• 제목/요약/키워드: boron addition

검색결과 199건 처리시간 0.027초

플라즈마 화학증착법으로 제조된 수소화된 비정질 탄화실리콘 박막의 물성에 대한 붕소의 도핑효과 (Effect of boron doping on the chemical and physical properties of hydrogenated amorphous silicon carbide thin films prepared by PECVD)

  • 김현철;이재신
    • 한국진공학회지
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    • 제10권1호
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    • pp.104-111
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    • 2001
  • $SiH_4$, $CH_4$, $B_2H_6$ 혼합기체를 이용하여 플라즈마 화학증착법으로 비정질 탄화실리콘(a-SiC:H) 박막을 증착하였다. 기상 doping 농도를 0에서 $2.5\times10^{-2}$ 범위에서 변화시켜 얻은 박막의 물성을 SEM, XRD, Raman 분광법, FTIR, SIMS, 광흡수도와 전기전도도 분석을 통하여 살펴보았다. $B_2H_6$/($CH_4+SiH_4$) 기체유량비가 증가할수록 붕소의 도핑효율와 미세결정성은 감소하였다. 증착 중 $B_2H_6$ 기체가 첨가됨에 따라 비정질 탄화실리콘 박막의 Si-C-H 결합기의 강도는 감소하였으며, 이의 영향으로 박막내의 수소함량은 $B_2H_6/(SiH_4+CH_4$) 기체 유량비가 증가함에 따라 16.5%에서 7.5%로 단조감소하였다. $B_2H_6(CH_4+SiH_4$) 기체유량비가 증가할수록 a-SiC:H 박막의 광학적 밴드갭과 전기활성화 에너지는 감소하였고, 전기전도도는 증가하였다.

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$C_4H_6O_5$ 도핑된 $MgB_2/Fe$ 선재의 임계특성에 대한 열처리 온도의 영향 (Influence of the Heat-treatment Temperature on the Critical Properties of $C_4H_6O_5$-doped $MgB_2/Fe$ Wire)

  • 전병혁;김정호;;김찬중
    • Progress in Superconductivity
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    • 제9권1호
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    • pp.62-67
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    • 2007
  • The effects of the heat-treatment temperature on the carbon (C) substitution amount, full width at half maximum (FWHM) value, critical temperature ($T_c$), critical current density ($J_c$) have been investigated for 10 wt % malic acid ($C_4H_6O_5$)-doped $MgB_2/Fe$ wires. All the samples were fabricated by the in-situ powder-in-tube (PIT) method and heat-treated within a temperature range of $650^{\circ}C$ to $1000^{\circ}C$. As the heat-treatment temperature increased, it seemed that the lattice distortion was increased by a more active C substitution into the boron sites from the malic acid addition. These increased electron scattering defects seemed to enhance the $J_c-H$ properties in spite of an improvement in the crystallinity, such as a decrease of the FWHM value and an increase of the $T_c$. Compared to the un-doped wire heat-treated at $650^{\circ}C$ for 30 min, the $J_c$ was enhanced by the C doping in a high-field regime. The wire heat-treated at $900^{\circ}C$ resulted in a higher magnetic $J_c$ of approximately $10^4\;A/cm^2$ at 5 K and 8 T.

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텅스텐 실리사이드 듀얼 폴리게이트 구조에서 CMOS 트랜지스터에 미치는 플로린 효과 (Fluorine Effects on CMOS Transistors in WSix-Dual Poly Gate Structure)

  • 최득성;정승현;최강식
    • 전자공학회논문지
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    • 제51권3호
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    • pp.177-184
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    • 2014
  • 화학기상증착의 텅스텐 실리사이드 듀얼 폴리 게이트 구조에서 플로린이 게이트 산화막에 미치는 영향을 전기적 물리적 측정 방법을 사용하여 연구하였다. 플로린을 많이 함유한 텅스텐 실리사이드 NMOS 트랜지스터에서 채널길이가 감소함에 따라 게이트 산화막 두께는 감소하여 트랜지스터의 롤업(roll-off) 특성이 심화된다. 이는 게이트 재 산화막 열처리 공정에 의해 수직방향으로의 플로린 확산과 더불어 수평방향인 게이트 측면 산화막으로의 플로린 확산에 기인한다. 채널길이가 짧아질수록 플로린의 측면방향 확산거리가 작아져 수평방향 플로린 확산이 증가하고 그 결과 게이트 산화막의 두께는 감소하게 된다. 반면에 PMOS 트랜지스터에서는 P형 폴리를 만들기 위한 높은 농도의 붕소가 플로린의 게이트 산화막으로의 확산을 억제하여 채널길이에 따른 산화막 두께 변화 특성이 보이지 않는다.

