• 제목/요약/키워드: candidate materials

검색결과 809건 처리시간 0.026초

고효율 적층형 태양전지를 위한 유무기 페로브스카이트 (Organic-Inorganic Perovskite for Highly Efficient Tandem Solar Cells)

  • 박익재;김동회
    • 세라미스트
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    • 제22권2호
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    • pp.146-169
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    • 2019
  • To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuInxGa(1-x)Se2 bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

Liquid Delivery MOCVD로 증착된 강유전체 BDT 박막의 피로 특성 향상 (Improvement of Fatigue Properties in Ferroelectric Dy-Doped Bismuth Titanate(BDT) Thin Films Deposited by Liquid Delivery MOCVD System)

  • 강동균;박윈태;김병호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.171-171
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    • 2007
  • Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

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Improvement of Thermoelectric Properties in Te-Doped Zintl Phase Magnesium-Antimonide

  • Rahman, Md. Mahmudur;Ur, Soon-Chul
    • 한국재료학회지
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    • 제31권8호
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    • pp.445-449
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    • 2021
  • Zintl compound Mg3Sb2 is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg3.8Sb2-xTex (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg3.8Sb1.99Te0.01, indicating an improved ZT value over the intrinsic value.

전호 지하부와 지상부 추출물의 주요성분 및 생리활성 비교 (Comparison of Main Compounds and Physiological Activities of Anthriscus sylvestris (L.) Hoffm. Roots and Aerial Parts Extracts)

  • 김솔;김하림;김상준;김선영
    • 생약학회지
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    • 제52권2호
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    • pp.77-83
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    • 2021
  • The number of people suffering from diabetes have been increased around the world. In this study, we investigated the antidiabetic and antioxidant effects of Anthriscus sylvestris(L.) Hoffm and its main compounds. It was divided into root(R) and aerial part(AP) for comparative analysis. Total polyphenol, total flavonoid content was higher in AP extract, but nodakenin content was higher in R(1169.13 ± 6.00 mg/g) extract. Antioxidant activity was also higher in AP extract. To compare antidiabetic efficacy, we analyzed the effects of R and AP extracts on ɑ-glucosidase inhibition(AGI), dipeptidyl peptidase-4(DPP-4) and protein tyrosine phosphatase(PTP)1B activity. R and AP extracts showed similar effects on AGI and DPP-4 activity in a concentration dependent manner, and there was no effect on PTP1B activation. Glucose uptake(139.51 ± 3.19%) in 3T3-L1 cells was more effective in the AP extract-treated group than the positive control, rosiglitazone, group. Both R and AP extracts were effective in protecting against pancreatic beta cell damage caused by hyperglycemia. These results suggest that Anthriscus sylvestris(L.) Hoffm. could be used as a candidate for diabetes treatment.

구리 집전판에 직접 합성한 탄소나노튜브의 전기이중층 커패시터 특성 (Characterization of Electric Double-Layer Capacitors with Carbon Nanotubes Directly Synthesized on a Copper Plate as a Current Collector)

  • 정동원;이창수;박순;오은석
    • 대한금속재료학회지
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    • 제49권5호
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    • pp.419-424
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    • 2011
  • Carbon nanotubes (CNTs) were directly synthesized on a copper (Cu) plate as a current collector by the catalytic thermal vapor deposition method for an electric double-layer capacitor (EDLC) electrode. The diameters of vertically aligned CNTs grown on the Cu plate were 20~30 nm. From cyclic voltammetry (CV) results, the CNTs/Cu electrode showed high specific capacitance with typical profiles of EDLCs. Rectangularshaped CV curves suggested that the CNTs/Cu electrode could be an excellent candidate for an EDLC electrode. The specific capacitances were in a range of 25~75 F/g with a scan rate of 10~100 mV/s and KOH electrolyte concentration 1~6 M, and were maintained up to 1000 charge/discharge cycles due to strong adhesion between the Cu substrate and the CNTs.

