• Journal of Powder Materials
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• v.6 no.2
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• pp.139-144
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• 1999

The pure Ti, Ni and carbon powders were reaction milled to synthesize the TiC-Ni based cermet powders with ultrafine microstructures. After milling, the ultrafine TiC or amorphous Ti-Ni phase was obtained, respectively, according to the milling condition. The effects of milling variables on the synthesizing behavior of the powders were investigated in detail. The sintered TiC-Ni based cermet of the reaction milled powders consisted of very fine TiC of 0.2~1.5$\mu$m, as compared with that of a commercial cermet of 3~5$\mu$m. This demonstrates the potenial of reaction milling as an effective processing route for the preparation of cermet materials.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.371-380
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• 1989

The purpose of this experiment is to elucidate the reaction mechanism concerning to the formation of crystalline BaTiO3 synthesized by adding the pH control agent(KOH soln) in TiCl4 and BaCl2 solution (Wet direct synthetic method). In this expeirment, it is identified that the amorphous barium-titanate having Ba-O-Ti bonding is formed above pH5 due to the -OH- ion and Ti-gel is formed below pH5 due to the polymerization of metatitanic acid. The bonding of the amorphous Ba-O-Ti is identified by FT-IR spectrum and crystallization temperature is about 82$0^{\circ}C$. If the pH of the above system according to the -OH- ion concentration is above 13.8, the polymerized metatitanic acid will be depolymerized and produce [TiO3]2+ion and crystalline BaTiO3 is formed by reacting the produced [TiO3]-- ion with the active Ba++ ion.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.51-55
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• 1999

Cesium titanium(III) pyrophosphate 화합물인 CsTiP2O7을 합성하고 X절 회절법을 이용하여 그 결정구조를 해석하였다. 이물질은 단사정계의 P21/a 공간군으로 결정화되었고 a=8.369(2) , b=10.208(2) , c=7.752(1) , β=104.77(2)o, V=640.4(2) 3, and Z=4이다. 이 물질의 구조는 모서리를 공유하고 있는 TiO6 팔면체와 P2O7 pyrophosphate group들로 구성된 framework로 구성되어 있으며 그 결과로 형성된 tunnel 안에는 Cs+이온이 존재한다. CsTiP2O7은 ATiP2O7(A=K, Rb)와 KAIP2O7 그리고 AMoP2O7(A=K, Rb, Cs)등 다른 +3금속 pyrophosphate들로 유사한 구조를 가지고 있다. 이 물질은 [Cs+][Ti3+][P2O74-]의 식으로 표현할 수 있다.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.206-213
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• 1991

The crystallized solder glasses with the low melting temperature for electronic package were prepared with the compositions of 77-80wt% PbO, 4.5-6wt% ZnO, 7.5-8.5wt% $B_2O_3$, 1-2wt% CaO, and 0.5-2.0wt% $P_2O_5$ containing 3-7wt% $TiO_2$. The Characterization of the solder glasses were studied using DTA, SEM and XRD. Frit containing 3wt% $TiO_2$ had crytallzation temperature range of $420-440^{\circ}C$. The major crystalline phase was identified as $2PbO{\cdot}ZnO{\cdot}B_2O_3$ by X-ray diffraction. Frits containing 4 wt% $TiO_2$ consisted of crysalline Phases of $PbTiO_3$ and $2PbO{\cdot}ZnO{\cdot}B_2O_3$ in the temperature range of $420-440^{\circ}C$, When g1ass frit containing 5wt% $TiO_2$ were heat-treated in the temperature range of $440-460^{\circ}C$, major crytalline phase was perovskite lead titanate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.405-410
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• 2010

The photovoltaic performance of DSSCs fabricated with different electrode thickness and different annealing temperature with the P25 $TiO_2$ and the Dyesol $TiO_2$ was measured. Thickness change of $TiO_2$ electrodes was measured using cross-sectional FE-SEM before and after annealing. Photovoltaic efficiencies of DSSCs were also measured by changing annealing temperature of platinum (Pt) paste on the counter electrode. Photovoltaic performances of DSSCs made with one layer of P25 (${\sim}20.4\;{\mu}m$) and one layer of Dyesol $TiO_2$ (${\sim}9.1\;{\mu}m$) annealed at $500^{\circ}C$ for 30 min. showed highest efficiencies of 3.8% and 5.8%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.65-69
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• 2012

Composite coating can be manufactured during the electroplating with the bath containing a suspension of particles: ceramic, polymer, nanopowders. Improvement of hardness, wear resistance, corrosion resistance and lubrication properties are well-known advantage of composite coating. In this study, nano $TiO_2$ powder dispersed Ni composite plating was investigated. The improvement of surface hardness and photo decomposition effects can be expected in this coating. Zeta potential was measured with pH. The effect of ultrasonication time and types of ultrasonicator were studied to minimize the agglomeration of $TiO_2$ nanopowders in the electrolyte. Optimum conditions for nano $TiO_2$ dispersed Ni composite coating were $40mA/cm^2$ of current density, pH 3.5, and $50^{\circ}C$. At these conditions, $TiO_2$ nanoparticles contents in the Ni deposit was 15-20 at.%.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.737-743
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• 1995

Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

• Journal of the Korean Society for Heat Treatment
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• v.6 no.3
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• pp.159-165
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• 1993

Creep tests of the TiC particulate reinforced Al composite have been conducted in the temperature ranges from 200 to $500^{\circ}C$. The steady-state cree rate of the composite depended strongly on the temperature and ap' plied stress. The stress exponent for the steady state creep rate of the composites was approximately 17.5 and the activation anergy was calculated to be 390KJ/mol. The steady-state creep equation could be written as $\acute{\varepsilon}_{ss}$ $$(s^{-1})=1.5{\times}10^{-9}\;{\sigma}^{17.5}\exp(-390000/RT)$$. Fracture surface examination showed that the fracture mode of the particulate reinforced composite was ductile by plastic tearing of the aluminum matrix and TiC particle interfaces were offered as sites for crack.