• 한국레이저가공학회:학술대회논문집
• /
• 한국레이저가공학회 2006년도 추계학술발표대회 논문집
• /
• pp.53-81
• /
• 2006

A COG(Chip on Glass) bonding process that is one of display packaging technology and bonds between driver IC chip and a glass panel using ACF(Anisotropic Conductive Film)has been investigated by using diode laser. This method is possible to raise cure temperature of ACF within one second and can reduce the total process time for COG bonding by a conventional method such as a hot plate. Also we can get good pressure mark on the surface of electrodes and higher bonding strength than that by convention method. Results show that laser COG bonding can give low pressure bonding and decrease a warpage of panel. We believe that it can be applied to fine pitch module.

• Journal of Welding and Joining
• /
• 제15권6호
• /
• pp.32-40
• /
• 1997

Solid state diffusion bonding is the joining process performed by creep and diffusion, which is accelerated by heating below melting temperature and proper pressing, in vacuum or shielding gas atmosphere. By this process we can obtain sufficient joint which can't be expected from the fusion welding. For Ti-6Al-4V alloy, the optimum solid state diffusion bonding condition and mechanical properties of the joint were found, and micro void morphology at bond interface was observed by SEM. The results of tensile test showed sufficient joint, whose mechanical properties are similar to that of base metal. 850$^{\circ}$C, 3MPa is considered as the optimum bonding condition. Void morphology at interface is long and flat at the initial stage. As the percentage of bonded area increases, however, small and round voids are found. Variation of void shape can be explained as follows. As for the void shrinkage mechanism, at the initial stage, power law creep is the dominant, but diffusion mechanism is dominant when the percentage of bonded area is increased.

• 한국전기전자재료학회논문지
• /
• 제23권9호
• /
• pp.718-723
• /
• 2010

In this paper, the following results were obtained from the experiment in which electrification voltage of silicone rubber specimen for thermal bonding were measured under various time, temperature ($10{\sim}40^{\circ}C$), and humidity (30~90%) conditions and different amount of carbon additives (0~15 phr (per hundred resin)). Electrostatics electrification voltage decreased when carbon is up to 10 phr, and there was no electrification voltage in 15 phr condition. The electrostatics electrification voltage did not change over time. When the temperature was constant, electrostatics electrification voltage sharply dropped when the humidity was around 70%. That means, this condition might be appropriate for prevention of charging. The electrification voltage decreased as humidity and amount of carbon increased.

• Applied Science and Convergence Technology
• /
• 제26권3호
• /
• pp.43-46
• /
• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• 한국세라믹학회지
• /
• 제35권6호
• /
• pp.535-542
• /
• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• 산업경영시스템학회지
• /
• 제33권2호
• /
• pp.39-47
• /
• 2010

Bonding glasses is one of the important PDP (Plasma Panel Display) manufacturing processes. Bonding process includes aligning front and rear glasses with fixing clips. In this process, clips have to maintain perfect alignment between the front and rear glasses. The panel which is fixed by clips goes to next process called sealing. The sealing process is performed in high temperature ($465^{\circ}C$). During sealing process, alignment is very important because it can affect seriously on the PDP screen quality. This study suggests redesigned clips to improve PDP panel alignment and also shows stabilization of clips in a high temperature during sealing process.

• 한국세라믹학회지
• /
• 제31권4호
• /
• pp.381-388
• /
• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2013년도 춘계학술대회 논문집
• /
• pp.1329-1330
• /
• 2013

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2011년도 춘계학술대회 논문집
• /
• pp.733-734
• /
• 2011

• 한국산학기술학회논문지
• /
• 제14권2호
• /
• pp.567-572
• /
• 2013

냉난방을 사용하는 가정에서는 대부분 창문을 통해 열손실이 이루어지고 있는데 이를 방지하기 위해 Low-E 유리, 복층유리 또는 진공유리가 사용되고 있다. 본 논문에서는 진공유리 제작공정의 최종공정인 봉지공정에 대한 연구가 수행되었는데 기존 상압 접합이 아닌 진공챔버 내 접합이 고려되었다. 봉지과정의 효율성을 위해 진공챔버 내에서 히터온도에 따른 프리트 용융온도 및 접합시간을 최적화하였고 열응력으로 인한 유리 파손을 방지하기 위해 유리 예열온도를 최적화하였다. 이러한 결과를 바탕으로 성공적으로 진공유리를 제작하였고 측정된 열관류율은 약 $5.7W/m^2K$로 진공유리 내부압력은 약 $10^{-2}$ torr로 판명되었다.