• Title/Summary/Keyword: bonding surface

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Direct bonding of Si(100)/Si$_3$N$_4$∥Si (100) wafers using fast linear annealing method (선형열처리를 이용한 Si(100)/Si$_3$N$_4$∥Si (100) 기판쌍의 직접접합)

  • Lee, Young-Min;Song, Oh-Song;Lee, Sang-Hyun
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.427-430
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    • 2001
  • We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.

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Effects of contamination by either blood or a hemostatic agent on the shear bond strength of orthodontic buttons

  • Gungor, Ahmet Yalcin;Alkis, Huseyin;Turkkahraman, Hakan
    • The korean journal of orthodontics
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    • v.43 no.2
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    • pp.96-100
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    • 2013
  • Objective: To evaluate the effects of contamination by either blood or a hemostatic agent on the shear bond strength (SBS) of orthodontic buttons. Methods: We used 45 freshly extracted, non-carious, impacted third molars that were divided into 3 groups of 15. Each tooth was etched with 37% phosphoric acid gel for 30 s. Human blood or the blood stopper agent was applied to the tooth surface in groups I and II, respectively. Group III teeth were untreated (controls). Orthodontic buttons were bonded to the teeth using light-curing composite resin. After bonding, the SBS of the button was determined using a Universal testing machine. Any adhesive remaining after debonding was assessed and scored according to the modified adhesive remnant index (ARI). ANOVA with post-hoc Tukey's test was used to determine significant differences in SBS and Fisher's exact test, to determine significant differences in ARI scores among groups. Results: ANOVA indicated a significant difference between groups (p < 0.001). The highest SBS values were measured in group III ($10.73{\pm}0.96$ MPa). The SBS values for teeth in groups I and II were significantly lower than that of group III (p < 0.001). The lowest SBS values were observed in group I teeth ($4.17{\pm}1.11$ MPa) (p < 0.001). Conclusions: Contamination of tooth surfaces with either blood or hemostatic agent significantly decreased the SBS of orthodontic buttons. When the contamination risk is high, it is recommended to use the blood stopper agent when bonding orthodontic buttons on impacted teeth.

Optimal Condition of Hydroxyapatite Powder Plasma Spray on Ti6Al4V Alloy for Implant Applications

  • Ahn, Hyo-Sok;Lee, Yong-Keun
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.211-214
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    • 2012
  • Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.

Microstructural Evolution Analysis in Thickness Direction of An Oxygen Free Copper Processed by Accumulative Roll-Bonding Using EBSD Measurement (EBSD측정에 의한 반복겹침접합압연된 무산소동의 두께방향으로의 미세조직 변화 분석)

  • Lee, Seong-Hee;Lim, Cha-Yong
    • Korean Journal of Materials Research
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    • v.24 no.11
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    • pp.585-590
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    • 2014
  • Microstructural evolution in the thickness direction of an oxygen free copper processed by accumulative rollbonding (ARB) is investigated by electron back scatter diffraction (EBSD) measurement. For the ARB, two copper alloy sheets 1 mm thick, 30 mm wide and 300 mm long are first degreased and wire-brushed for sound bonding. The sheets are then stacked and roll-bonded by about 50% reduction rolling without lubrication at an ambient temperature. The bonded sheet is then cut to the two pieces of the same dimensions and the same procedure was repeated on the sheets up to eight cycles. The specimen after 1 cycle showed inhomogeneous microstructure in the thickness direction so that the grains near the surface were finer than those near the center. This inhomogeneity decreased with an increasing number of ARB cycles, and the grain sizes of the specimens after 3 cycles were almost identical. In addition, the aspect ratio of the grains decreased with an increasing number of ARB cycles due to the subdivision of the grains by shear deformation. The fraction of grains with high angle grain boundaries also increased with continuing process of the ARB so that it was higher than that of the low angle grain boundaries in specimens after 3 cycles. A discontinuous dynamic recrystallization occurred partially in specimens after 5 cycles.

The Study on Fine-Pitch Pattern Formation Using epoxy bonding film Surface modification and Semi-additive Method (Epoxy Bonding Film 표면 개질과 도금공정을 이용한 미세패턴형성에 관한 연구)

