정 덩어리 상태에서는 약 1.3 eV의 밴드갭을 가지나 두께가 줄어들어 두 층일 경우에는 약 1.65 eV, 단일층이 되면 약 1.9 eV의 밴드갭을 가져 박막 층수에 따라 에너지 밴드갭 조절이 가능한 것으로 알려져있다. 하지만 두께 조절이 가능하면서 대면적, 고품질을 가지는 MoS2 박막 합성은 아직 제한적이라 할 수 있으며 새로운 방법 및 물질에 대한 연구가 지속적으로 이루어 지고 있다. 따라서 본 연구에서는 다양한 층수를 지니는 MoS2 합성을 위해 나노 두께의 MoS2 박막을 CF4 plasma 를 이용하여 layer etching 진행하고 CF4 plasma 100초 etching 진행한 2 layer 두께의 MoS2를 기준으로 H2S plasma를 이용하여 treatment 진행하였다. 물리적, 화학적 분석은 Raman spectroscopy, XPS(X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy) 등을 이용해 진행하였고 이를 통해 MoS2 layer 감소 및 damage recovery 등을 확인하였다.

• 전기화학회지
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• 제18권1호
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• pp.31-37
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• 2015

삼성분 칼코게나이드 화합물인 황화 주석 저마늄 ($Sn_xGe_{1-x}S$) 합금 나노입자를 메틸 주석 $(Sn(CH_3)_4$, tetramethyl tin, TMT) 메틸 저마늄 $(Ge(CH_3)_4$, tetramethyl germanium, TMG), 황화수소 ($H_2S$, hydrogen sulfide) 혼합 가스의 레이저 광분해 반응법으로 합성할 수 있으며, 이때 반응기 안의 가스 혼합비율에 따라 나노입자의 주석과 저마늄의 조성비를 조절할 수 있었다. 조성비를 가변시킨 나노입자는 모두 결정성을 갖게 만들 수 있었으며, 리튬 이온 전지의 음극소재로서 우수한 특성을 보여주었다. 조성비에 따라 특성을 조사결과, 황화저마늄은 70 사이클 후 최대 1200 mAh/g의 가장 높은 방전용량을 갖는 것과, 주석 성분 함량이 클수록 높은 충방전률에서 용량 유지가 더 잘 됨을 확인하였다. 이와 같은 우수한 효율의 황화물 합금 나노입자의 새로운 대량 합성법은 고성능 에너지 변환 소재 실용화에 기여할 것으로 예상된다.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Bulletin of the Korean Chemical Society
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• 제26권8호
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• pp.1260-1264
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• 2005

Three new quaternary tantalum thiophosphates, $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ have been synthesized by using reactive alkali metal halide fluxes and structurally characterized by single crystal X-ray diffraction techniques. The crystal structures of $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ contain 3-dimensional open framework anions, $[TaPS_6]^{x-}$(x = 0.09, 0.18, 0.28) with the empty channel which disordered alkali metal cations, $K^+\;and\;Rb^+$ are located in. Crystal data: $K_{0.18}TaPS_6$, tetragonal, space group$I4_1$/acd (no. 142), a=15.874(3) $\AA$, c=13.146(4) $\AA$, V=3312.7(12) ${\AA}^3$, K, Z=16, R1=0.0545. Crystal data: $K_{0.28}TaPS_6$, tetragonal, space group $I4_1$/acd (no. 142), a=15.880(2) $\AA$, c=13.134(3) $\AA$, V=3312.1(10) ${\AA}^3$, Z=16, R1=0.0562. Crystal data: $Rb_{0.09}TaPS_6$, tetragonal, space group I41/acd (no. 142), a=15.893(3) $\AA$, c=13.163(4) $\AA$, V=3324.7(15) ${\AA}^3$, Z=16, R1=0.0432.

• 한국분말재료학회지
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• 제30권5호
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• pp.387-393
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• 2023

Transition metal chalcogenides are promising cathode materials for next-generation battery systems, particularly sodium-ion batteries. Ni₃Co₆S₈-pitch-derived carbon composite microspheres with a yolk-shell structure (Ni₃Co₆S₈@C-YS) were synthesized through a three-step process: spray pyrolysis, pitch coating, and post-heat treatment process. Ni₃Co₆S₈@C-YS exhibited an impressive reversible capacity of 525.2 mA h g^-1 at a current density of 0.5 A g^-1 over 50 cycles when employed as an anode material for sodium-ion batteries. However, Ni₃Co₆S₈ yolk shell nanopowder (Ni₃Co₆S₈-YS) without pitch-derived carbon demonstrated a continuous decrease in capacity during charging and discharging. The superior sodium-ion storage properties of Ni₃Co₆S₈@C-YS were attributed to the pitch-derived carbon, which effectively adjusted the size and distribution of nanocrystals. The carbon-coated yolk-shell microspheres proposed here hold potential for various metal chalcogenide compounds and can be applied to various fields, including the energy storage field.

• 한국재료학회지
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• 제34권6호
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• pp.267-274
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• 2024

In this study, four different samples of Se₆₀Ge_40-xBi_x chalcogenides glasses were synthesized by heating the melt for 18 h in vacuum Pyrex ampoules (under a 10^-4 Torre vacuum), each with a different concentration (x = 0, 10, 15, and 20) of high purity starting materials. The results of direct current (DC) electrical conductivity measurements against a 1,000/T plot for all chalcogenide samples revealed two linear areas at medium and high temperatures, each with a different slope and with different activation energies (E₁ and E₂). In other words, these samples contain two electrical conduction mechanisms: a localized conduction at middle temperatures and extended conduction at high temperatures. The results showed the local and extended state parameters changed due to the effective partial substitution of germanium by bismuth. The density of extended states N(E_ext) and localized states N(E_loc) as a function of bismuth concentration was used to gauge this effect. While the density of the localized states decreased from 1.6 × 10¹⁴ to 4.2 × 10¹² (ev^-1 cm^-3) as the bismuth concentration increased from 0 to 15, the density of the extended states generally increased from 3.552 × 10²¹ to 5.86 × 10²¹ (ev^-1 cm^-3), indicating a reduction in the mullet's randomness. This makes these alloys more widely useful in electronic applications due to the decrease in the cost of manufacturing.