Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Seed Crystal Surface Properties for Polytype Stability of SiC Crystals Growth

탄화규소 단결정의 폴리타입 안정화를 위한 종자정 표면특성 연구

  • Lee, Sang-Il (Department of Components & Materials Engineering, Dong-Eui University) ;
  • Park, Mi-Seon (Department of Components & Materials Engineering, Dong-Eui University) ;
  • Lee, Doe-Hyung (Department of Components & Materials Engineering, Dong-Eui University) ;
  • Lee, Hee-Tae (Department of Components & Materials Engineering, Dong-Eui University) ;
  • Bae, Byung-Joong (Department of Components & Materials Engineering, Dong-Eui University) ;
  • Seo, Won-Seon (Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Won-Jae (Department of Components & Materials Engineering, Dong-Eui University)
  • 이상일 (동의대학교 융합부품공학과) ;
  • 박미선 (동의대학교 융합부품공학과) ;
  • 이도형 (동의대학교 융합부품공학과) ;
  • 이희태 (동의대학교 융합부품공학과) ;
  • 배병중 (동의대학교 융합부품공학과) ;
  • 서원선 (한국세라믹기술원 에너지환경소재본부 에너지변환소재팀) ;
  • 이원재 (동의대학교 융합부품공학과)
  • Received : 2013.08.23
  • Accepted : 2013.11.18
  • Published : 2013.12.01
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Abstract

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

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References

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