• Journal of the Korea Institute of Building Construction
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• v.10 no.1
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• pp.199-212
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• 2010

To establish an infrastructure for technology and information in the domestic construction industry, several construction regulations pertaining to construction information have been institutionalized. However, there are major problems with the domestic information classification system, earned value management (EVM) and project management information system (PMIS). In particular, the functions of the current PMIS have consisted of a builder-oriented system, and as EVM is not applied to PMIS, the functions of reporting, analysis and forecast for owners are lacking. Moreover, owners cannot confirm information on construction schedule and cost in real time due to the differences between the EVM and PMIS operation systems. The purpose of this study is to provide a framework that is capable of operating PMIS efficiently under an e-business environment, by providing a proposal on how to establish a work breakdown structure (WBS) and an EVM - PMIS integration model, so that PMIS may provide the function of EVM, and stakeholders may have all information in common. At the core of EVM - PMIS integration is the idea that EVM and PMIS have the same operation system, in order to be an activity-based system. The principle of the integration is data integration, in which the information field of an activity is connected with the field of a relational database table consisting of sub-modules for the schedule and cost management function of PMIS using a relational database management system. Therefore, the planned value (PV), cost value (CV), actual cost (AC), schedule variance (SV), schedule performance index (SPI), cost variance (CV) and cost performance index (CPI) of an activity are connected with the field of the relational database table for the schedule and cost sub-modules of PMIS.

• Journal of the Economic Geographical Society of Korea
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• v.17 no.2
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• pp.280-295
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• 2014

This paper analyzes the topological structure of housing market networks with an application of minimal spanning tree method into apartment sales markets in the Capital Region over the period 2003.7-2014.3. The characteristics of topological network structure gained from this application to some extent share with those found in equity markets, although there are some differences in their intensities and degrees, involving a hierarchical structure in networks, an existence of communities or modules in networks, a contagious diffusion of log-return rate across nodes over time, an existence of correlation breakdown due to the time-dependent structure of networks and so on. These findings could be partially attributed to the facts that apartments as a quasi-financial asset have been strongly overwhelmed by speculative motives over the period investigated and they can be regarded as a housing commodity with the highest level of liquidity in Korea.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.6-11
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different GPNS(Gate to Primary $N^+$ Diffusion Space) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device with FPW(Full P-Well) structure and non-CPS(Counter Pocket Source) implant shows typical SCR-like characteristics with low on-resistance(Ron), low snapback holding voltage(Vh) and low thermal breakdown voltage(Vtb), which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW(Partial P-Well) structure and optimal CPS implant demonstrate the improved ESD protection performance as a function of GPNS variation. GPNS was a important parameter, which is satisfied design window of ESD protection device.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.235-240
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• 2014

Nanocomposites made of linear low density polyethylene (LLDPE) and organo-modified montmorillonite (O-MMT) were processed by melt compounding from a commercially available premixed LLDPE/nanoclay masterbatch, at different nanoclay loadings, by co-rotating twin-screw extruder. The morphological and dielectric properties of LLDPE/O-MMT nanocomposites were investigated to understand the structure-dielectric properties relationship in the nanocomposites. The microstructures of the materials were characterized by wide angle X-ray diffraction (WAXD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Initial findings by FTIR spectroscopy characterization indicated the absence of any chemical interaction between LLDPE and nanoclay during the extrusion process, while DSC showed that a 1% wt loading of nanoclay particles increased the degree of crystallinity of the nanocomposites samples. On the other hand, XRD, SEM, TEM and AFM indicated that nanoclay layers were intercalated or exfoliated in the LLDPE matrix. A correlation between the structure and dielectric properties of LLDPE/O-MMT nanocomposites was found and discussed.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.355-358
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• 2004

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• Food Science and Biotechnology
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• v.16 no.5
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• pp.832-835
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• 2007

Moisture content of normal, waxy, and high amylose com starches was adjusted to 10-35%, and irradiated in a microwave oven. The effect of microwave irradiation on the crystalline structure of starch was measured by using a differential scanning calorimetry (DSC), and X-ray diffractometry. Pasting viscosity profile was also determined by using a rapid viscoanalyzer (RVA). For all the 3 types of starches tested, the rate of temperature increase by the microwave irradiation was faster and more rapidly reached the maximum temperature of the pressure bomb ($120^{\circ}C$) when the moisture content was higher. X-ray diffraction and DSC data revealed that the microwave irradiated starch underwent partial disruption of crystalline structure. RVA studies showed that the irradiation caused significant reductions in maximal viscosity and breakdown, whereas pasting temperature was increased. Overall trends revealed that the microwave irradiation on the starch containing limited moisture content (less than 35%) provided the effects similar to the heat moisture treatment. These effects became more significant when the moisture content was higher. Compared to waxy com starch, normal, and high amylose com starches appeared to be more susceptible to the microwave irradiation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.25-34
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• 1981

Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.