• The Korean Journal of Physiology and Pharmacology
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• 제24권6호
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• pp.529-543
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• 2020

In contrast to ventricular myocytes, the structural and functional importance of atrial transverse tubules (T-tubules) is not fully understood. Therefore, we investigated the ultrastructure of T-tubules of living rat atrial myocytes in comparison with ventricular myocytes. Nanoscale cell surface imaging by scanning ion conductance microscopy (SICM) was accompanied by confocal imaging of intracellular T-tubule network, and the effect of removal of T-tubules on atrial excitation-contraction coupling (EC-coupling) was observed. By SICM imaging, we classified atrial cell surface into 4 subtypes. About 38% of atrial myocytes had smooth cell surface with no clear T-tubule openings and intracellular T-tubules (smooth-type). In 33% of cells, we found a novel membrane nanostructure running in the direction of cell length and named it 'longitudinal fissures' (LFs-type). Interestingly, T-tubule openings were often found inside the LFs. About 17% of atrial cells resembled ventricular myocytes, but they had smaller T-tubule openings and a lower Z-groove ratio than the ventricle (ventricular-type). The remaining 12% of cells showed a mixed structure of each subtype (mixed-type). The LFs-, ventricular-, and mixed-type had an appreciable amount of reticular form of intracellular T-tubules. Formamide-induced detubulation effectively removed atrial T-tubules, which was confirmed by both confocal images and decreased cell capacitance. However, the LFs remained intact after detubulation. Detubulation reduced action potential duration and L-type Ca²⁺ channel (LTCC) density, and prolonged relaxation time of the myocytes. Taken together, we observed heterogeneity of rat atrial T-tubules and membranous ultrastructure, and the alteration of atrial EC-coupling by disruption of T-tubules.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.597-598
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• 2005

Recently, the performance of portable electric equipment can often improved by a Li-ion battery assisted by a supercapacitor. A supercapacitor can provide high power density as well as a low resistance in the hybrid system. In this study, we have prepared, as the pluse power souce, a commercially supplied Li-ion battery with a capacity of 700mAh and AC resistivity of $60m\Omega$ at 1kHz and nonaqeous asymmetric hybrid capacitor composed of an activated carbon cathode and MCMB anode, and have examined the electrochemical characteristics of hybrid capacitor and the pulse performances of parallel connected battery/hybrid capacitor source. The nonaqueous asymmetric hybrid capacitor, the stacks of 10 pairs of the cathode, the porous separator and the anode electrode were housed in Al-laminated film cell. The hybrid capacitor, which was charged and discharged at a constant current at $0.25mA/cm^2$ between 3 and 4.3V, has exhibited the capacitance of 100F. And the equivalent series resistance was $32m\Omega$ at 1kHz. By combining a Li-ion battery and a hybrid capacitor, the pulse performance of battery can be improved 23% in run time under a pulse discharge of 7C-rate.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• 한국재료학회지
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• 제29권8호
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• 한국표면공학회지
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• 제54권4호
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• pp.178-183
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• 2021

The temperature and frequency dependence of the dielectric constant of the BaTiO₃ substituted with two types of donor dopants, Nb⁵⁺ and Ta⁵⁺, respectively, were compared and analyzed. Dielectric specimens of four specific compositions, Ba_0.95Nb_0.05TiO₃, Ba_0.90Nb_0.10TiO₃, Ba_0.95Ta_0.05TiO₃, and Ba_0.90Ta_0.010TiO₃ were prepared by calcining at 1100 ℃ and sintering at 1300 ℃ to have a perovskite structure to measure capacitance. XRD and SEM analysis were used to observe the structure, with particular focus on the integration into the Nb⁵⁺ and Ta⁵⁺ substituted BaTiO₃ crystal lattice. X-ray diffraction peaks in the (200) and (002) planes were observed between 45.10° and 45.45° of the BaTiO₃ solid solution substituted with different fractions of Nb⁵⁺ and Ta⁵⁺. The dielectric properties were analyzed and the relationship between the properties and structure of the substituted BaTiO₃ was established. The fine particles and high density of the substituted BaTiO₃ were maintained like pure BaTiO₃, and in particular, a shift toward the low temperature side of the phase transition temperature range was clearly found, unlike pure BaTiO₃. In addition, the phase transition at a temperature higher than the Curie temperature relatively satisfies the modified Curie-Weiss law.

