• Journal of Sensor Science and Technology
• /
• v.13 no.3
• /
• pp.188-194
• /
• 2004

With a remarkable advance in CMOS (complimentary metal-oxide-semiconductor) process technology, a variety of vision sensors with signal processing circuits for complicated functions are actively being developed. Especially, as the principles of signal processing in human retina have been revealed, a series of vision chips imitating human retina have been reported. Human retina is able to detect the edge and motion of an object effectively. The edge detection among the several functions of the retina is accomplished by the cells called photoreceptor, horizontal cell and bipolar cell. We designed a CMOS vision chip by modeling cells of the retina as hardwares involved in edge and motion detection. The designed vision chip was fabricated using $0.6{\mu}m$ CMOS process and the characteristics were measured. Having reliable output characteristics, this chip can be used at the input stage for many applications, like targe tracking system, fingerprint recognition system, human-friendly robot system and etc.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.3
• /
• pp.8-13
• /
• 1989

The parameters of bipolar random square-wave signal process, amplitude and phase with unknown probability distribution are shown to be simultaneously estimated by using Gauss-Markov estimator so that transmitted digital data can be recovered under the additive Gaussinan noise environment. However, we see that the preprocessing stage using the correlator composed of the multiplier and the running integrator is needed to convert the received process into the sampled sequences and to obtain the observed data vectors, which can be used for Gauss-Markov estimation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.208-211
• /
• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.495-499
• /
• 2020

Power factor improvement at high temperatures has been a major research topic for the development of skutterudite thermoelectric materials. Here, we attempted to optimize the process parameters for manufacturing skutterudite materials, especially for p-type systems. We focused on the effect of aging time variation to maximize the high-temperature performance of the Ce-filled Fe³CoSb¹² skutterudite system. The optimized aging time was concluded to be a key parameter for the formation of single-phase nanostructures in this p-type skutterudite system. The optimized condition was effective in reducing the bipolar effect at high temperature ranges by increasing the carrier concentration in the p-type system. To confirm the conclusions, the electrical conductivity, Seebeck coefficient, and power factor were measured. The results matched well with the microstructure and with those of an XRD analysis performed for the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.801-807
• /
• 2009

In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.286-287
• /
• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Journal of electromagnetic engineering and science
• /
• v.6 no.2
• /
• pp.92-97
• /
• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• ETRI Journal
• /
• v.27 no.5
• /
• pp.569-578
• /
• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Journal of IKEEE
• /
• v.15 no.1
• /
• pp.37-42
• /
• 2011

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.07a
• /
• pp.157-160
• /
• 2001

APF optical link용 receiver를 하나의 바이폴라 칩으로 실현하기 위하여 수신파장 영역에서 고속.고감도 특성을 갖는 바이폴라 집적용 Si photodiode를 에피 두게 6$\mu\textrm{m}$(epi06)와 12$\mu\textrm{m}$(epi12)로 제작하고 이의 전기.광학적 특성을 조사하였다. 제작된 소자의 전기.광학적 특성을 -5 V의 동작전압에서 측정한 결과, 6 $\mu\textrm{m}$ 에피두께의 경우 접합커패시턴스와 암전류가 각각 4.8 pF와 2.6 pA로 나타났으며, 광신호 전류와 감도특성은 670 nm의 중심파장을 갖는 3.15 ㎼의 입사광 전력 아래에서 각각 0.568 $\mu\textrm{A}$와 0.18 A/W로 나타났다. 에피층의 두께가 12 $\mu\textrm{m}$의 경우 접합커패시턴스와 암전류는 각각 9.8 pF와 171.3 pA로 나타났으며, 광신호 전류와 감도특성은 3.679$\mu\textrm{A}$와 1.17 A/W로 나타났다. 제작된 두 소자는 적색 파장(λ$_{p}$=670nm)부근에서 최대 spectral response(λ$_{p}$=600nm at epi06, λ$_{p}$=700nm at epi12)를 보이고 있다.이고 있다.