• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.1091-1093
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• 2010

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.315-323
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• 1997

The sing1e crystal of cadmium sulfide was grown by vertical sublimation method. The lattice constants of CdS single crystal by extrapolation method are $a_0=4.139\AA$ and $c_0=6.719\AA$, respectively. The $Cu_2$S/CdS solar cell was fabricated using the single crystal of cadmium sulfide and the CuCl solution. The light- to- dark JV cross over effect of the $Cu_2$S/CdS solar cell was measured after annealing for 2 minutes at $250^{\circ}C$ in air atmosphere. The values of Voc, Jsc, Vop, FF, and efficiency are 0.40 volt, $4.2mA/\textrm{cm}^2$, 0.31 volt, $3.8mA/\textrm{cm}^2$, 0.68 and 3.8 %, respectively. The spectral response of the solar cell shows the peaks at 498 nm (2.49 eV) and 585 nm (2.12 eV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.170-173
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• 2010

Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.225-230
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• 2011

CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling temperature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and diffraction method we confirmed that ${\beta}$-indium sulfide was formed on ITO electrode surface.

• Journal of Hydrogen and New Energy
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• v.1 no.1
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• pp.9-14
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• 1989

Mixed photocatalyst containing cadmium sulfide and zinc sulfide was prepared on silica gel powder and Nafion film. Photo-irradiation of aqueous mixture containing the photocatalysis generated hydrogen by water cleavage reaction. Use of sodium sulfide as sacrificial reagent help the photo-reaction. Evolution of the hydrogen was measured by gas chromatographic analysis. Composition of the catalyst was determined by atomic absorption spectrophotometer. 0.2 mL of of hydrogen was generated per hour. The maximun catalytic activity was obtained after 8-12 hours later. Hydrogen generation efficiency by the two different catalytic system was compared and showed that the Nafion-based catalyst is more efficient than the silicagel-based catalyst for the photoreaction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• Bulletin of the Korean Chemical Society
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• v.23 no.11
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• pp.1519-1523
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• 2002

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.152-156
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• 2014

We report hybrid solar cells fabricated with polymer/fullerene bulk heterojunction layers that contain inorganic nanocrystals synthesized by in-situ reaction in the presence of polymer chains. The inorganic (cadmium sulfide) nanocrystal ($CdS_{NC}$) was generated by the reaction of cadmium acetate and sulfur by varying the reaction time up to 30 min. The synthesized $CdS_{NC}$ showed a rectangular flake shape, while the size of $CdS_{NC}$ reached ca. 150 nm when the reaction time was 10 min. The performance of hybrid solar cells with $CdS_{NC}$ synthesized for 10 min was better than that of a control device, whereas poor performances were measured for other hybrid solar cells with $CdS_{NC}$ synthesized for more than 10 min.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.