• Title/Summary/Keyword: bulk structure

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HANDY MAX급 DOUBLE HULL BULK CARRIER의 구조적 안전성 고찰 (Study of Structural Safety for Handy Max Double Hull Bulk Carrier)

  • 문정우;윤혜림;남형주;신성광
    • 대한조선학회 특별논문집
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    • 대한조선학회 2013년도 특별논문집
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    • pp.81-84
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    • 2013
  • 일반적인 Bulk carrier는 Single deck, Double bottom, Hopper side tank, Top side tank와 함께 Single side skin 또는 Double side skin으로 구성되어 Single hull bulk carrier 또는 Double hull bulk carrier라 불린다. 본 논문의 연구선박인 Double hull bulk carrier는 CSR에서 규정짓고 있는 Double hull bulk carrier의 특징 중 Hopper side tank가 없기에 일반적인 Double hull bulk carrier와는 다른 구조를 가진다. 구조적 특징으로는 Inner bottom과 Inner hull 연결부위에 응력 집중 발생, Side shell의 Shear에 대해 구조적 안전성, Double hull에 대한 CSR for bulk carrier의 Rule적용 여부에 대한 판단 등이 있다. 따라서 본 연구에서는 Double hull bulk carrier의 구조적 특징과 구조해석을 통한 응력 집중 부위의 평가 및 Fatigue analysis을 통한 피로수명을 계산하여 이를 통해 구조의 안전성을 살펴보고자 한다.

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새로운 Bulk type LDMOSFET의 전기적 특성에 대한 연구 (A Study on electrical characteristics of New type bulk LDMOS)

  • 정두연;김종준;이종호;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.170-173
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    • 2003
  • In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

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Thin Wire와 SRR을 이용한 3D 등방성 Metamaterial Bulk 구조 설계 및 분석 (Design and Analysis of 3D Isotropic Metamaterial Bulk Structure Using Thin Wire and SRR)

  • 김충주;이범선
    • 한국전자파학회논문지
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    • 제22권9호
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    • pp.919-925
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    • 2011
  • 본 논문에서는 thin wire와 SRR(Split Ring Resonator)을 이용하여 유전율과 투자율을 동시에 제어할 수 있는 3D 등방성 단일 셀을 설계하고 분석해 살펴보았다. 등방성을 갖는 3D bulk 구조를 설계하기 위해서는 모든 면에서 바라본 bulk의 구조 특성이 매우 유사해야 한다. 이러한 구조를 구현하기 위하여 본 논문에서는 thin wire와 상하좌우가 모두 대칭인 SRR 구조를 설계하였으며, 이를 3D bulk 구조에 적용한 결과 8.72 GHz에서 모든 방향(x, y, z방향)에 대하여 유효 상대 유전율이 약 -0.6, 유효 상대 투자율이 약 -1.5, 그리고 굴절율이 -0.95인 3D 등방성 bulk가 설계되었다. 계산된 Brillouin 분산 다이어그램도 제안된 구조가 등방성에 유사하다는 것을 보여주었다.

Effect of Valence Electron Concentration on Elastic Properties of 4d Transition Metal Carbides MC (M = Y, Zr, Nb, and Rh)

  • Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
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    • 제34권7호
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    • pp.2171-2175
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    • 2013
  • The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

실제적 구조를 가진 벌크 및 SOI FinFET에서 발생하는 동적 self-heating 효과 (Dynamic Self-Heating Effects of Bulk and SOI FinFET with Realistic Device Structure)

  • 유희상;정하연;양지운
    • 전자공학회논문지
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    • 제52권10호
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    • pp.64-69
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    • 2015
  • 본 연구에서는 실제적 구조를 가지는 bulk와 SOI FinFET에서의 self-heating 효과를 3차원 TCAD 전산모사를 통하여 분석하였다. 기존 연구들에서와 마찬가지로 self-heating 효과에 의해 나타나는 정적인 구동전류의 감소는 SOI FinFET에서 bulk FinFET보다 더 심각함을 보여주고 있다.. 그러나 고속의 logic 동작 및 실제적 구조를 감안하면 SOI FinFET에서의 동적 self-heating 효과는 bulk FinFET과 큰 차이가 없음을 강조한다.