SI-BASED MAGNETIC TUNNELING TRANSISTOR WITH HIGH TRANSFER RATIO

  • S. H. Jang;Lee, J. H.;T. Kang;Kim, K. Y.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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    • pp.24-24
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    • 2003
  • Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

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헬리콥터용 힌지없는 축소 복합재료 허브부품 구조 설계 및 해석 (Structural Design and Analysis of Composite Parts for Small-scaled Hingeless Hub System of Helicopter)

  • 김덕관;주진
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2002년도 춘계학술발표대회 논문집
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    • pp.173-176
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    • 2002
  • This paper describes the design procedure of composite parts for hingeless hub system of helicopter. These composite parts are composed of flexure and sleeve. The design of this composite flexure is an important technique in hingeless hub system since the rotor system stability and dynamic characteristics depends on this flexure characteristics. The objective of this research is to replace the existing metal hub parts with composite to improve the performance and stability. First, the coupon test of candidate composite material for hub parts was conducted. The hub parts was designed based on test results and the manufacturing possibility by using Fiber Placement System(FPS) was checked. Also the dynamic analysis and stress analysis of composite hub parts was conducted. Through this research, we will find out the possibility of replacing existing metal hub parts with composite.

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DNA 기반 금속 나노 와이어의 제작기술 (DNA Metallization for Nanoelectronics)

  • 한경엽;이정규
    • 공업화학
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    • 제29권3호
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    • pp.253-257
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    • 2018
  • DNA를 기반으로 한 금속 나노와이어는 전기적인 물성은 떨어지지만, 제작 방식이 간단하고, 대면적에서 대량으로 제작할 수 있으며, 유기 반응을 통해 분자 소자 제작의 기판으로도 사용가능한 차세대 재료로 전망된다. 본 총설에서는 DNA 금속화 반응을 이용한 나노와이어의 제작 및 3차원 구조체의 제작 기술에 대해 소개하고, 이와 관련한 연구 현황과 발전 방향에 대해 논의하고자 한다.

폴리이미드 전구체 초박막의 분자배향과 표면상태에 관한 연구 (A Study on the Molecular Orientation and the Surface Mophology of polyimide precursor ultrathin film)

  • 정순욱
    • 한국응용과학기술학회지
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    • 제22권3호
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    • pp.228-233
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    • 2005
  • Langmuir-Blodgett(LB) technique can speak the best candidate of the future molecular electronic devices. But, precursor as molecular ultrathin film devices require the bulk property that are influenced by the molecular orientation. So, this device is one of current interest in molecular electronic device development of new materials. In this study, quantitative evaluation of molecular orientation in LB films of polyamic acid alkylamine salt was performed analysis experiment comparing the absorption or transmission intensity of the FT-IR spectrometer and reflection or absorption spectra with UV-visible absorption spectra. It could find that the polar angle(${\theta}$) of the dipole moment appears in about $68^{\circ}$ and the tilting angle of the alkyl chain is about $11.5^{\circ}$.

Partial Conductivities, Nonstoichiometry and Defect Structure of a New Cathode Candidate $Y_{1-x}Ca_xFeO_{3-\delta}$

  • Kim, Chan-Soo;Yoo, Han-Ill
    • The Korean Journal of Ceramics
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    • 제4권2호
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    • pp.151-155
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    • 1998
  • The total electrical conductivity, ionic conductivity, and nonstoichimetry of a new cathode material $Y_{1-x}Ca_xFeO_{3-\delta}$ (x=0.1) were measured as functions of temperature ($900\leqT/^{\circ}C\leq1100$) and oxygen partial pressure $(10^{-6}\leqPo_2/atm\leq0.21$). Isothermal variations of these properties with $Po_2$ support that the majority type of ionic defects are anti-Frenkel disorder which, however, has seldom been considered for perovskite-based oxides. The results are discussed in comparison with those reported on similar oxides.

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