• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.439-442
• /
• 2001

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. CU/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The ratio of resistance vs. temperature has shown over a 2 k$\Omega$/degree. The slop of temperature and resistance shows linear.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.533-537
• /
• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.727-730
• /
• 2002

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.248-248
• /
• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.667-674
• /
• 2009

Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses: $Ge_{30}As_8Ga_2Se_{60}$, $Ge_{35}Ga_5Se_{60}$, and $Ge_{10}As_{20}S_{70}$. The absorption coefficients ${\alpha}({\nu})$, complex refractive index n(${\nu}$), and complex dielectric constants ${\varepsilon}({\nu})$ were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.574-577
• /
• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

• Journal of the Korean Ceramic Society
• /
• v.32 no.12
• /
• pp.1424-1432
• /
• 1995

Chalcogenide glasses having IR (8~12${\mu}{\textrm}{m}$) transmittance were prepared and their densities, thermal and mechanical properties, IR-transmittances and chemical durabilities were determined. Glass transition temperatures (Tg) of Ge-As-Se, Ge-As-Se-Te and Ge-SE-Te system glasses were in the range of 280~3$65^{\circ}C$, 210~236$^{\circ}C$ and 210~26$0^{\circ}C$, respectively. Crystallization temperature (Tc) of Ge-Se-Te system glass was in the range of 305~40$0^{\circ}C$. Their thermal expansion coefficients($\alpha$) were in the range of 11.7~15.2$\times$10-6/K, 15.4~16.0$\times$10-6/K and 17.4~27.8$\times$10-6/K, respectively. Their MOR, hardness and fracture toughness were in the range of 15.2~18.6MPa, 36.1~58.2Kg/$\textrm{mm}^2$, 1.0~1.3 MPa.mm1/2, 18.9~24.9 MPa, 40.9~65.1Kg/$\textrm{mm}^2$, 1.3~1.5 MPa.mm1/2, and 24.1~30.8 MPa, 40.9~86.0Kg/$\textrm{mm}^2$, 1.4~1.8 MPa.mm1/2, respectively. IR transmittance of Ge-Se-Te system glass was about 60%. Ge-O extrinsic absorption peaks at 8, 12 ${\mu}{\textrm}{m}$ were significantly eliminated by the addition of Mg. Chemical durabilities in deionizied water of Ge-Se-Te system glass were good and IR-transmittances decreased with leaching time and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.781-785
• /
• 2000

Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.06a
• /
• pp.675-676
• /
• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.791-795
• /
• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.