• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.981-986
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• 2000

Er(NO$_3$)$_3$.5$H_2O$, Mn($CH_3$$CO_2$)$_2$.4$H_2O$를 출발원료로 사용하여 졸-겔법으로 제조한 ErMnO$_3$박막의 열처리 온도 및 기판 배향성에 따른 박막 배향성과 누설 전류 특성에 관하여 연구하였다. ErMnO$_3$박막은 75$0^{\circ}C$ 이하의 온도에서 1시간 열처리 시비정질상태였으나, 78$0^{\circ}C$ 이상의 온도에서 hexagonal pahse인 ErMnO$_3$로 결정화되었다. 열처리 온도가 증가할수록 기판 배향성과 무관하게 모든 방향으로 결정이 성장함을 알 수 있었다. 결정화 정도와 결정 성장 축에 따라 누설 전류 값이 변화함을 알 수 있었고, 80$0^{\circ}C$에서 열처리한 시편에서는 누설 전류 변화가 비선형적인 경향으로 증가하였으며, $10^{-5}$ A/$ extrm{cm}^2$ 이하로 유지되었다.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.214-217
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• 2003

In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.87-92
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• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.246-246
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• 2011

졸-겔 스핀코팅(sol-gel spin-coating)법을 이용하여 실리콘 기판에 ZnO 박막을 증착하였다. 증착된 졸 용액을 전열처리(pre-heat treatment) 후, 다른 속도로 상온까지 냉각시켰다. ZnO 박막의 특성 분석을 위하여 atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, photoluminescence (PL)을 이용하였다. 전열처리 후 5$^{\circ}C$/min의 속도로 천천히 냉각시킨 ZnO 박막은 산맥구조(mountain chain structure)로 표면이 매우 거친 반면, 빠르게 냉각시킨 ZnO 박막은 매우 매끄러운 표면을 나타내었다. 빠르게 냉각시킨 ZnO 박막의 c-축 배향성(c-axis preferred orientation)이 느리게 냉각시킨 ZnO 박막의 배향성보다 더 우세하게 나타났고, 결정성도 우수하였다. 뿐만 아니라, 빠르게 냉각시킨 ZnO 박막의 광학적 특성이 느리게 냉각시킨 ZnO 박막의 특성보다 우수하게 나타났다. 후열처리(post-heat treatment)에 의해 ZnO 박막의 구조적 및 광학적 특성이 더욱 향상되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.617-624
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• 2000

Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron reactive sputtering. The charcteristics of ZnO thin films on argon/oxygen(Ar/O$_2$)gas ratios RF power and substrate temperature were investigated by XRD, SEM, and AFM analyses. C-axis preferred orientation resistivity and surface roughness highly depended on Ar/O$_2$gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of 9$\times$10$^{7}$ $\Omega$cm was obtained at a working pressure of 10 mTorr with Ar/O$_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/O$_2$=50/50 showed the excellent roughness value of 28.7$\AA$.

• Journal of Sericultural and Entomological Science
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• v.38 no.2
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• pp.180-185
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• 1996

Biosynthesis tracing of the silk fibroin in Bombyx mori silkworm was examined in vivo with isotopic [1-13C] Gly. labeling by nuclear magnetic resonance method. The [1-13C] Gly. labeled silk fibroin yielded very sharp 13C NMR signal in the posterior silk gland as well as in aqueous solution and the amound of [1-13C] Gly. labeled signal in the silkworm increased gradually and rapidly to 5-th day of fifth instar. However, the decomposition or decrease of the [1-13C] Gly. labeled signal occured from 5-th to 9-th day of fifth instar unexpectedly. These findings suggest that a relative amount of ${\alpha}$-helical portion or amorphous silk II portion was formed without any further signal from 6-th day of fifth instar to pupation. Through peak separation of orientation spectrum, between the fiber axis and the molecular bond direction, N-H bond in Bombyx mori silk fiber as well as the orientation distribution around the silk fibroin axis were determined and two kinds of peaks were also obtained from this orientation spectrum.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.560-564
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.12
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• pp.2251-2257
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• 2006

We fabricated ZnO thin film successfully by using RF magnetron sputtering and investigated its potential for being utilized as the key material of piezoelectric device with the characterization of ZnO thin film such as such as crystallinity, surface morphology, c-axis orientation, film density. In thin study, $Ar/O_2$ gas ratio is fixed 70/30, RF power 125W, working pressure 8mTorr, distance between substrate and target 70mm, but the substrate temperature is varied from room temperature to $400^{\circ}C$. The relative intensity ($I_{(002)}/I_{(100)}$) or (002) peak in ZnO thin film deposited at $300^{\circ}$ was exhibited as 94%, then its FWHM was $0.571^{\circ}C$. Also, from the surface morphology evaluated by SEM and AFM, the film deposited at $300^{\circ}C$ showed uniform particle shape and excellent surface roughness of 4.08 m. The tendency of ZnO thin film density was exhibited to be denser with increasing substrate temperature but slightly decreased at near $400^{\circ}C$.