• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.415-415
• /
• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• Journal of the Korean Ceramic Society
• /
• v.31 no.6
• /
• pp.617-622
• /
• 1994

Single crystals of misfit layered (LaS)xVS2(x 1.18) were grown using LaCl3(or I2) as a mineralizer (or transport agent) for the single crystal X-ray diffraction analysis. Procession photographs of (LaS)xVS2(x 1.18) were analyzed as the stacking structure of two kinds of LaS-and VS2-subcell. The result shows that two sublattices have common periodicities along the a*-and c*-axes, respectively, but not along the b*-axis. Sublattice dimensions of LaS and VS2 layers along b-axis were 5.67$\AA$ and 3.42$\AA$, respectively. Their ratio was 1.657 which is very close to 5/3.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.1-4
• /
• 2001

Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.12
• /
• pp.863-866
• /
• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• Korean Journal of Materials Research
• /
• v.6 no.1
• /
• pp.57-66
• /
• 1996

MoSi2 heating elements were fabricated by sintering of MoSi2 powders which were synthesized through SHS(Self-propagating high-temperature synthesis). Their high-temperature oxidation behavior in air through SHS(Self-propagating high-temperature synthesis). Their high-temperature oxidation behavior on air at 1000-1600$^{\circ}C$ was investigated through a high-temperature X-ray diffractomer and isothermal heating in a muffle furnace. The thermal expansion of MoSi2 and SiO2 was studied by measuring their lattice parameters on heating. The linear expansion coeffcient of MoSi2 along c-axis was about 1.5 times larger than that along a-axis showing a strong thermal anisotropy. Few $\mu\textrm{m}$-thick Mo5Si3 layer was found beneath SiO2 layer suggesting that The major reaction products would be SiO2 and Mo5Si3. The Si-rich bentonite resulted in the faster growth of MoSi2 grains probably by enhancing the mass transport when they are melted during high-temperature oxidation.

• Progress in Superconductivity
• /
• v.4 no.2
• /
• pp.104-108
• /
• 2003

We have measured the transport properties of $Bi_2$$Sr_2$$CaCu_2$$O_{8+d}$ (BSCCO) intrinsic Josephson junction mesa. Transport measurements with current flow along the c-axis, perpendicular to the layer of mesa showed multi-branch structures on the current-voltage characteristics. For single intrinsic junctions, the microwave radiation appears in the form of three different modes of oscillations, which include Josephson emission, nonequilibrium broad emission and sharp coherent microwave emission. Mutual phase interactions between two-mesas structures of BSCCO intrinsic Josephson junctions were studied. The results were explained within the framework of the Josephson plasma excitation model due to quasiparticle injection.n.

• Progress in Superconductivity
• /
• v.7 no.1
• /
• pp.52-57
• /
• 2005

[ $YBa_{2}Cu_{3}O_y$ ] superconducting films were prepared on $LaAlO_3$(100) single crystal substrate by spray pyrolysis method. The precursor solution was prepared by dissolving nitrate powders in de-ionized water. Both of ultrasonic and concentric nebulizers were used in order to generate fine droplets of precursor solution. C-axis oriented films were obtained at deposition temperature of $750\~850^{\circ}C$ and working pressure of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, films showed rough and porous surface morphology due to formation of enormous droplets, while smooth and dense films were obtained for concentric nebulizer. A transport $J_c$ value of $0.43\;MA/cm^2$ at 77 K and self field was achieved on $LaAlO_3$(100) single crystal substrate.

• Design & Manufacturing
• /
• v.10 no.2
• /
• pp.39-43
• /
• 2016

Most of automobile parts manufactured through sheet metal forming are mass-produced by using press mold. In recent years, automation and speeding up of press lines have been expanding to maximize product productivity using a press die. The proportion of the moving time in the press line is high, and therefore requires high-speed and automated equipment for the moving process. In this paper, to provide the double-moving system can be the moving time reduction and increased productivity. Developed transport system consists of the material supply, the material feeding device and the PLC controller and the devices are positioned between each of the pressing process. In this paper, the double-moving system including developed units using a multi-axial single-acting through this reduced the C/T(cycle time) and improved the productivity.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.18-23
• /
• 1996

The molding pressure is also one of the important parameters in the preparation of HTSC materials by the solid state reaction method. In the present study, changes in structural, electrical and microstructural proper-ties with the molding pressure in YiB $a_{2}$C $u_{3}$ $O_{70{\delta}}$ superconductors have been performed. The investigated molding pressures were 0.5*10$^{3}$ N/c $m^{2}$, 1*10$^{3}$ N/c $m^{2}$, 2*10$^{3}$ n/c $m^{2}$ and 4*10$^{3}$ N/c $m^{2}$. As the molding pressure increased, the anisotropy of the crystal structure decreased and the grains have been grown preferentially in a c-axis direction. Since the size of the grain becomes larger with the decrease of the porosity, denser textures are formed. The results indicated that the critical current density is improved resulting from the enhanced densification due to higher molding pressure. When the molding pressure was between 1*10$^{3}$ N/c $m^{2}$ and 2*10$^{3}$ N/c $m^{2}$, while it did not affect the oxygen deficiency and Tc, the increase of the molding pressure affects remarkably on grain size and densification of the $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-{\delta}}$. When the molding pressure is larger than 2*10$^{3}$ N/c $m^{2}$, electrical proper-ties are independent on the molding pressure..

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.1
• /
• pp.6-9
• /
• 2015

For many applications of $ReBa_2Cu_3O_{7-x}$ (ReBCO) tapes it is needed to know the anisotropic properties of the used conductor in a broad range of magnetic field. In this paper we present the results of transport measurements on the SuNAM tape (GdBaCuO) with the rotation of the sample in magnetic fields up to 5 T in liquid nitrogen. The critical current over the magnetic field orientation ($I_c({\theta})$) curves demonstrate the appearance of distinct second peak around c-axis in low fields. This peak almost vanishes in the fields over 3 T. The evolution of the ab-peak form is also presented: the peak consistently reduces its height with the magnetic field going up and in the high fields the shoulders rise, changing the type of the distribution. To describe experimental curves the vortex path model was applied to the angular distributions of the critical current in magnetic field. Good agreements of the experimental data with the analytical expressions were obtained that confirm the vortex path model approach.