Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on C-axis Preferred Orientation of ZnO Thin Film at Ar/$O_2$gas ratios

Ar/$O_2$에 따른 ZnO 박막의 C-축 배향성에 관한 연구

  • 이동윤 (한국과학기술연구원 박막기술연구 센터) ;
  • 박용욱 (국민대학교 전자공학과) ;
  • 남산 (고려대학교 재료공학과) ;
  • 이전국 (한국과학기술연구원 박막기술연구 센터) ;
  • 김현재 (한국과학기술연구원 박막기술연구 센터) ;
  • 윤석진 (한국과학기술연구원 박막기술연구 센터) ;
  • 황금찬 (연세대학교 전기컴퓨터공학과)
  • Published : 2000.07.01
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Abstract

Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron reactive sputtering. The charcteristics of ZnO thin films on argon/oxygen(Ar/O$_2$)gas ratios RF power and substrate temperature were investigated by XRD, SEM, and AFM analyses. C-axis preferred orientation resistivity and surface roughness highly depended on Ar/O$_2$gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of 9$\times$10$^{7}$ $\Omega$cm was obtained at a working pressure of 10 mTorr with Ar/O$_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/O$_2$=50/50 showed the excellent roughness value of 28.7$\AA$.

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