The First-principles Calculations on the Half-metallic Properties of (001) and (110) Surfaces of Zinc-blende YC

  • Bialek, Beata;Lee, Jae Il
    • Journal of Magnetics
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    • 제20권1호
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    • pp.1-7
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    • 2015
  • We investigated the half-metallicity and magnetism at the (001) and (110) surfaces of YC in zinc-blende structure by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. From the calculated local density of states, we found that neither (001) nor (110) surface preserves the half-metallicity. While the magnetic moment of Y atom in the YC bulk is $0.116{\mu}_B$, it is $0.057{\mu}_B$ at the topmost layer of Y-terminated (001) surface. On the contrary, C-terminated (001) YC surface exhibits stronger magnetism than the bulk structure; the calculated magnetic moment on topmost C atom is $1.084{\mu}_B$, while that of C atom in the bulk structure is $0.423{\mu}_B$. The magnetic properties of the non-polar (110) YC surface are slightly enhanced as compared with the bulk structure.

NMR을 이용한 홍삼의 용적밀도 측정 및 내부 조직 판별 (Determination of Bulk Density and Internal Structure of Red Ginseng Root Using NMR)

  • 장기철
    • Journal of Ginseng Research
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    • 제22권2호
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    • pp.96-101
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    • 1998
  • This paper describes the determination of bulk density and the discrimination of internal structure of red ginseng by nuclear magnetic resonance (NMR). The 102 red ginseng roots were tested for bulk density. The NMR properties measured by NMR parameters such as spin-lattice relaxation time ($T_1$) and spin-spin relaxation time ($T_2$) were determined using the low field proton NMR analyzer. Bulk density of red ginseng root showed a highly negative significant correlation (r=-0.8934) with the value of $T_1$, but a highly positive significant correlation (r=0.7672 and 0.5909) with the value of T21 (short T2) and T22 (long T2), respectively. Multiple regression equation, Y=-0.0069.$T_1$+0.3044.$T_{21}$-0.0156.$T_{22}$-0.6368, using the MNR parameter values of 80 red ginseng roots can effectively predict the bulk density of 22 red ginseng roots with the correlation coefficient of 0.9396 and the standard error of 0.086. The differences in the internal structure of normal and inside white part of red ginseng were easily found by the signal intensity of NMR image based on magnetic properties of proton nucleus.

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Bulk Carrier 피로수명 향상을 위한 형상 고찰 (Study for Fatigue Life Improvement of Bulk Carrier)

  • 윤혜림;이정호;남형주;신성광
    • 대한조선학회 특별논문집
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    • 대한조선학회 2009년도 특별논문집
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    • pp.87-92
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    • 2009
  • CSR for bulk carrier has been required 25 years operation life in North Atlantic condition. As the fatigue life requirement of ship structure is increased it is necessary to study to satisfy the fatigue life which is much severe. Therefore from the fatigue analysis, especially fatigue strength for double bottom & lower stool connection area is not enough. To satisfy the fatigue life, it needs to increase double bottom strength or insert thicker plate. In this study, the consideration though structure modification have been doe with 81K bulk carrier and to find the solution of fatigue problem.

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CSR Bulk Carrier의 E/R Stringer Deck 구조 강도 계산 (E/R Stringer Deck Strength Calculation of CSR Bulk Carrier)

  • 최성빈;박동근;김경래
    • 대한조선학회 특별논문집
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    • 대한조선학회 2011년도 특별논문집
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    • pp.47-50
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    • 2011
  • E/R bulkhead is watertight bulkhead between engine room and cargo hold. So, it must have sufficient strength about cargo load of aft hold. Especially, partial stringer deck between tank top and $2^{nd}$ deck of engine room must have sufficient strength because it has function of primary supporting member. Generally, cargo hold structure is verified through the direct calculation as finite element analysis of cargo hold, but engine room structure doesn't perform it. Therefore, we have performed finite element analysis of engine room stringer deck which considered cargo hold load. And then, it will be able to apply similar ship design.

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Analysis of Bulk Concentration on Double-Layer Structure for Electrochemical Capacitors

  • Khaing, Khaing Nee Nee;Hla, Tin Tin
    • 한국재료학회지
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    • 제32권7호
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    • pp.313-319
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    • 2022
  • Double-layer capacitors (DLCs) are developed with high surface electrodes to achieve a high capacitance value. In the present work, the initial bulk concentration of 1 mol/m3 and 3 mol /m3 are selected to show the consequential effects on the performance of a double-layer capacitor. A 1D model of COMSOL Multiphysics has been developed to analyze the electric field and potential in cell voltage, the electric displacement field and polarization induced by the field, and energy density in a double-layer structure. The electrostatics and the electric circuit modes in COMSOL are used to simulate the electrochemical processes in the double-layer structure. The analytical analysis of a double-layer capacitor with different initial bulk concentrations is investigated by using Poisson-Nernst-Plank equations. From the simulation results, the differential capacitance changes as a function of compact layer thickness and initial bulk concentration. The energy density varies with the differential capacitance and voltage window. The values of energy density are dominated by the interaction of ions in the solution and electrode surface.