• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• 대한전자공학회논문지SD
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• 제43권5호
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• pp.25-33
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• 2006

전달 행렬 방법과 capacitance-voltage 특성, 그리고 측정된 광응답 스펙트럼을 이용하여 Schottky 다이오드 UV-A와 B 광검출기에 사용되는 GaN, $Al_{0.2}Ga_{0.8}N$ 등의 반도체 및 Schottky 접촉 금속 Ni의 물질특성인 흡수계수(absorption coefficient)를 추출하였다. 입사된 빛이 반도체의 공핍영역에서 흡수되는 양을 구하고, 이로부터 각 파장에서의 광응답 특성을 얻는 과정을 컴퓨터 프로그램으로 구현하였다. 그리고, 계산 값을 측정치와 비교하여 각 파장에서 GaN, $Al_{0.2}Ga_{0.8}N$, Ni의 흡수계수를 얻을 수 있었다. 추출된 흡수계수를 이용하여 자외선 광검출기의 광응답을 높이는 설계 방안을 모색하였다. Ni의 흡수계수가 크기 때문에 광응답을 결정하는 주요 요소는 Ni 전극의 두께이다. 따라서 Schottky 접촉 금속 Ni의 두께를 줄이고, 공핍 영역의 크기를 늘릴 수 있다면 광응답 특성이 더욱 향상된 광검출기의 실현이 가능해질 것이다.

• 한국표면공학회지
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• 제57권4호
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• pp.338-347
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• 2024

𝛼-MnO₂ as a cathode material for Zn-ion batteries allows insertion and extraction of Zn ions within its tunnel structure during charge and discharge. The morphology and crystal structure of 𝛼-MnO₂ particles critically determine their electrochemical behavior and energy storage performance. In this study, 𝛼-MnO₂ was synthesized from precursor solutions under varying pH conditions using a hydrothermal method. The effects of pH values on the morphology, crystal structure, and electrochemical performance were systematically analyzed. The analysis revealed that materials synthesized at higher pH levels exhibited elongated and narrow nanorods with a lower specific surface area. In contrast, those formed at lower pH levels showed shorter, thicker nanorods with a higher specific surface area. This increased surface area at a lower pH enhanced the specific capacitance by providing a greater electrode/electrolyte interfacial area. By contrast, the material synthesized at higher pH conditions demonstrated superior rate capability, attributed to its crystal structure with wider lattice spacings. Wide lattice parameters in the material synthesized at higher pH conditions facilitated easier ion transport than at lower pH levels. Consequently, the study confirms that adjusting the pH of the precursor solution can optimize the electrochemical properties of 𝛼-MnO₂ for Zn-ion batteries.

• Journal of Computing Science and Engineering
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• 제8권3호
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• Journal of information and communication convergence engineering
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• 제13권3호
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• pp.172-179
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• 2015

Face-to-face (F2F) bonding in three-dimensional integrated circuits (3D ICs), compared with other bonding styles, is closer to commercialization because of its benefits in terms of density, yield, and cost. However, despite the benefits that F2F bonding expect to provide, it's physical nature has not been studied thoroughly. In this study, we, for the first time, extract cross-die (inter-die) parasitic elements from F2F bonds on the full-chip scale and compare them with the intra-die elements. This allows us to demonstrate the significant impact of field sharing across dies in F2F bonding on full-chip noise and critical path delay values. The baseline method used is the die-by-die method, where the parasitic elements of individual dies are extracted separately and the cross-die parasitic elements are ignored. Compared with this inaccurate method, which was the only method available until now, our first-of-its-kind holistic method corrects the delay error by 25.48% and the noise error by 175%.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• 전자공학회논문지A
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• 제32A권12호
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• pp.184-197
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• 1995

