• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of IKEEE
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• v.19 no.2
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.86.3-86
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• 2001

Hall effect sensor using 7um, 1.7 ohm-cm or 10um, 3.5 ohm-cm Bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes to optimize offset voltage and sensitivity for proper applications. In order to measure offset voltage in chip scale the Agilent company´s 4156C and Nano-Voltage Meter were used and the best structure in offset voltage was finally selected by using ceramic package. The patterns appear to be the quadri-rectangular patterns entirely and three-parallelogram patterns. The measured offset voltages were found to be about 173-365uV. Meanwhile, in ...

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1025-1027
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• 1995

SEG(Selective Epitaxial Growth) and ELO(Epitaxial Lateral Growth) of Silicon offer new opportunities in the fabrication of MEMS(Micro Electro-Mechanical Systems) structures. SEG of silicon enables the stacking of junctions in addition to those resulting from the standard bipolar process and this properly was utilized for the fabrication of an improved-performance color sensor. When the crystalline growth takes place through the seed windows and proceeds over the dielectric, after reaching the surface, it form an ELO silicon layer and this ELO-Si can be modified into various structures for MEMS application such as cantilevers, beams, diaphragms.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.84-92
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• 2002

A $32{\times}32$ pixels foveated (linear-polar) structure retina chip with the function of local-light adaptation for edge detection has been designed and fabricated using CMOS technology. Human retina can detect a wide range of light intensity. In this study, we use the biologically-inspired visual signal processing mechanism that consists of photoreceptors, horizontal cells, and bipolar cells in order to implement the function of edge detection in the retina chip. For a local-light adaptive function, the size of receptive field is changed locally according to the input light intensity. The spatial distribution of sensing pixels in the foveated retina chip has the advantages of selective reduction of image data and good resolution in central part to carry out the elaborate image processing with still enough resolution in the outer parts. The designed chip has been fabricated using standard $0.6\;{\mu}m$ double-poly triple-metal CMOS technology and optimized using HSPICE simulator.