• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.200-200
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• 2010

열영상의 해상도 증가 시 야기되는 감도저하를 해결하고자 단위 픽셀의 크기를 줄이고 필팩터 향상을 위한 2앵커, 4앵커 구조를 제안하고 앵커 구조에서 Leg 구성물질의 두께변화에 따른 온도 변화 및 열전도도 특성을 실험을 통해 최적화 된 열영상을 구현한다.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.286-291
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• 1998

Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.27-27
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• 2013

Development of bolometer array and camera at millimeter and submillimeter wavelengths plays an important role for detecting submillimeter galaxies (SMGs) which appear to be very bright at the submillimeter and millimeter wavelengths. These SMGs, luminous infrared galaxies detected at mm/submm wavelengths seem to be progenitors of present-day massive galaxies and account for their considerable contributions to the light from the early universe and their expected high star formation rates (SFRs) if there is a close link between the SMG phenomena and the star formation activities and the interstellar dust in galaxies is mainly heated by the star light. In this talk, we review assembly of SMGs compiled with observations using the bolometer arrays and cameras and investigate their spectral energy distribution fits including the data at other wavelengths which trace the photometric properties and the red-shift distribution of galaxies. We find that these bright SMGs significantly contribute to the cosmic star formation rate density at red-shifts of 2-3 (about 8 %) for the spatial distribution of these galaxies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.373-374
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• 2007

The amorphous silicon microbolometer array has been developed by the MEMS design and fabrication technology. Before the bolometer array for the image sensor being designed, the structure of unit cel I and 16x16 array of it was simulated, designed and fabricated. The properties of bolometer have been measured as such that the TCR and thermal time constant can be achieved -2 %/K and 1.4 msec respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.452-457
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• 2014

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.299-312
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• 2006

This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from ＜ 5% to ＞ 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to ＞ 15 in above devices.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.1
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• pp.19-29
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• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.

• The Bulletin of The Korean Astronomical Society
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• v.32 no.2
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• pp.74.1-74.1
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• 2007

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.132-137
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• 2010

We present results of room-temperature characterization of lithographically manufactured antenna-coupled NbN micro-bolometers. The bolometers are assembled together with a hyper-hemispherical Si lens to couple the incident radiation to the bolometer from the back-side of the substrate. The bolometers are designed to operate at 300~1,000 GHz and they are characterized at 321~782 GHz. Radiation patterns are measured at 321 GHz, 400 GHz, 654 GHz, and at 782 GHz. The frequency dependency of the beamwidth is studied with several azimuthal beam profile measurements at 321~500 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.