• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Journal of the Mineralogical Society of Korea
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• v.14 no.1
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• pp.12-20
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• 2001

충북 영동군 동창광산에서 산출되는 일라이트(illite)광선의 표면화학특성을 전위차 적정 실험과 FITEQL3.2 프로그램을 이용하여 연구하였다. 정량 Xtjs 회절 분석에 의한 일라이트 광석의 광물조석은 석영 46.6% 일라이트 41.6% 카올리나이트(kaolinite) 11.8%이며 $N_2$BET 방법에 의하여 구한 비표면적은 $6.52 m^2$g이다. 전위차 적정 실험결과를 그란(Gran)법을 적용하여 구한 일라이트광석의 영전하점($pH_{pznpc}$ )은 pH 3.9 총표면 자리 밀도는 21.24 sites/$nm^2$이다. 표면 복합체 모델중 일정 용량 모델을 적용해 일라이트 광석의 표변 특성에 알맞는 모델을 찾아보았다. 일라이트 광석의 표면을 사면체 자리와 팔면체 자리로 나누어 설정한 2sites$-3pK_{ a}$s 모델은 변수값이 수렴되지않았으므로 부적절하다고 판단된다. 일라이트 광석의 표면을 하나의 균질한 흡착표면으로 가정해서 설정한 1 site -1 $K_{a}$ 와 1 site -2 $pK_{a}$ s 모델 사이에는 뚜렷한 차이는 없지만, 1 site -1 $pK_{a}$ 모델의 WSOS/DF 값이 17, 1 site - 2 $pK_a{s}$ 모델은 26으로서 앞 모델이 보다 적절하다. 이 결과는 일라이트 광석 표면에서 수소의 해리와 첨가 반응 중 첨가 반응을 무시하여도 표면반응을 설명하는 데 큰 무리가 없음을 시사한다. 가장 적절하다고 판단되는 1 site -1 $pK_{a}$ 모델의 $pK_{a}$ 값은 4.17, specific capacitance는 $6F/m^2$ 표면 자리 농도는 $1.15\Times10^{-3}$ mol/L 이다.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.539-546
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• 2006

A study on the polymerization of polyethylenedioxythiophene (PEDOT) and the carbonization process of a separator was carred out in order to apply conductive polymer PEDOT to the winding typed aluminum condenser as a solid electrolyte and a negative electrode. PEDOT was polymerized with ethylenedioxythiophene (EDOT) as a monomer and ferric-p-toluenesulfonate as an oxidizing agent. The separator of condenser element was carbonized to control its fibrous tissue for the purpose of making it easy to impregnate the PEDOT solution into the microporous etched pit of aluminum foil by preventing separator from concentrating the PEDOT solution on itself. The characteristics of condenser such as capacitance, dissipation factor, equivalent series resistance, and thermal resistance depended on a carbonization temperature and a carbonization time. It was found that a thickness and a density of the used separator were major parameters of carbonization process and the characteristics of condenser were affected by these parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.462-468
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• 2018

The piezoelectric energy harvesting characteristics of a trapezoidal cantilever generator with lead zirconate titanate (PZT) laminate were investigated with various Ag inner electrodes. The piezoelectric mode of operation was a transverse mode by using a planar electrode pattern. The piezoelectric cantilever generator was fabricated using trapezoidal cofired-PZT/Ag laminates by five specimens of 2, 3, 4, 7, and 13 layers of Ag. As the number of Ag electrodes increased, impedance and output voltage at resonant frequency significantly decreased, and capacitance and output current showed an increasing tendency. A maximum output power density of $7.60mW/cm^3$ was realized for the specimen with seven Ag layers in the optimal condition of acceleration (1.2 g) and resistive load ($600{\Omega}$), which corresponds to a normalized power factor of $5.28mW/g^2{\cdot}cm^3$.

• Journal of Magnetics
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• v.8 no.4
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• pp.138-141
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• 2003

$Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

• Journal of the Korean Magnetics Society
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• v.27 no.2
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• pp.49-53
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• 2017

Metamaterials composed of split cut wire (SCW) on grounded polyimide film substrate have been investigated for the aim of electromagnetic wave absorbers operated in THz frequency band. Reflection loss and current density distributions are numerically simulated with variations of the SCW geometries using the commercial software. The minimum reflection loss lower than -20 dB has been identified at 5.5~6.5 THz. The simulated resonance frequency and reflection loss can be explained on the basis of the circuit theory of an inductance-capacitance (L-C) resonator. Dual-band absorption can be obtained by arrangement of two SCWs of different length on the top layer of the grounded substrate, which is due to multiple magnetic resonances by scaling of SCWs. With increasing the side spacing between SCWs, a more enhanced absorption peak is observed at the first resonance frequency that is shifted to a lower frequency.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.577-587
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• 2004

A coaxial pulsed plasma thruster (PPT) with a Teflon cavity was designed, and its performance characteristics were examined varying stored energy, cavity length and capacitance. The PPT was tested as the entire system including the discharge circuit, and the results were explained with both the transfer efficiency and the acceleration efficiency. The transfer efficiency is defined as the fraction of energy in capacitors supplied into plasma, and the acceleration efficiency as the fraction of energy supplied into plasma converted to thrust energy. To estimate these efficiencies, the equivalent plasma resistance was defined and calculated using energy conservation during discharge. The equivalent plasma resistance proportionally increased with cavity length, and therefore the current peak increased with decreasing cavity length. The energy density calculated by the transfer efficiency was increased with decreasing cavity length. As a result, higher acceleration efficiency and lower transfer efficiency were obtained with shorter cavity length. Accordingly, there was an optimal cavity length for the thrust efficiency. The specific impulse and the impulse bit per unit stored energy ranged from 390 s and 50 $\mu$ Ns/J for a cavity length of 34 mm to 825 s and 11 $\mu$ Ns/J for a cavity length of 4 mm when the stored energy was fixed to 21.4J. Thus, it was showed that the performance of this PPT approached that of electromagnetic-acceleration-type PPT with decreasing cavity length. The PPT achieved thrust efficiencies of 10-12% at 21.4 J and 6-7% at 5.35 J at cavity lengths between 14 mm and 29 mm.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.