• 한국전기전자재료학회논문지
• /
• 제16권9호
• /
• pp.790-794
• /
• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.888-891
• /
• 2003

This paper describes on the fabrication and characteristics of micro ceramic thin-film type pressure sensors based on Ta-N strain-gauges for high-temperature applications. The Ta-N thin-film strain-gauges are deposited onto thermally oxidized Si diaphragms by RF sputtering in an argon-nitrogen atmosphere($N_2$ gas ratio: 8 %, annealing condition: $900^{\circ}C$, 1 hr.), Patterned on a wheatstone bridge configuration, and use as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is $1.097{\sim}1.21mV/V.kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS. The fabricated pressure sensor presents a lower TCR, non-linearity than existing Si piezoresistive pressure sensors. The fabricated micro ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that is operable under high-temperature environments.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.456-459
• /
• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.181-184
• /
• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.731-734
• /
• 2002

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097{\sim}1.21mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
• /
• pp.59-63
• /
• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.

• 센서학회지
• /
• 제23권6호
• /
• pp.420-424
• /
• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• 센서학회지
• /
• 제12권5호
• /
• pp.199-204
• /
• 2003

본 논문에서는 Ta-N 스트레인게이지를 이용한 극한 환경용 세라믹 박막형 압력센서의 제작 및 특성에 관하여 연구하였다. 압력감지부로 Ta-N 스트레인게이지를 사용하였으며, SDB(Si-wafer Direct Bonding)와 전기화학적 식각정지법을 이용하여 매몰 cavity를 가지는 저가격 고수율의 Si 박막 다이어프램을 제작하였다. 또한, 실리콘 박막 다이어프램상에 박막형 스트레인게이지를 형성하여 세라믹 박막형 압력센서를 제작하였다. 제작된 세라믹 박막형 압력 센서는 기존의 스트레인 게이지를 이용한 로드셀에 비해서 온도특성이 우수하고 재현성, 소형화, 집적화 및 저가격화가 가능하기 때문에 고온, 고압 등의 각한 환경에서도 사용이 가능할 것으로 기대된다.

• 센서학회지
• /
• 제23권2호
• /
• pp.94-98
• /
• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 센서학회지
• /
• 제15권3호
• /
• pp.216-221
• /
• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.