Effects of the applications of excessive irrigation water and acetaldehyde on Chinese yam tubers at byobusan area of Aomori prefecture in Japan

  • Kawasaki, Michio;Keimatsu, Ryo;Endo, Akira
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2017년도 9th Asian Crop Science Association conference
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    • pp.247-247
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    • 2017
  • Byobusan area of Aomori prefecture in Japan was a marshy sand dune and had developed for agricultural land use with a large-scale sprinkler system. Recently, it becomes an agricultural problem at this area that distinctive damage with browning maculation and fissures frequently occurs in Chinese yam tubers. Acetaldehyde is one of the factor candidates of underground part damage in plants. In this study, incidence rate of the tuber damage, and the morphological character and elemental composition of the damage parts in tubers were investigated with applications of excessive irrigation water or acetaldehyde water solution into the yam field. The incidence rate of the distinctive tuber damage increased as the input amount of irrigation water was increased. At the browning maculation parts of the tubers, many fissures and damages of cork layer were observed under scanning electron microscopy. In addition, the periderm of tubers was significantly thicker in damaged parts than in non-damaged parts. Funguses, bacterium and nematodes were not observed in the damaged part under scanning electron microscopy. The weight ratio of each constituent element in an analyzed area relative to the total weight of major essential elements was measured with energy dispersive X-ray spectrometry. The results showed that the weight ratios of boron, carbon, phosphorus, sulfur and calcium were higher in damaged parts than in non-damaged parts whereas the weight ratios of oxygen and chlorine were lower in damaged parts than in non-damaged parts. It was also shown by this spectrometry that iron, cadmium, lead and zinc were not directly involved in occurrence of the tuber damage. In this study, there was no remarkable difference of tuber appearance between non-acetaldehyde and acetaldehyde application treatments. From the above results, it is shown that the damage would be a physiological disorder induced by the input of a large quantity of water in the sandy field.

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On-line Generation of Three-Dimensional Core Power Distribution Using Incore Detector Signals to Monitor Safety Limits

  • Jang, Jin-Wook;Lee, Ki-Bog;Na, Man-Gyun;Lee, Yoon-Joon
    • Nuclear Engineering and Technology
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    • 제36권6호
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    • pp.528-539
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    • 2004
  • It is essential in commercial reactors that the safety limits imposed on the fuel pellets and fuel clad barriers, such as the linear power density (LPD) and the departure from nucleate boiling ratio (DNBR), are not violated during reactor operations. In order to accurately monitor the safety limits of current reactor states, a detailed three-dimensional (3D) core power distribution should be estimated from the in-core detector signals. In this paper, we propose a calculation methodology for detailed 3D core power distribution, using in-core detector signals and core monitoring constants such as the 3D Coupling Coefficients (3DCC), node power fraction, and pin-to-node factors. Also, the calculation method for several core safety parameters is introduced. The core monitoring constants for the real core state are promptly provided by the core design code and on-line MASTER (Multi-purpose Analyzer for Static and Transient Effects of Reactors), coupled with the core monitoring program. through the plant computer, core state variables, which include reactor thermal power, control rod bank position, boron concentration, inlet moderator temperature, and flow rate, are supplied as input data for MASTER. MASTER performs the core calculation based on the neutron balance equation and generates several core monitoring constants corresponding to the real core state in addition to the expected core power distribution. The accuracy of the developed method is verified through a comparison with the current CECOR method. Because in all the verification calculation cases the proposed method shows a more conservative value than the best estimated value and a less conservative one than the current CECOR and COLSS methods, it is also confirmed that this method secures a greater operating margin through the simulation of the YGN-3 Cycle-1 core from the viewpoint of the power peaking factor for the LPD and the pseudo hot pin axial power distribution for the DNBR calculation.

Plasma source ion implantations for shallow $p^+$/n junction

  • Jeonghee Cho;Seuunghee Han;Lee, Yeonhee;Kim, Lk-Kyung;Kim, Gon-Ho;Kim, Young-Woo;Hyuneui Lim;Moojin Suh
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.180-180
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    • 2000
  • Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

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New Transition Metal Mediated Alkylation Reaction of arachno-$S_{2}B_{7}H_{8}$, Insertion Reaction of arachno-$S_{2}B_{7}H_{8}^{-}$ with $(CO)_{5}M$ {${C(R_{1})(R_{2})}$} $(M=Cr,\;W;\;R_{1}=CH_{3},\;C_{6}H_{5};\;R_{2}=OCH_{3},\;SC_{6}H{5})$: Synthesis and Characterization of arachno-$4-RCH_{2}-6,8-S_{2}B_{7}H_{8}\;(R=CH_{3},\;IIa;\;C_{6}H_{5},\;IIb)$

