• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.77-84
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• 2018

As the application of BIM (Building Information Modeling) to the civil sector has become practical, and mandatory for road projects, the standardization, development of systems, etc. for the application and operation of BIM are required. In particular, it is important to develop BIM data standards for producing, sharing and managing the lifecycle data of civil facilities because they are commonly national public facilities. The BIM data standards have been developed by utilizing or extending IFC (Industry Foundation Classes), which is an international standard, but schema extensions of river facilities has not been developed thus far. This study proposes an approach to an IFC extension for river facilities using the WBS (Work Breakdown Structure) as a fundamental study for IFC-based schema extension in the river field. For this purpose, the research was carried out as follows. First, the IFC extension development method was selected to represent the river facilities by analyzing the existing IFC structure and previous research cases for the IFC extension. Second, extended elements of the river facilities were identified through an analysis of the WBS and classified according to the high-level structure of the IFC schema. Third, the classified elements were arranged based on the IFC hierarchy and the IFC schema extension for river facilities was established. Based on the suggested extension method of IFC schema, this study developed the schema by defining the element components and parts of river facilities, such as distribution flow elements and deriving their detailed types and properties.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.1
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.205-210
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• 2003

A 3-Transistor cell CMOS OTP ROM array using standard CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high voltage (HV) blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option as a high density OTP ROM array for modern digital as well as analog circuits.

• Journal of the Korea Institute of Building Construction
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• v.9 no.4
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• pp.147-155
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• 2009

Recently, the scale and technical complexity of agricultural production has been growing. Therefore, agricultural facilities are being gradually diversified, expanded, and made more complex. To furnish Korea's agricultural industry with international competitiveness, it is thus necessary to introduce new management techniques. The PCM (procurement-construction-maintenance) information management system for agricultural facilities is established by setting up its WBS (work breakdown structure). In this study, the WBS of a facility such as facility, space, element, works, and resources is analyzed. Following this analysts, a WBS of an agricultural facility that is appropriate for the PCM information system of an agricultural facility, is proposed by deriving it from actual WBS.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.467-468
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• 2009

• ETRI Journal
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• v.36 no.5
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• pp.829-834
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• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.7
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• pp.980-986
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• 2013

In this paper, the discharge characteristics of ac-type cylindrical discharge devices with diameters (D) in the $50{\sim}400{\mu}m$ range have been investigated numerically. The cylindrical devices have much lower breakdown voltages compared to the coplanar electrode structures. The breakdown voltage of the cylindrical structures increases with the decrease of diameters in $50{\sim}100{\mu}m$ range. In $100{\sim}200{\mu}m$ range, however, the breakdown voltage decreases slightly with the decrease of diameters. Also, as the diameter gets smaller, the electron heating efficiency is greatly improved.

• Journal of IKEEE
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• v.17 no.3
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1503-1506
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/EPDM laminates in cable joint. In this paper, we instituted the interface of normal and degassed XLPE/EPDM and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction and breakdown strength was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And micro voids and surface roughness also influenced the conduction current and breakdown strength.