  • Kim, Wan-Joong;Park, Se-Hoon;Jung, Yeon-Kyung;Lee, Woo-Sung;Park, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.165-165
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    • 2009
  • 현재 반도체나 이동통신 분야는 사용자의 요구에 따라 PCB의 회로선폭이 갈수록 좁아지고 있다. 이러한 정밀 부품을 제조하기 위한 제조공정에서 각광받기 시작한 기술 중 하나가 대기압 플라즈마 기술이다. 본 연구에서는 미세패턴 형성이 가능한 에폭시 본딩 필름위에 무전해 도금공정을 통한 패턴 도금법을 이용하여 패턴을 형성하였고, 형성된 패턴에 대기압 플라즈마 처리 횟수에 따른 접촉각(Contact Angle)과 Peel Strength의 변화를 분석하였다. 또한 에폭시 본딩 필름을 이용한 Build-up공정을 거쳐 Micro Via를 형성하여 대기압 플라즈마 처리 횟수에 따른 Via 표면을 분석하였다. 대기압 플라즈마 기술은 진공식에 비해 소규모 장비를 이용한 전처리가 가능하고, 초기 설비비용을 절감하는데 탁월한 효과가 있어 널리 사용하는 기술 중 하나이다. 이 연구를 통하여 대기압 플라즈마 처리 횟수에 따른 표면에너지의 변화로 인한 접촉각이 좋아지는 것을 알 수 있으며, 대기압 플라즈마 처리를 한 패턴표면이 친수성으로 변하면서 현상된 드라이 필름 사이로 도금액이 원활히 공급되어서 미세패턴 모양이 우수하게 구현되었음을 알 수 있었다. 또한 Via Filling에도 뛰어난 효과가 있었음을 확인할 수 있었다.

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ANALYSIS OF THE EFFECT OF HYDROXYL GROUPS IN SILICON DIRECT BONDING USING FT-IR (규소 기판 접합에 있어서 FT-IR을 이용한 수산화기의 영향에 관한 해석)

  • Park, Se-Kwang;Kwon, Ki-Jin
    • Journal of Sensor Science and Technology
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    • v.3 no.2
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    • pp.74-80
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    • 1994
  • Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

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Improvement of Paper Strength using Pretreated Precipitated Calcium Carbonate (PCC) (종이의 강도향상을 위한 경질탄산칼슘(PCC) 전처리에 대한 연구)

  • Kim, Chul-Hwan;Lee, Ji-Young;Gwak, Hye-Joeng;Chung, Ho-Kyung;Back, Kyung-Kil;Lee, Hui-Jin;Kim, Sung-Ho;Kang, Ha-Ryoun
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.42 no.1
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    • pp.41-47
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    • 2010
  • Increasing ash content of the paper is one of the most effective methods for saving raw materials and steam consumption and improving optical properties and better print quality. However, the increase of filler loading or filler content using a conventional wet end system is limited due to severe loss in strength properties, affecting runnability and product quality. This is because the filler has no ability to make bonding with cellulosic fibers. Therefore, if the technology to give filler the bonding ability is developed, the ash content of the paper can be increased more than ever. This study was carried out to modify PCC by coating its surface with starch contributing to better bonding with fibers. To prepare the modified PCC, cationic starch was selected as a polymer and then pretreatment was done by mixing PCC and cationic starch. Consequently, the pretreated PCC contributed to higher tensile strength, stiffness and opacity than the conventional filler, such as GCC and untreated PCC. However, CIE whiteness and ISO brightness decreased slightly compared to conventional fillers.

Heat Dissipation Analysis of 12kV Diode by the Packaging Structure (12kV급 다이오드의 패키징 구조에 따른 방열 특성 연구)

  • Kim, Nam-Kyun;Kim, Sang-Cheol;Bahng, Wook;Song, Geun-Ho;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1092-1095
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    • 2001
  • Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

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Direct Bonding of Si || SiO2/Si3N4 || Si Wafer Pairs With a Furnace (전기로를 이용한 Si || SiO2/Si3N4 || Si 이종기판쌍의 직접접합)

  • Lee, Sang-Hyeon;Lee, Sang-Don;Seo, Tae-Yun;Song, O-Seong
    • Korean Journal of Materials Research
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    • v.12 no.2
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    • pp.117-120
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    • 2002
  • We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

Failure Mode and Strength of Unidirectional Composite Single Lap Bonded Joints I. Experiments (일방향 복합재료 Single Lap접합 조인트의 파손 모드 및 강도 I. 실험)

  • Kim Kwang-Soo;Yoo Jae-Seok;An Jae-Mo;Jang Young-Soon
    • Composites Research
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    • v.17 no.6
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    • pp.14-21
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    • 2004
  • Failure process, mode and strength of unidirectional composite single lap bonded joints were investigated experimentally with respect to bonding methods, those are, co-curing with and without adhesive and secondary bonding. The co-cured joint specimens without adhesive had the largest failure strength. Progressive failures along the adhesive layer occurred in the secondary bonded specimens. In the co-cured specimens with adhesive film which had better material strength and adhesion performance, delamination failure occurred and the joint strengths were less than those of secondary bonded specimens. Delamination failure did not occur in the secondary bonded specimens because of earlier crack growth and progressive failure in the adhesive layer. Therefore, failure strength of composite bonded Joints were not always proportionate to material strength and adhesion performance of the adhesive due to the weakness of delamination in composite materials. The effects of surface roughness, bondline thickness and fillets were also studied on secondary bonded specimens.