• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• Journal of Power Electronics
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• 제13권3호
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• pp.329-338
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• 2013

In this paper, the charging characteristics of series resonant type high voltage capacitor chargers considering the transformer stray capacitance have been studied. The principles of operation for the four operational modes and the mode changes for the four different switching frequency sections are explained and analyzed in the range of switching frequency below the resonant frequency. It is confirmed that the average charging currents derived from the above analysis results have non-linear characteristics in each of the four modes. The resonant current, resonant voltage, charging current, and charging time of this capacitor charger as variations of the switching frequency, series parallel capacitance ratio ($k=C_p/C_s$), and output voltage are calculated. From the calculation results, the advantages and disadvantages arising from the parallel connection of this stray capacitance are described. Some methods to minimize charging time of this capacitor charger are suggested. In addition, the results of a comparative test using two transformers whose stray capacitances are different are described. A 1.8 kJ/s prototype capacitor charger is assembled with a TI28335 DSP controller and a 40 kJ, 7 kV capacitor. The analysis results are verified by the experiment.

• 한국정보통신학회논문지
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• 제20권1호
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• pp.175-184
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• 2016

본 논문에서는 기존의 LCR 미터에 의한 측정방식이 아니라 C/V(capacitance to voltage) 변환 방식을 이용하여 커패시턴스를 측정하는 방법을 제안하였다. 그리고 다중채널용 초음파 프로브 진단장치를 구현하기 위해 192채널들을 6개의 MUX(multiplexer) 채널로 변환하는 아날로그 MUX 회로를 설계하였다. 각각의 MUX 채널 회로별 전압을 다시 커패시턴스로 변환하는 회로특성이 다르기 때문에 각각의 MUX 채널별 디지털전압을 커패시턴스로 변환하는 변환함수를 최소 자승법을 이용하여 유도하였다. 개발된 시제품의 성능시험결과로 1회 측정시간이 4초 이내로 측정되었고, 192개 채널들의 반복적인 측정에서 최대값, 최소값, 평균값에 대한 측정 오차값이 5% 이내의 시험결과가 제시되었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.661-663
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• 2004

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 C-V 특성을 조사하기 위하여 side gate 길이와 side gate 전압을 변화시켜 조사하였다. Main gate 전압은 -5V에서 +5V까지 변화시켰으며, main gate 길이가 50nm, side gate 길이가 70nm, side gate 전압이 3V, drain 전압이 2V일때 우수한 C-V 특성을 얻었다. 이 때 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• Journal of Information Display
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• 제9권2호
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• 한국진공학회지
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• 제3권1호
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• 대한전자공학회논문지SD
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• 제38권11호
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• pp.765-770
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• 2001

고온 급속 열처리시킨 LiNbO₃/AIN/Si(100) 구조를 이용하여 MFIS 소자를 제작하고, 비휘발성 메모리 동작 가능성을 확인하였다. 고유전율 AIN 박막 위에 Pt 전극을 증착시켜 제작한 MIS 구조에서 측정한 1MHz C-V 특성곡선에서는 히스테리시스가 전혀 없고 양호한 계면특성을 보였으며, 축적 영역으로부터 산출한 비유전율 값은 약 8 이었다. Pt/LiNbO₃/AIN/Si(100) 구조에서 측정한 1MHz C-V 특성의 축적영역에서 산출한 LiNbO₃ 박막의 비유전율 값은 약 23 이었으며, ±5 V의 바이어스 범위 내에서의 메모리 윈도우는 약 1.2 V이었다. 이 MFIS 구조에서의 게이트 누설전류밀도는 ±500 kV/cm의 전계 범위 내에서 10/sup -9/ A/㎠ 범위를 유지하였다. 500 kHz의 바이폴러 펄스를 인가하면서 측정한 피로특성은 10/sup 11/ cycle 까지 초기값을 거의 유지하는 우수한 특성을 보였다.

• 한국결정성장학회지
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• 제7권3호
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• pp.487-493
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• 1997

SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다.