• Journal of Power Electronics
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• v.8 no.1
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• pp.81-90
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• 2008

This paper presents an investigation of a voltage and frequency controller for an isolated asynchronous generator (IAG) driven. by a wind turbine and supplying 3-phase 4-wire loads to the isolated areas where a grid is not accessible. The control strategy is based on the indirect current control of the VSC (voltage source converter) using the frequency PI controller. The proposed controller consists of three single-phase IGBT (Insulated Gate Bipolar Junction Transistor) based VSC, which are connected to each phase of the IAG through three single phase transformers and a battery at their DC link. The controller has the capability of controlling reactive and active powers to regulate the magnitude and frequency of the generated voltage, harmonic elimination, load balancing and neutral current compensation. The proposed isolated system is modeled and simulated in MATLAB using Simulink and PSB (Power System Block-set) toolboxes to verify the performance of the controller.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.287-289
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• 2011

본 논문은 인피니언 테크놀로지스의 RC-IGBT (Reverse Conducting Isolated Gate Bipolar Transistor)와 SOI 드라이브 IC(Integrated Circuit)를 사용한 DIL(Dual-In-Line) 구조의 저전력 모듈인 CIPOS TM (Control Integrated POwer System) 제품을 소개한다. 이 전력 모듈은 최적의 게이트 구동회로, 트렌치 필드스톱의 RC-IGBT를 사용하여 기존의 IGBT 와 Diode를 사용하는 구조에서 최소화 된 패키지 크기를 사용하여 높은 효율을 구현할 수 있다. 본 논문을 통하여 인버터의 어플리케이션에 적합하게 설계된 전력모듈에 대한 소개와 그 특징 및 시스템 구성을 위한 고려사항에 대하여 기술하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.40-47
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• 1998

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

• Progress in Superconductivity and Cryogenics
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• v.3 no.2
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• pp.39-43
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• 2001

For several decades researches and development on superconducting magnetic energy storage(SMES) system have been done for efficient electric power management. Korea Electrotechnology Research Institute (KERI) have developed of a 1MJ , 300kVA SMES System for improving power quality in sensitive electric loads. It consists of an IGBT (Insulated Gate Bipolar Transistor) based power conversion module. NbTi mixed matrix conductor superconducting magnet and a cryostat with HTS current leads. We developed the code fro design of a SMES magnet. Which could find the parameters of the SMES magnet having minimum amount of superconductors for the same store denerby. and designed the 1 MJ SMES magnet by using it . And we have design and fabricated cryostat with kA class HTS current leads for a 1 MJ SMES System. This paper describes the design fabrication and test results for a 1MJ SMES System.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.250-255
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• 2000

본 "수소 플라즈마를 이용한 SOI 기판 제작 및 SOI 전력용 반도체 소자 제작에 관한 연구"를 통해 수소플라즈마 전처리 공정에 의한 실리콘 기판 표면의 활성화를 통해 실리콘 직접 접합 공정을 수행하여 접합된 기판쌍을 제작할 수 있었으며, 접합된 기판쌍에 대한 CMP(Chemical Mechanical Polishing) 공정을 통해 SOI(Silicon on Insulator) 기판을 제작할 수 있었다. 아울러, 소자의 동작 시뮬레이션을 통해 기존 SOI LIGBT(Lateral Insulated Gate Bipolar Transistor) 소자에 비해 동작 특성이 향상된 이중 채널 SOI LIGBT 소자의 설계 파라미터를 도출하였으며, 공정 시뮬레이션을 통해 소자 제작 공정 조건을 확립하였고, 마스크 설계 및 소자 제작을 통해 본 연구 수행으로 개발된 SOI 기판의 전력용 반도체 소자 제작에 대한 가능성을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.84-85
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• 2008

In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.1
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• pp.22-27
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• 2004

BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. In BiCMOS circuits, transistor stuck-open faults exhibit delay faults in addition to sequential behavior. In this paper, proposes a method for efficiently generating test pattern which detect stuck-open in BiCMOS circuits. In proposed method, BiCMOS circuit is divided into pull-up part and pull-down part, using structural property of BiCMOS circuit, and we generate test pattern using set theory for efficiently detecting faults which occured each divided blocks.