• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

• Current Photovoltaic Research
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• 제2권3호
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• pp.95-102
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• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

• 한국재료학회지
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• 제32권5호
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• pp.243-248
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• 2022

This study demonstrates a different approach method to fabricate antimony selenide (Sb₂Se₃) thin-films for the solar cell applications. As-deposited Sb₂Se₃ thin-films are fabricated via electrodeposition route and, subsequently, annealed in the temperature range of 230 ~ 310℃. Cyclic voltammetry is performed to investigate the electrochemical behavior of the Sb and Se ions. The deposition potential of the Sb₂Se₃ thin films is determined to be -0.6 V vs. Ag/AgCl (in 1 M KCl), where the stoichiometric composition of Sb₂Se₃ appeared. It is found that the crystal orientations of Sb₂Se₃ thin-films are largely dependent on the annealing temperature. At an annealing temperature of 250 ℃, the Sb₂Se₃ thin-film grew most along the c-axis [(211) and/or (221)] direction, which resulted in the smooth movement of carriers, thereby increasing the carrier collection probability. Therefore, the solar cell using Sb₂Se₃ thin-film annealed at 250 ℃ exhibited significant enhancement in J_SC of 10.03 mA/cm² and a highest conversion efficiency of 0.821 % because of the preferred orientation of the Sb₂Se₃ thin film.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.203-207
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• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• 한국진공학회지
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• 제7권3호
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• pp.214-220
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• 1998

낮은 평형압력을 가진 TDEAT 증착원을 이용하여 TiN증착을 실시한 실험에서 TiN 증착률에 영향을 주는 인지들에 대하여 연구를 실시하였다. TiN성장률은 bubbler 온도, 증 착온도, 운반기체관의 conductance, 운반기체 종류에 따라 큰 영향을 받고 있었다. 또한 bubbler로 유입되는 운반기체관의 가열에 의하여도 증착률 증가가 적은 범위에서 이루어지 고 있음이 관찰되었다. 이와함께 chamber내로 유입되는 운반관을 $90^{\circ}C$로부터 $120^{\circ}C$로 가열 한 실험에 의하면 운반관 가열이 TiN 성장 증가를 일으키고 있으며, 온도에 대한 TiN 성장 은 약0.2eV의 활성화에너지를 가진 Arrehenius형태로 증가되고 있었다.

• 대한전자공학회논문지SD
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• 제43권3호
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• pp.9-14
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• 2006

본 논문에서는 NBTI 특성 개선을 위한 새로운 BEOL 공정을 제안하였다. 우선 BEOL의 마지막 공정인 수소 금속소결 열처리 공정, 보호막 공정 등이 NBTI에 많은 영향을 끼침을 분석하였다 이를 바탕으로 수소 금속소결 대신 질소 금속소결 공정을 적용하고 보호막 층, 특히 PE-SiN 증착 전에 질소 금속소결공정을 실시하여 NBTI 수명시간을 개선하였다. 제안한 방법을 적용하여도 소자 특성이나 NMOS의 HC 특성이 열화 되지 않음을 분석하여 실제 소자에 적용될 수 있음을 증명하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.298-305
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• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• 한국전자통신학회논문지
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• 제11권5호
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• pp.473-478
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• 2016

본 논문은 RTP법으로 산화막을 질화시킨 질화산화막으로 MIS 커패시터를 제작하여 avalanche 주입에 따른 캐리어 트랩 특성을 조사하였다. avalanche 주입에 의한 flatband 전압 변화는 두 번의 turn-around가 관찰되었는데 이는 처음 산화막에서 전자 트래핑이 있어나고, 전하 주입에 따라 홀 트래핑에 의한 turn-around 후 다시 전자 트래핑이 일어나는 것을 관찰하였다. 질화 산화막의 캐리어 트랩 파라미터를 결정하기 위하여 실험 결과를 기초로 종류가 다른 여러 트랩을 갖는 계에 대한 캐리어 트래핑을 비교한 결과 실험값과 일치함을 확인하였다.