• Carbon letters
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• v.9 no.1
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• pp.17-22
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• 2008

A carbon nanotube (CNT) of diameter ~20 nm has been synthesized by spray pyrolysis of turpentine oil using Ni/Fe catalyst. Pellet of CNTs has been used as a target to produce semiconducting carbon thin film of band gap 1.4 eV. Presence of oxygen pressure in the pulse laser deposition (PLD) chamber helped to control the $sp^3/sp^2$ ratio to achieve the desired band gap. Results are discussed with the help of Raman spectra, SEM TEM micrographs and optical measurements suggest that semiconducting carbon thin film deposited by PLD technique has retained its nanotubes structure except that its diameter has increased from 20 nm to 150 nm.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1473-1476
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• 2013

Solution-based deposition of $CuIn_xGa_{1-x}Se_2$ (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.227-232
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• 1994

Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.88-92
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• 2015

In order to study the semi-conductive characteristics of carbon black-filled ethylene-propylene-diene monomer (EPDM) composite film, which is used for measuring occlusal force, composite samples with volume ratios of carbon black to EPDM ranging from 30% to 70% were prepared. The process of making a composite film consists of two steps, which involve the preparation of a slurry composition and the fabrication of a thin film using solution casting and a lamination process. To prepare the slurry composition, we dispersed carbon black nanoparticles into an organic solvent before mixing with an EPDM solution in toluene. The mechanical and electrical properties of the resulting carbon black-filled EPDM film were then investigated, and the results showed that the electrical resistance of a film decreases with the increase in the carbon black content. Furthermore, improved elastic recovery was observed after cross-linking the EPDM.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.4
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• pp.143-150
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• 2003

Frictional properties of ultra-thin carbon coatings on silicon wafer were investigated based on Taguchi experimental design method. Sensitivity analysis was performed with normal load, relative humidity, deposition process, and coating thickness as the variables. It was found that despite low thickness, the carbon coating resulted in relatively low friction coefficient. Also, the frictional behavior was affected significantly by humidity and normal load.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.72.1-72.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.177-177
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.526-529
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• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a diamond like carbon (DLC) thin film surface. A good LC alignment by UV exposure on the DLC thin film surface at $200\AA$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the DLC thin film surface was observed at annealing temperature of $180^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of $200^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method on the DLC thin film surface can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.760-763
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• 2004

We studied the nematic liquid crystaL(NLC) aligning capabilities using the new alignment material of a nitrogenated diamond-like carbon(NDLC) thin film. The NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about 9.9$^{\circ}$ by ion beam(IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin films surface at annealing temperature of 200 $^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of 250 $^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.