  • Hee-Joo Jeon;Jae-Jung Ko;Kang-bong Lee;Sang Ook Kang
    • Bulletin of the Korean Chemical Society
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    • 제14권1호
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    • pp.113-117
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    • 1993
  • Good yield synthetic routes for the production of new B-alkyl-dithiaborane clusters are reported. The syntheses of the B-alkyl-dithiaboranes are based on the use of Fischer-type carbene reagents to activate the B-H bonds of dithiaborane for alkyl-addition reactions and are the first examples of transition-mediated reactions of dithiaborane to be reported. Thus, reactions employing arachno-$S_2B_7H_8$- and $(CO)_5M{C(R_1)R_2}$ (M = Cr, W; $R_1 = CH_3,\;C_6H_5;\; R_2 = OCH_3,\;SC_6H_5)$ were found to yield the intermidiate anions I, $[(CO)_5M{C(R_1)R_2S_2B_7H_8}]^-$, which upon protonation gave the corresponding neutral, air-sensitive cluster arachno-4-$RCH_2-6,8-S_2B_7H_8(R=CH_3,\;IIa;\;C_6H_5,\;IIb)$ range from 30 to 35% yield. Complexes IIa and IIb are isoelectronic with arachno-6,8-$S_2B_7H_9$ and, on the basis of the spectroscopic data, are proposed to adopt a similar arachno cage geometry in which an $RCH_2$ units are substituted to 4 position boron atom of the arachno-6,8-$S_2B_7H_9$.

경량 연자성 소재의 군 시설물 적용 시 방사선 차폐효과 분석 (Analysis of Radiation Shielding Effect of Soft Magnetic Material applied to Military Facility)

  • 이상규;이상민;최경준;이병학
    • 한국방사선학회논문지
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    • 제15권2호
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    • pp.191-199
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    • 2021
  • 본 연구의 목적은 경량 연자성 소재의 방사선 차폐 효과를 분석하여 군사시설에 대한 적용 가능성을 확인하는 것이다. 연자성 물질은 EMP 차폐에 효과적인 것으로 알려져 있다. 이 물질이 방사선 차폐에도 효과적이라면 군 방호에 효과적으로 적용이 가능할 것으로 예상된다. 이에 본 연구에서는 감마선 차폐 효과를 확인하기 위해 Cs-137 및 Co-60 선원을 사용하여 실험을 수행하였으며, 중성자 차폐 효과를 평가하기 위해 Monte Carlo N-Particle (MCNP) 모델링을 적용하였다. 그 결과 연자성 소재의 두께가 증가함에 따라 감마선과 중성자의 선형 감쇠 법칙에 의한 차폐성능이 향상됨을 확인할 수 있었다. 따라서 연자성 소재를 군사용 구조물 등에 적용할 경우에 방사선 차폐에 효과적이라는 것을 확인하였다.

B와 W의 함량이 무전해 Co 합금 박막의 경도에 미치는 영향 연구 (Effect of B and W Contents on Hardness of Electroless Co Alloy Thin Films)

  • 임태호;김재정
    • Korean Chemical Engineering Research
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    • 제56권6호
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    • pp.895-900
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    • 2018
  • 본 연구에서는 Co-B, Co-W-B 합금 박막 형성을 위한 무전해 전착법을 고안하고, 이를 통해 형성한 합금 박막의 B과 W의 함량이 박막의 경도에 미치는 영향을 살펴보았다. 무전해 전착을 통해 무정형 상태의 Co 합금 박막을 성공적으로 형성할 수 있었으며, 환원제인 dimethylamine borane과 W의 원료인 sodium tungstate dihydrate의 농도를 조절함으로써 Co 합금 박막 내 혼합되는 B과 W의 함량을 조절하였다. 이를 통해 Co 합금 박막 내 전위(dislocation)의 전파(propagation)를 억제하는 B과 W의 함량이 증가할수록 박막의 경도가 증가함을 확인할 수 있었다. 뿐만 아니라, 무전해 전착 시 포기(aeration)를 수행하지 않을 경우에 포기를 수행한 경우보다 Co 합금 박막 내 B과 W의 함량을 대폭 증가시킬 수 있었고 최종적으로 Co-W-B 합금 박막의 경도를 8.9 (${\pm}0.3$) GPa까지 향상시켰다.

Superconducting properties of MgB2 superconductors in-situ processed using various boron powder mixtures

  • Kang, M.O.;Joo, J.;Jun, B.H.;Kim, C.J.
    • 한국초전도ㆍ저온공학회논문지
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    • 제23권3호
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    • pp.45-50
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    • 2021
  • In this study, the effect of the size of B powder on the critical current density (Jc) of MgB2 prepared by an in situ reaction process was investigated. Various combinations of B powders were made using a micron B, ball-milled B and nano B powders. Micron B powder was reduced by ball milling and the milled B powder was mixed with the micron B or nano B powder. The mixing ratios of the milled B and micron or nano B were 100:0, 50:50 and 0:100. Non-milled micron B powder was also mixed with nano powder in the same ratios. Pellets of (2B+Mg) prepared with various B mixing ratios were heat-treated to form MgB2. Tc of MgB2 decreased slightly when the milled B was used, whereas the Jc of MgB2 increased with increasing amount of the milled B or the nano powder. The used of the milled B and nano B power promoted the formation MgB2 during heat treatment. In addition to the enhanced formation of MgB2, the use of the powders reduced the grain size of MgB2. The use of the milled and nano B powder increased the Jc of MgB2. The highest Jc was achieved when 100% nano B powder was used. The Jc enhancement is attributed to the high volume fraction of the superconducting phase (MgB2) and the large grain boundaries, which induces the flux pinning at the magnetic fields.