• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• Journal of Korean Society for Atmospheric Environment
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• v.34 no.4
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• pp.554-566
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• 2018

The rice husk contains nutrients which can be easily utilized by microorganisms, and also has a water retaining ability, which played a crucial part in enabling it to become a biofilter media. In this study, we evaluated the applicability of rice husk pellet bio-scrubber as a microbiological carrier. The pelletization experiment of rice husk as a biological media was performed using PVA and EVA binder. Also, the feasibility tests of rice husk as a biological media for odor removal were carried out in order to know whether rice-husk contains useful components as a media for microbiological growth or not. Lastly, a combined test for odor gas absorption and biological oxidation was conducted using a lab scale bio-filter set-up packed with rice-husk pellets as wet-scrubber. The major components of the rice husk were carbon, hydrogen, nitrogen, and oxygen, while carbon acted as the main ingredient which comprised up to 23.00%. The C : N : P ratio was calculated as 45 : 1 : 2. Oxygen uptake rate, yield and decay rate of the rice husk eluent was calculated to be $0.0049mgO_2/L/sec$, 0.24 mgSS/mgCOD and 0.004 respectively. The most stable form of rice husk pellets was produced when the weight of the rice husk, EVAc, PVAc, and distilled water was 10 : 2 : 0.2 : 10. The prepared rice husk pellets had an apparent density of 368 g/L and a porosity of 59.00% upon filling. Dry rice husks showed high adsorption capacity for ammonia gas but low adsorption capacity for hydrogen sulfide. The bio-filter odor removal column filled with rice husk pellets showed more than 99.50% removal efficiency for NH3 and H2S gas. Through the analysis of circulation water, the prime removal mechanism is assumed to be the dissolution by water, microbial nitrification, and sulfation. Finally, it was confirmed that the microorganisms could survive well on the rice husk pellets, which provided them a stable supply of nutrients for their activity in this long-term experiment. This adequate supply of nutrients from the rice husk enabled high removal efficiency by the microorganisms.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.2
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• pp.138-144
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• 2005

This study was carried out to investigate the changes of nitrifying bacterial populations including Nitrosomonas sp. and Nitrobacter sp. in $A^2/O$ pilot plant with the configuration of anaerobic-anoxic-oxic reactors. The suspended nitrifying bacterial populations in mixed liquor and those of attached populations on granular carrier surface made by molded waste tire were analyzed by Fluorescent in situ Hybridization(FISH) method. The nitrification rate of a pilot plant showed the value of $1.97{\sim}2.98\;mg\;N/g$ MLVSS hr. The ratios of suspended ammonia oxidizer including Nitrosomonas sp. (NSO) to total bacteria in each reactor were oxic < anoxic < anaerobic. On the contrary, the ratios of suspended nitrite oxidizer including Nitrobacter sp. (NIT) were anaerobic < anoxic < oxic. The thickness, dry density and mass of the attached biomass on granular carriers were $180{\sim}188\;{\mu}m$, $38.5{\sim}43.9\;mg/cm^3$, $29.4{\sim}32.5\;mg/g$, respectively. Also, the ratios of attached nitrifier to total bacteria on granular carriers were similar regardless of ammonia/nitrite-oxidizer (NSO; 3.2%, NIT; 2.8%) and very low compared to those(NSO; $22.8{\sim}28.4%$, NIT; $17{\sim}26%$) of suspended nitrifier.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.1
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• pp.24-30
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• 2008

In this paper we analyze the performance of an adaptive sector cell system, which is adopted to maintain the traffic balance between sectors and to utilize the cell resources effectively, using the data collected from real channel environments. In the data measurements, we transmitted the QPSK modulated signal with carrier frequency of 1.95GHz and received the signals using the 8x4 array antenna equipped on the top of buildings in the urban area. We analyzed the angular distribution and the delay spread of a user signal and analyzed angular distribution of mobile users in a cell using the collected data. Also, we propose the vector channel modeling using the estimated pdf(probability distribution function) of the analyzing results. Through the proposed channel modeling the improvement of the call blocking rate was analyzed when using the adaptive sector cell system, and computer simulations show that the call blocking rate of the adaptive sector cell system was much lower than that of the fixed sector cell system. Additionally, it shows that the call blocking rate increases severely in the fixed sector cell system while the difference of the call blocking rate was smaller in the adaptive sector cell system, as the user density of the spatial distribution increases.

• Journal of IKEEE
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• v.24 no.1
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• pp.161-169
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• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.125-130
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• 1993

We has made 2-zone vertical electric furnace and has been grown CdS single crystal by sublimation method in crystal growth tube with tail tube without seed crystal for growth. While it has been growing, temperature difference ${\Delta}T$ of source and growth part has nearly agreed with theoritical value $14.7^{\circ}C$and experimental value $15^{\circ}C$ Then, crystal of best quality has been grown, when temperature of tail tube has been $110^{\circ}C$, in spite of quickly pulling up crystal growth tube a degree O.38mm per hour. The grown crystal have had hexagonal structure and single crystal with c-axis to length of crystal growth tube from X- ray diffraction pattern of powder method and Laue pattern of back reflection Laue method. Also, the mobility and carrier density from Hall effect measurement have been $316cm^2/V{\cdot}sec$ and $2.90{\times}10^{16}cm^{-3}$ at the room temperature, respectively.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.3 s.47
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• pp.295-305
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• 2004

Colloid and surface chemistry have been focused on surface area and surface energy. Local surface properties such as surface density, interaction, molecular orientation and reactivity have been one of interesting subjects. Systems of such surface energy being important would be listed as association colloid, emulsion, particle dispersion, foam, and 2-D surface and film. Such nanoparticle systems would be applied to drug delivery systems and functional cosmetics with biocompatible and degradable materials, while nanoparticles having its size of several nm to micron, and wide surface area, have been accepted as a possible drug carrier because their preparation, characteristics and drug loading have been inves-tigated. The biocompatible carriers were also used for the solubilization of insoluble drugs, the enhancement of skin absorption, the block out of UV radiation, the chemical stabilization and controlled release. Nano/micro emulstion system is classified into nano/microsphere, nano/microcapsule, nano/microemulsion, polymeric micelle, liposome according to its prep-aration method and size. Specially, the preparation method and industrial applications have been introduced for polymeric micelles self-assembled in aqueous solution, nano/microapsules controlling the concentration and activity of high concen-tration and activity materials, and monolayer or multilayer liposomes carrying bioactive ingredients.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.