• Journal of the Korean Ceramic Society
• /
• v.38 no.9
• /
• pp.782-786
• /
• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.4
• /
• pp.250-258
• /
• 2023

Ceramic oxide layer was formed on the surface of high silicon aluminum alloy by using PEO (plasma electrolytic oxidation) process. The microstructure of the oxide layer was analyzed using scanning electron microscopy (SEM) and x-ray diffraction patterns (XRD). The high silicon aluminum alloy prior to PEO process consists of Al, Si and Al₂Cu phases in XRD analysis, whereas Al₂Cu phase selectively disappeared after PEO treatment. Considerable decrease of relative intensity in most of peaks in XRD results of the high silicon aluminum alloy treated by PEO process was observed. It may be attributed to the formation of amorphous phases after PEO treatment. The corrosion behavior of the high silicon aluminum alloy treated by PEO process was investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that the high silicon aluminum alloy treated by PEO process shows greater corrosion resistance than that untreated by PEO process.

• Journal of the Korean Ceramic Society
• /
• v.31 no.10
• /
• pp.1197-1201
• /
• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.

• Korean Journal of Materials Research
• /
• v.24 no.7
• /
• pp.363-369
• /
• 2014

This is the study on diffusion of ceramic body oxide compounds to glaze. For ceramic bodies, no ferrous oxides contain white ware, celadon, and 3 wt% iron oxides contained white ware was used in this experiment. These ceramic bodies were glazed by transparency glaze, iron oxides contained glaze, and glaze made by pine tree ash that treated in 1240 degree, under reduction condition for an hour. An electron probe microanalyzer(EPMA) was used to study diffusion of oxides and to calculate distance of ceramics bodies. As a result, only iron oxide and magnesium oxide from the body diffused to glaze, and also made a band which shown very thin layer of iron oxide and magnesium oxide between the body and glaze. The densest band of iron oxide formed 100 to $150{\mu}m$ in the glaze, and the densest band of magnesium oxide was found 50 to $100{\mu}m$ in the glaze. Therefore, it could be concluded that iron oxide in the body is diffused to the glaze and it affects the color of glaze, even though iron oxide exists in the glaze. Furthermore, the thickness of the glaze has an effect on the color of celadon.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.31.2-31.2
• /
• 2009

본 연구에서는 Graphene oxide를 $800^{\circ}C$, 질소분위기 하에서 환원시켜 얻은 $GP_{TR}$과 Hydrazine을 이용한 화학적 처리로 얻은 $GP_{CR}$의 분자구조를 제안하였다. 이때 grapheneoxide는 modified Hummers' method를이용하여 제조하였다. $GP_{TR}$과 $GP_{CR}$은 모두 표면에 몇몇의 oxide group이 존재하는데$GP_{TR}$은 six layer로 $C_{100}O_{3{\pm}1}$ 의 조성을 갖고 $GP_{CR}$은 three layer로 and $C_{100}O_{6.5{\pm}2}$의 조성을 갖는다. 그리고 면간간격은 $GP_{TR}$은 $3.432\;{\AA}$, $GP_{CR}$은 $3.760\;{\AA}$으로 전형적인 방법인 top downprocess로 얻은 graphene 보다 다소 크다는 것을 알 수 있다.

• Journal of the Korean Society for Heat Treatment
• /
• v.35 no.2
• /
• pp.51-56
• /
• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.312-312
• /
• 2003

• Journal of the Korean Ceramic Society
• /
• v.47 no.5
• /
• pp.461-466
• /
• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Journal of the Korean Ceramic Society
• /
• v.43 no.7 s.290
• /
• pp.415-420
• /
• 2006

The residual stresses in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloy samples using a Finite Element Method (FEM). It was found that the stress distribution of the interface boundary was dependent upon mainly the geometrical shape or its aspect ratio and the thickness of TGO layer, which was formed by growth and swelling behavior of oxide layer. Maximum compressive residual stress in the TBC/TGO interface is higher than that of the TGO/bond coat interface, and the tensile stress had nothing to do with change of an aspect ratio. The compressive residual stresses in the TBC/TGO and TGO/bond coat interface region increased gradually with the TGO growth.

• Journal of the Korean Ceramic Society
• /
• v.52 no.1
• /
• pp.72-76
• /
• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.