• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.72-73
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• 2003

• Journal of Korean Society of Environmental Engineers
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• v.28 no.4
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• pp.438-446
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• 2006

A lab-scale batch test was conducted to develop capping materials to reduce the sediment phosphorus in the stagnant water zone of Gyeongancheon in Paldang Lake. The mean grain size(Mz) of sediment in the investigated area was 7.7 ${\phi}$, which is very fine, and the contents of organic carbon($C_{org}$) was 2.4%, which is very high. For the phosphorous release experiment to select the optimal capping material, sand layer, powder-gypsum($CaSO_4{\cdot}2H_2O$), granule-gypsum, complex layer(gypsum+sand) and the control were compared and evaluated in the 150 L reactor for 45 days. In case of the capping with the sand, it was found that the phosphorous from the sediment could be reduced by around 50%. However, it was found that this caused the reduction of the dissolved oxygen in the water column(by less than 3 mg/L) due to the resuspension of sediment and the organic matter decomposition that comes from the generation of $CH_4$ gas in the 1 cm of the sand layer. Therefore, it is likely that the sand layer has to be thickener in case of the sand capping. Powder-gypsum and granule-Gypsum reduced phosphorous release by more than 80%. However, the concentration of ${SO_4}^{2-}$ in the water column increased, making it difficult to apply it to the drinking water protection zone. We developed Fe-Gypsum and $SiO_2$-gypsum materials to reduce the solubility of ${SO_4}^{2-}$. Powder-Gypsum creates the interception film that does not have any aperture on the sediment layer when it is combined with the water. However phosphorous release caused by the generation of $CH_4$ gas may happen at a time when the gypsum layer has the crack. Capping through the complex layer(granule-Gypsum+sand(1 cm)) found to be suitable for the drinking water protection zone because it was effective to prevent phosphorus release. Moreover, this leads to the lower solubility from the concentration of ${SO_4}^{2-}$ into the water column than the powder-Gypsum and granule-Gypsum. The addition of gypsum($CaSO_4{\cdot}2H_2O$) into the sediment can reduce the progress of methanogensis because fast early diagenesis and sufficient supply of ${SO_4}^{2-}$ to the sediment, stimulate the SRB(sulfate reducing bacteria) highly.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.61-61
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• 2000

Device의 고성능화를 위하여 소자의 고속화, 고집적화가 가속됨에 따라 SALICIDE Process가 더욱 절실하게 요구되고 있다. 이러한 SALICIDE Process의 재료로써는 metal/silicide 중에서 비저항이 가장 낮은 TiSi2(15-25$\mu$$\Omega$cm), CoSi2(17-25$\mu$$\Omega$cm)가 일반적으로 많이 연구되어 왔다. 그러나 Ti-silicide의 경우 Co-silicide는 배선 선폭의 감소에 따른 면저항 값의 변화가 작으며, 고온에서 안정하고, 도펀트 물질과 열역학적으로 안정하여 화합물을 형성하지 않는다는 장점이 있으마 Ti처럼 자연산화막을 제거할 수 없어 Si 기판위에 자연산화막이 존재시 균일한 실리사이드 박막을 형성할 수 없는 단점등을 가지고 있다. 본 연구에서는 Ti Capping layer 에 의한 균일한 Co-silicide의 형성을 일반적인 Si(100)기판과 SCl 방법에 의하여 chemical Oxide를 성장시킨 Si(100)기판의 경우에 대하여 연구하였다. 스퍼터링 방법에 의해 Co를 150 증착후 capping layer로써 TiN, Ti를 각각 100 씩 증착하였다. 열처리는 RTP를 이용하여 50$0^{\circ}C$~78$0^{\circ}C$까지 4$0^{\circ}C$ 구간으로 N2 분위기에서 30초 동안 열처리를 한후, selective metal strip XRD, TEM의 분석장비를 이용하여 관찰하였다. lst RTP후 selective metal strip 후 면저항의 측정과 XRD 분석결과 낮은 면저항을 갖는 CoSi2로의 상전이는 TiN capping과 Co 단일박막이 일반적인 Si(100)기판과 interfacial oxide가 존재하는 Si(100)기판위에서 Ti capping의 경우보다 낮은 온도에서 일어났다. 또한 CoSi에서 CoSi2으로 상전이는 일반적인 Si(100)기판위에서 보다 interfacial Oxide가 존재하는 Si(100)기판 위에 TiN capping과 Co 단일박막의 경우 열처리 후에도 Oxide가 존재하는 불균인한 CoSi2박막을 관찰하였으며, Ti capping의 경우 Oxise가 존재하지 않는 표면과 계면이 더 균일한 CoSi2 박막을 형성 할 수 있었다.

• ETRI Journal
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• v.45 no.6
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• pp.1056-1064
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• 2023

The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.245-248
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• 2002

In this paper, the influence of Si surface damage on the NiSi formation has been characterized. The silicon surface is damaged using ion beam type spotter. Then, the effect of H2 anneal and TiN capping layer on the damaged has also been analyzed. The sheet resistance of NiSi formed on damaged Si increased rapidly as the damaging time increases while thermal stability of damaged NiSi was stabler than the undamaged one. In the case when H\ulcorner anneal and TiN capping layer were applied together, the characteristics of NiSi shows a little improvement of the sheet resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.628-631
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• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.671-674
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• 2003

본 논문에서는 Cobalt interlayer 와 Titanium Nitride(TiN) capping layer를 Ni SALICIDE의 단점인 열 안정성과 sheet resistance 와 series 저항을 감소시키는데 적용하여 0.lum 급 CMOS 소자의 특성을 연구하였다. 첫째로, Ni/Si 의 interface 에 Co interlayer 를 증착하여 Nickel Silicide의 단점인 열 안정성 평가인 700℃, 30min의 furnace annealing 후에 낮은 sheet resistance와 누설전류를 줄일 수 있었다. 두번째로, TiN caping layer를 적용하여 실리사이드 형성시 산소와의 반응을 막아 실리사이드의 표면특성을 향상시켜 누설전류의 특성을 개선하였다. 결과적으로 소자의 구동전류 향상, 누설전류 저하, 낮은 면저항으로 소자의 특성을 개선하였다.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.33-37
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• 2001

We measured x-ray magnetic circular dichroism of Co films on Pd(111) surface with and without Pd capping layer at the Co L$_2$,$_3$ edges. Perpendicular magnetization and orbital-moment enhancement are induced by the capping layer. The increase of perpendicular magnetic anisotropy induced by capping layer is considered to result from the increase of surface anisotropy due to the hybridization at the surface.