• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Journal of Adhesion and Interface
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• v.10 no.1
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• pp.30-34
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• 2009

The effect of pressure on the thermal conductivity in two-phase composite system was studied. Thermally conductive polypropylene (PP)/silicon carbide (SiC) composites were prepared by applying various pressures from 0 to 20 MPa. The thermal conductivity of the composite was 1.86 W/mK at 20 MPa, increased by 40% compared to the value of at 0 MPa. It was 9 times higher than that of unfilled polypropylene. It implies the pressure induces the easy path for phonon transport. Also, the experimental values were compared with Maxwell's prediction and Agari's prediction. Agari's prediction gave a better agreement compared to that of Maxwell's prediction due to the consideration of interactions between filler-filler and filler-polymer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• Journal of Powder Materials
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• v.1 no.1
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.645-647
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• 2008

In this paper, we analyzed interface trap density between pentacene and PVP and SiO2 gate dielectric by using high-low C-V characteristics. The interface trap density was $10^{13}\;cm^{-2}eV^{-1}$.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.35-41
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• 2003

Sintered alumina ceramics were joined by 2 kinds of SiO$_2$-CaO-A1$_2$O$_3$ glass solders having a similar expansivity as alumina. Wetting of glass/alumina was examined by sessile drop method. The observation of interface and bending strength related to alumina/glass/alumina systems were investigated by means of SEM/EDX and 4-point bending test. the result are summarized as follow: (1) Wetting of glass solders on alumina was good at temperatures higher than 145$0^{\circ}C$. (2) When the joining temperature wan high, diffusion and/or reactions between solder md alumina took place at the interface. These diffusions and reactions occurring at the interface greatly affected the bending strength of joining body. (3) Highest strength corresponding to 80% that of alumina was obtained by the solder of 35SiO$_2$-35CaO-30A1$_2$O$_3$(wt%) glass.

• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.462-466
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• 2004

The bi-materials composed of $Al-5wt{\%}Mg$ and its composite reinforced with SiC particles were prepared by ball-milling and subsequent sintering process. The size of powder in Al-Mg/SiCp mixture decreased with increasing ball-milling time, it was saturated above 30 h when the ball and powder was in the ratio of 30 to 1. Both $Al-5wt{\%}Mg$ powders mixture and $Al-5wt{\%}Mg/SiCp$ mixture were compacted under a pressure of 350MPa and were bonded by sintering at temperatures ranging from 873K to 1173K for 1-5h. At 873k, the sound bi-mate-rials could not be obtained. In contrast, the bi-materials with the macroscopically well-bonded interface were obtained at higher temperatures than 873K. The length of well-bonded interface became longer with increasing temperature and time, indicating the improved contact in the interface between unreinforced Al-Mg part and Al-Mg/SiCp composite part. The relative density in the bi-materials increased as the sintering temperature and time increased, and the bi-materials sintered at 1173K for 5h showed the highest density.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.168.1-168
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• 2003

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.785-792
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• 1991

An investigation of the crack propagation behavior of Al2O3-33Vol.% SiCw at 140$0^{\circ}C$ was conducted with various loading frequencies. Higher crack propagation was observed in lower frequency and higher load ratios. Interface sliding fracture due to glassy phase from the oxidation of SiCw and cavitation along grain boundary of diffusional creep appeared to be the main mechanism of fatigue fracture in slower crack propagation while interface sliding and whisker pull out aided by glassy phase formation played main role of fatigue fracture for higher crack growth condition. The frequency effect on deformation behavior was discussed with a Maxwell model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.125-125
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• 2012

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).