In this paper, high speed IC package-to-package interconnections are modeled as lossless multiconductor transmission lines operating in the TEM mode. And, three mathematical algorithms for computing electrical parameters of the lossless multiconductor transmission lines are described. A semi-analytic Green's function method is used in computing per unit length capacitance and inductance matrices, a matrix square root algorithm based on the QR algorithm is used in computing a characteristic impedance matrix, and a matrix algorithm based on the theory of M-matrix is used in computing a diagonally matched load impedance matrix. These algorithms are implemented in a computer program DIME (DIagonally Matched Load Impedance Extractor) which computes electrical parameters of the lossless multiconductor transmission lines. Also, to illustrate the concept of design database for high speed IC package-to-package interconnection, a database for the multi conductor strip transmission lines system is constructed. This database is constructed with a sufficiently small number of nodes using the multi-dimensional cubic spline interpolation algorithm. The maximum interpolation error for diagonally matched load impedance matrix extraction from the database is 1.3 %.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.238-242
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• 2001

In this paper, we extracted design parameters for re-entrant mode microstrip directional coupler using FE(finite element) calculations. The microstrip directional coupler suffers from a poor directivity due to effect of the inhomogeneous dielectric including both dielectric substrate and air in microstrip transmission lines. Thus, the phase velocity of even mode is not equal to that of odd mode. In order to improve the directivity of microstrip directional coupler, a novel re-entrant mode microstrip directional coupler was employed. In microstrip configuration, the high directivity can be reached by matching the even- and odd-mode effective phase velocities. Through the values of capacitance obtained from 2-dimensional FE calculations, the phase velocities for each mode and the design parameter were extracted for the proposed parallel coupled-line configuration. Based on the extracted design parameter with phase matching condition, we designed and fabricated a 30dB directional coupler at 0.85GHz. Experimental results show good performance with excellent, isolation and directivity.

• 한국전자파학회논문지
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• 제25권3호
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• pp.259-268
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• 2014

본 논문에서는 S-파라메타를 이용한 절연 변압기의 고주파 파라메타 추출 방법을 제안한다. 정상상태에서 회로상수 추출은 고전적 방법인 무 부하, 단락 회로 시험을 통해 나온 측정값을 계산하여 추출하는 방법이 있으며, 본 논문에서는 VNA(Vector Network Analyzer)로 측정한 S-파라메타를 이용하여 추출하는 방법에 대한 연구를 수행하였다. 상용주파수인 60 Hz를 포함한 고주파 대역에서의 변압기 회로상수는 측정한 S-파라메타에 데이터 피팅(최적화) 방식을 이용하여 추출하였다. 기본적으로 절연변압기에서의 고주파 파라메타 추출은 기존에 제시하는 변압기 등가 회로에 표유정전용량(Stray capacitance)을 추가한 등가회로 형태로 제시된다. 이렇게 추출한 회로상수의 S-파라메타와 실제 측정한 S-파라메타 결과를 비교하여 유사함을 확인하였고, 변압기의 1차 측에 신호발생기를 입력한 후, 출력되는 2차 측의 전압과 고주파 등가회로를 이용하여 추출한 2차 측 전압을 비교하여 두 값이 일치하는 것을 확인하였다. 이 결과를 통해 S-파라메타를 이용한 절연 변압기의 고주파 파라메타 추출 방법의 타당성을 입증하였다.

• 한국전자파학회논문지
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• 제23권2호
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• pp.177-186
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• 2012

본 논문에서는 프로브 커넥터 핀의 누화 특성이 -30 dB 이하를 만족시키는 핀의 피치 및 길이 파라미터에 대한 설계 기준을 제시하였다. 프로브 커넥터 핀의 누화 특성을 분석하기 위하여 격자 구조로 배열된 프로브커넥터 핀의 인덕턴스 성분과 커패시턴스 성분을 추출하였으며, 접지 핀의 개수가 증가해도 이미 계산된 파라미터들을 이용해서 새로운 커패시턴스 및 인덕턴스 성분들을 쉽게 계산할 수 있음을 보였다. 또한, 신호(signal)핀 주변에 위치한 접지(ground) 핀 개수를 증가시키면서 누화 특성을 향상시키는 알고리즘을 제시하였으며, 특히 접지 핀 개수의 증가가 자기장 결합(inductive coupling)에 의한 누화를 효과적으로 제거시킨다는 것을 보였다. 최종적으로는 주어진 접지 핀 개수 및 형상 하에서 -30 dB 이하의 누화 특성을 만족하는 핀의 피치 및 길이를 결정하는 영역을 도시하였으며, 이는 프로브 커넥터 시스템의 누화 특성 설계 시 유용하게 사용할 수 있을 것으로 사료된다.