• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.871-876
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• 2014

Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.263-269
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• 2017

A piezoelectric cantilever energy harvester (PCEH) driven in longitudinal (3-3) vibration mode was fabricated, and its electrical properties were evaluated by varying the resistive load. A commercial PZT piezoelectric ceramic with a high piezoelectric charge constant ($d_{33}$) of 520 pC/N and the interdigitated (IDT) electrode pattern was used to fabricate the PCEH driven in longitudinal vibration. The IDT Ag electrode embedded piezoelectric laminates were co-fired at $850^{\circ}C$ for 2 h. The 3-3 mode PCEH was successfully fabricated by attaching the piezoelectric laminates to a SUS304 elastic substrate. The PCEH exhibited a high output power of 3.8 mW across the resistive load of $100k{\Omega}$ at 100 Hz and 1.5 G. This corresponds to a power density of $10.3mW/cm^3$ and a normalized global power factor of $4.56mW/g^2{\cdot}cm^3$. Given the other PCEH driven in transverse (3-1) vibration mode, the 3-3 mode PCEH could be better for vibration energy harvesting applications.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.30-34
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• 2009

A Sand blasting technology has been used to address via and trench processing of glass wafer of optic semiconductor packaging. Manufactured sand blast that is controlled by blast nozzle and servomotor so that 8" wafer processing may be available. 10mm sq test device manufactured by Dry Film Resist (DFR) pattern process on 8" glass wafer of $500{\mu}m's$ thickness. Based on particle pressure and the wafer transfer speed, etch rate, mask erosion, and vertical trench slope have been analyzed. Perfect 500 um tooling has been performed at 0.3 MPa pressure and 100 rpm wafer speed. It is particle pressure that influence in processing depth and the transfer speed did not influence.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.927-933
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• 1994

Alumina composite membranes were prepared by chemical vapor deposition (CVD) using aluminum-tri-isopropoxide as a precursor. Porous alumina supports were used in deposition, which were in disk shape with mean pore diameter of 0.1 ${\mu}{\textrm}{m}$ and prepared by slip-coasting process. film deposition morphology on porous support was simulated through depositing alumina film on polycrystalline silicon pattern, and its step coverage observed by SEM showed one deviated from uniform step coverage. N2 permeability through composite membranes and the pressure dependence decreased as the deposition time increased. Initially, the N2 permeability of the top layer was tend to decrease rapidly, and then the degree of decrease in N2 permeability was tend to diminish with deposition time. The N2 permeability increased with heat treatment temperature and the crack was generated in top layer at 100$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.22 no.1
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• pp.40-46
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• 1985

The effect of calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ on sintering characteristics of morphotropic $Pb(Zr_{0.53}Ti_{0.47})O_3 doped with $Nb_2O_5$ has been investigated. The ratio of sintered grain size to calcined grain size decreased as the calcining temperature increased. The hardness as well as the sintered density of the samples reached a maximum at about 90$0^{\circ}C$. The X-ray diffraction pattern of the sintered sample showed both tetragonal and rhombohedral phases. The tetragonal phases intensity increased with the calcining temperature going through a maximum at about 90$0^{\circ}C$ while the rhombohedral phase intensity remained uneffected. The both intensity were about the same at 90$0^{\circ}C$ The dielectric constant of the sintered samples reached a maximum um while the dielectric dissipation factor showed a minimum at the calcining temperature of about 100$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.851-854
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• 1992

It was grown ZrO2:10 mol% Y2O3 single crystals doped with 1 wt% of rare earth metal ion (Ce, Pr, Nd, Er, Eu) by Skull Method. Grown crystals showed Ce:orange-red, Pr:golden-yellow, Nd:lilac, Er:pink, Eu:light pink due to dopant effect. It was examined color centers in light absorption pattern of visible region (λ= 300~700 nm); in as grown samples, absorption by Ce4+, (Pr4+, Pr3+), Nd3+, Er3+, Eu3+ ions were important, and in samples after vacuum annealing, decrease of absorption by Pr4+ ion and increase of absorption by Pr3+ ion was important, and absorption by Ce3+, Eu2+ was important due to reduction of activator.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.845-851
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• 1993

Low firing temperature substrate were synthesized through tape casting and sintering of glass with cordierite composition and then their properties were investigated. Even though the dielectric properties and XRD patterns of substrates, obtained by tape casting and sintering at 900~100$0^{\circ}C$ for various periods, were similar to those of substrates obtained by dry pressing, the sinterability was enhanced. The substrates were thin and the size was 0.6$\times$50$\times$50mm. From the results of dielectric properties, the sinterability and X-ray diffraction pattern, the proper condition for cofiring process with conductor, Cu, was 90$0^{\circ}C$ for 1h. The properties of the substrate are as follows; the dielectric constant was 5.31(at 1MHz), the dissipation factor was 0.0028, the apparent porosity was 0.28% and the main crystalline phase was $\alpha$-cordierite.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1075-1079
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• 1999

LaSrCoO3 thin films were spin-coated onto the SrTiO3(100) substrates by the chemical solution process. X-ray diffraction $\theta$-2$\theta$ scans and X-ray diffraction $\beta$ scans were used to determine the crystallinity and in -plane alignment behavior of the films. The X-ray diffraction pattern showed the film obtained by annealing at 80$0^{\circ}C$ was highly oriented. The X-ray diffraction pole-figure analysis and reciprocal-space mapping (2$\theta$-$\Delta$$\omega$ scans) of the resulting film showed that the film comprising the pseduocubic phase had an epitaxial relationship with the SriO3 substrate.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.1-6
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• 1990

Preparation and heavy metal ion adsorption of sumicron hydroxy apatite were studied in this experiment. Submicron HAP was synthesized with Ca(OH)2 solution and H3PO4.Ca(OH)2 solution was made from water-quenching of CaCO3 heated at 1, 00$0^{\circ}C$ and 20%-H3PO4 was dropped into this Ca(OH)2 solution heated at 8$0^{\circ}C$. XRD pattern of prepared powder showed HAP crystal. The average particle size and sahpe of HAP were 0.25${\mu}{\textrm}{m}$ and sphere type. As a adsorbent, 1.0g of the prepared HAP powder in 1 liter of artifical 5ppm heavy matal waste water was sufficient, and more effective at pH7-9.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.869-876
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• 1990

Hexagonal boron nitride was synthesized from boron oxide and sodium amide in ammonia gas stream. The reaction mechanisms and characteristics of as synthesized boron nitride was investigated by means of TG, DTA, IR, XRD, SEM and PSA. The results are ; 1) hexagonal boron nitride was synthesized from reactions at temperatures above 40$0^{\circ}C$ 2) Sodium metaborate was present as by-product after reaction so that the reaction mechanism is reduced as follows : 2B2O3＋3NaNH2longrightarrowBN＋3NaBO2＋2NH3. 3) boron nitride obtained at the reaction temperature below 40$0^{\circ}C$ is found to have random layer strudcture but the structure transits to ordered layer structure rapidly with increasing reaction temperature, showing separation of (101) differaction line from (10)band in XRD pattern of the reaction product at 50$0^{\circ}C$.