• 한국표면공학회지
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• 제55권1호
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• pp.32-37
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• 2022

In a carbon-zero social atmospher, research is underway to reduce the use of fossil fuels. Interest in cleaner energy sources and their storage system is growing, and among them, research on effective energy storage is being actively conducted. Energy storage system(ESS) can be divided into secondary batteries, fuel cells, and capacitors, and the superiority of energy density of secondary batteries has a dominent influence on the ESS market. However, as problems with secondary batteries, charge/discharge speed, safety, and deterioration of electrodes are being highlighted. In this study, an electrode for supercapacitor with superior charge/discharge speed and specific capacitance is manufactured. The manufactured spinel nickel cobalt electrodes had specific capacitances of 1018.8 F/g, 690.8 F/g, and 475.1 F/g at 1 A/g in 1 M KOH electrolyte, and shows a performance retention rate of 77.48%, 63.30%, and 58.16% after 2000cycles at 7 A/g.

• 한국결정성장학회지
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• 제8권4호
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• pp.640-644
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• 1998

Sb/SiC(4H) 및 Ti/SiC(4H) 쇼트키 다이오드(SBD)를 제작하여 그 특성을 조사하였다. 용량-전압(C-V) 측정으로부터 얻은 n-형 SiC(4H)의 주개(donor) 농도는 약 $2.5{\times}10 ^{17}{\textrm}cm^{-3}$이었다. 순방향 전류-전압(I-V) 특성의 기울기로부터 얻은 Sb/SiC(4H) 쇼트키 다이오드의 이상계수는 1.31이었고, 역방향 항복전장(breakdown field)은 약 4.4$\times$102V/cm 이었다. 용량-전압(C-V) 측정으로부터 얻은 Sb/SiC(4H) SBD의 내부전위(built-in potential) 및 쇼트키 장벽 높이는 각각 1.70V 및 1.82V이었다. Sb/SiC(4H)의 장벽높이 1.82V는 Ti/SiC(4H)의 0.91V보다 높았다. 그러나 Sb/SiC(4H)의 전류밀도와 역방향 항복전장은 Ti/SiC(4H)의 것보다 낮았다. Ti/SiC(4H)는 물론 Sb/SiC(4H) 쇼트키 다이오드는 고전력 전자소자로서 유용하다.

• 대한전자공학회논문지SD
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• 제46권12호
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• pp.18-23
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• 2009

본 연구는 실리콘 기판과 실리콘 산화막 사이의 계면 트랩 밀도와 게이트 누설 전류를 조사하여, Metal-Oxide-Nitride-Oxide-Silicon (MONOS) 메모리 소자의 계면 트랩 특성의 수소-질소 열처리 효과를 조사하였다. 고속열처리 방법으로 850도에서 30초 동안 열처리한 MONOS 샘플들을 질소 가스와 수소-질소 혼합 가스를 사용하여 450도에서 30분 동안추가 퍼니스 열처리 공정을 수행하였다. 열처리 하지 않은 것, 질소, 수소-질소로 열처리 한 세 개의 샘플 중에서, 커패시터-전압 측정 결과로부터 수소-질소 열처리 샘플들이 가장 적은 계면 트랩 밀도를 갖는 것을 확인하였다. 또한, 전류-전압 측정 결과에서, 수소-질소 열처리 소자의 누설전류 특성이 개선되었다. 위의 실험 결과로부터, 수소-질소 혼합 가스로 추가 퍼니스 열처리의해 실리콘 기판과 산화막 사이의 계면 트랩 밀도를 상당히 줄일 수 있었다.

• 전기화학회지
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• 제13권2호
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• pp.103-109
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• 2010

$LiNO_3$, $Li(CH_3COO){\cdot}2H_2O$ 그리고 $Mn(CH_3COO)_2{\cdot}4H_2O$를 출발물질로 하여 $Li_4Mn_5O_{12}$를 합성 하였으며 합성방법은 연소합성법을 사용하였다. $Li_4Mn_5O_{12}$는 $400^{\circ}C$ 이상의 열처리 온도에서 얻을 수 있었으나 $400^{\circ}C$로 열처리 하였을 때 $Mn_2O_3$가 같이 존재하는 것을 관찰할 수 있었다. $400^{\circ}C$에서 5시간동안 열처리한 $Li_4Mn_5O_{12}$를 3.7~4.4 V의 전압범위에서 1C-rate로 충방전 하였을 때 가장 좋은 첫 번째 방전용량(41.5 mAh/g)을 나타내었다. 이것을 하이브리드 커패시터에 적용하였을 때 100 mA/g의 전류밀도에서 24.74 mAh/g (10.46 mAh/cc)의 방전용량을 나타내었으며 이때의 에너지 밀도는 39 Wh/kg (16.49Wh/cc)으로 우수하였다.