• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Proceedings of the Membrane Society of Korea Conference
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• 1996.06a
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• pp.121-147
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• 1996

Since 1980, the water quality of ultra-pure water has been rapidly improved, and presently ultra-pore water producing equipment for 64Mbit is in operation. Table 1 shows the degree of integration of DRM and required water quality exlmple. The requirements of the ultra-pure water for 64Mbit are resistivity: 18.2 MQ/cm or higher, number of particulates: 1 pc/ml or less (0.05 $\mu$m or larger). bacteria count: 0.1 pc/l or less. TOC (Total Organic Carbon, index of organic snbstance) : 1ppb or less, dissolved oxygen: 5ppb or less, silica: 0.5ppb or less, heavy metal ions: 5ppb or less. The effect of metals on the silicon wafer has been well known, and recently it has been reported that the existence of organic substance in ultra-pure water is closely related to the device defect, drawing attention. It is reported that if organic substance sticks to the natural oxidation film, the oxide film remaims on the organic substance attachment in the hydrofluoric acid treatment (removal of natural oxidation film). The organic substance forms film on the silicon wafer, and harmful elements such as metals and N.P.S., components contained in the organic substance and the bad effect due to the generatinn of silicon carbide cannot be forgotten. In order to remove various impurities in raw water, many technological develoments (membrane, ion exchange, TOC removal, piping material, microanalysis, etc.) have been made with ultra-pure water producing equipment and put to practical use. In this paper, technologies put to practical use in recent ultra-pure vater producing equimeut are introduced.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.177-184
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• 2001

C3M(chemical mechanical micro machining) is applied for diminishing the size of burr and fabricating the massless patterning for aluminium wafer(thickness of 1${\mu}m$). It is difficult to perform the micro size machining with the radically increased shear stress. While the miniaturization and function-orientation of parts has been needed in the many field such as electronics, optics and medicine. etc., it is not enough to satisfy the industry needs in the machining technology. In this paper feasibility test of diminishing burr and fabricating maskless pattern was experimented and analyzed. In the experiment oxide layer was farmed on the aluminium with chemical reaction by ${HNO_3}$(10wt%), then the surface was grooved with tungsten carbide tool for the different condition such as the load and fred rate. The result was compared with the conventional machining to show the improvement of C3M with SEM for burr diminish and XPS for atomic existence, AFM for more precise image.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.362-365
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• 2005

Currently Chemical Mechanical Planarization (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. Especially the CMP pad conditioner, one of the diamond tools, is required to have strong diamond retention. Strong cohesion between diamond grits and metal matrix prevents macro scratch on the wafer. If diamond retention is weak, the diamond will be pulled out of metal matrix. The pulled diamond grits are causative of macro scratch on wafer during CMP process. Firstly, some results will be reported of cohesion between diamond grits and metal matrix on the diamond tools prepared by three different manufacturing methods. A measuring instrument with sharp cemented carbide connected with a push-pull gauge was manufactured to measure the cohesion between diamond grits and metal matrix. The retention force of brazed diamond tool was stronger than the others. The retention force was also increased in proportion to the contact area of diamond grits and metal matrix. The brazed diamond tool has a strong chemical combination of the interlayer composed of chrome in metal matrix and carbon which enhance the interfacial cohesion strength between diamond grits and metal matrix. Secondly, we measured real-time data of the coefficient of friction and the pad wear rate by using CMP tester (CETR, CP-4). CMP pad conditioner samples were manufactured by brazed, electro-plated and sintered methods. The coefficient of friction and the pad wear rate were shown differently according to the arranged diamond patterns. Consequently, the coefficient of friction is increased according as the space between diamonds is increased or the concentration of diamonds is decreased. The pad wear rate is increased according as the degree of diamond protrusion is increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.225-229
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• 2011

Most of the silicon cutting methods using the multi-wire with the slurry injection have been used for wafers of the crystalline solar cell. But the productivity of slurry injection cutting type falls due to low cutting speeds. Also, the direct contact with the metal wire and silicon block increases the concentration of metallic impurities in the wafer's surface. In addition, the abrasive silicon carbide (SiC) generates pollutants. And production costs are rising because it does not re-use the worn wire. On the other hand, the productivity of the cutting method using the diamond coated wire is about 2 times faster than the slurry injection cutting type. Also, the continuous cutting using the used wire of low wear is possible. And this is a big advantage for reduced production costs. Therefore, the cutting method of the diamond coated wire is more efficient than the slurry injection cutting technique. In this study, each cutting type is analyzed using the surface characteristics of the solar wafer and will describe the effects of the manufacturing process of the solar cell. Finally, we will suggest improvement methods of the solar cell process for using the diamond cutting type wafer.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1998.03a
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• pp.196-202
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• 1998

Recently, developments in the frontier industry have brought a rapid increase in the use of brittle materials such as silicon wafer, ferrite, sintered carbide, MgO single crystal and die steel. Because of high hardness and brittleness the cracking and chipping are apt to generate in the grinding of brittle materials, but have replaced gradually the high precision grinding. In this study, the optimum system of in-process electrolytic dressing controlled by computer was developed for improving the defects, and could maintain the optimum dressing condition at all times. The control of in-process dressing was simplified using this system, was able to maintain a stable dressing current and was unrelated to the change of dressing condition according to the variation of gap and oxide layer. Therefore, the optimum in-process electrolytic dressing system was constructed and the analysis of grinding mechanism with this system was studied.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.