• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• 전력전자학회논문지
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• 제7권1호
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• pp.81-90
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• 2002

본 논문은 직접토크제어에 의한 리럭턴스 동기 전동기의 위치센서 없는 고성능 제어시스템을 제안한다. 이 시스템은 고정자 자속관측기, 속도/토크 관측기, 두 개의 디지털 히스테리시스 제어기, 최적 스위칭 룩업 테이블, IGBT 전압형 인버터, 그리고 TMS320C31 DSP보드로 구성된다. 넓은 속도 범위에서의 안정된 응답특성을 얻기 위해서 전동기 단자에서 얻어진 전압과 전류를 사용하는 폐루프 자속관측기를 사용하였다. 개발된 고성능 속도제어 시스템의 동특성을 검증하기 위해서 1.0[kW] 리럭턴스 동기 전동기를 사용하여 시뮬레이션과 실험을 수행한 결과 저속영역과 고속영역 모두 우수한 동특성을 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• 한국의류학회지
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• 제15권2호
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• pp.211-227
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• 1991

The purpose of this study was to investigate the effects of design modification, decoration and color scheme of traditional Korean women's clothing on impression formation by 2 age groups of women. The instruments developed for the study were 2 sets of stimuli and a response scale. Stimuli I (design stimuli) consisted of 6 line drawings of female figures in Korean clothing and modified Korean style clothing, whereas stimuli II (color stimuli) consisted of 6 colored drawings of female figures in different color schemes. The 7-point semantic differential scale of 14 bipolar adjectives were used for the response scales. 144 female college students and 144 middle·aged women subjects were randomly assigned to one of 6 drawings from each set of stimuli. The data were analyzed by factor analysis, ANOVA and t-test. 1) There factors emerged to account for dimensions of design and color scheme, respectively. The first factor was interpreted as Evaluation/prestige both in design (stimuli I) and color scheme (stimuli II), the second factor was Modernity for stimuli I, and the third factor for stimuli I was Practicality. On the other hand, the Luxuriousness/Individuality was factor 2 and Modernity was factor 3 for stimuli ll. 2) Modification had the largest effect on impressions regarding design and decorated designs had a partial effect on the impression of Modernity and Practicality. The female figures in modified Korean style clothing were perceived as more prestigious, modern and practical than those in traditional Korean clothing. 3) Color schemes had little effect on impressions, while perceiver's age had a larger effect. Middle·aged women formed more positive impressions toward Korean clothing of various color schemes than female college students.

• 한국의류학회지
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• 제26권3_4호
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• pp.402-411
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• 2002

미국대학생이 인지하는 한국전통문양의 감성이미지와 그 구조를 살펴보았으며, 그 결과를 종합하면 다음과 같다. 첫째, 한국전통문양의 종류, 표현유형, 구성형식, 적용대상에 따른 감성이미지는 고급성, 단순성, 쾌할성, 현대성의 네 가지 차원으로 구성되어 있으며, 고급성과 단순성 차원이 주요 차원인 것으로 나타났다. 둘째, 한국전통문양에 대한 감성이미지는 독립변인인 문양의 종류, 표현유형, 구성형식, 적용대상에 따라 유의한 차이가 있었으며, 고급성 차원의 이미지에는 문양의 표현유형이, 쾌활성 차원의 이미지에는 문양의 구성형식이, 현대성 차원의 이미지에는 문양의 적용대상이 중요한 영향을 미쳤다.

• The Korean Journal of Physiology and Pharmacology
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• 제24권6호
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• pp.545-553
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• 2020

Aripiprazole is a quinolinone derivative approved as an atypical antipsychotic drug for the treatment of schizophrenia and bipolar disorder. It acts as with partial agonist activities at the dopamine D2 receptors. Although it is known to be relatively safe for patients with cardiac ailments, less is known about the effect of aripiprazole on voltage-gated ion channels such as transient A-type K⁺ channels, which are important for the repolarization of cardiac and neuronal action potentials. Here, we investigated the effects of aripiprazole on Kv1.4 currents expressed in HEK293 cells using a whole-cell patch-clamp technique. Aripiprazole blocked Kv1.4 channels in a concentration-dependent manner with an IC₅₀ value of 4.4 μM and a Hill coefficient of 2.5. Aripiprazole also accelerated the activation (time-to-peak) and inactivation kinetics. Aripiprazole induced a voltage-dependent (δ = 0.17) inhibition, which was use-dependent with successive pulses on Kv1.4 currents without altering the time course of recovery from inactivation. Dehydroaripiprazole, an active metabolite of aripiprazole, inhibited Kv1.4 with an IC₅₀ value of 6.3 μM (p < 0.05 compared with aripiprazole) with a Hill coefficient of 2.0. Furthermore, aripiprazole inhibited Kv4.3 currents to a similar extent in a concentration-dependent manner with an IC₅₀ value of 4.9 μM and a Hill coefficient of 2.3. Thus, our results indicate that aripiprazole blocked Kv1.4 by preferentially binding to the open state of the channels.

• 대한의용생체공학회:의공학회지
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• 제40권6호
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• pp.242-249
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• 2019

Forearm electromyography (EMG) generated by wrist movements has been widely used to develop an electrical prosthetic hand, but EMG generated by finger movements has been rarely used even though 20% of amputees lose fingers. The goal of this study is to improve the classification performance of different finger movements using a deep learning algorithm, and thereby contributing to the development of a high-performance finger-based prosthetic hand. Ten participants took part in this study, and they performed seven different finger movements forty times each (thumb, index, middle, ring, little, fist and rest) during which EMG was measured from the back of the right hand using four bipolar electrodes. We extracted mean absolute value (MAV), root mean square (RMS), and mean (MEAN) from the measured EMGs for each trial as features, and a 5x5-fold cross-validation was performed to estimate the classification performance of seven different finger movements. A long short-term memory (LSTM) model was used as a classifier, and linear discriminant analysis (LDA) that is a widely used classifier in previous studies was also used for comparison. The best performance of the LSTM model (sensitivity: 91.46 ± 6.72%; specificity: 91.27 ± 4.18%; accuracy: 91.26 ± 4.09%) significantly outperformed that of LDA (sensitivity: 84.55 ± 9.61%; specificity: 84.02 ± 6.00%; accuracy: 84.00 ± 5.87%). Our result demonstrates the feasibility of a deep learning algorithm (LSTM) to improve the performance of classifying different finger movements using EMG.

• 전력전자학회논문지
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• 제6권5호
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• pp.416-422
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• 2001

BLDC (Brushless DC) 전동기는 선형적인 토크 대 전류, 속도 대 전압특성을 갖고 있으며 기계적 전기적인 잡음이 없고, 가감속 제어가 용이하며, 토크 대 관성의 비가 매우 높아 소형으로 높은 출력을 낼 수 있다는 장점을 가지고 있다. 그러나 전기자 전류의 전환 (Commutation)시 고정자 권선의 인덕턴스 성분과 역기전력으로 인해 발생되는 전류리플은 BLDC 전동기의 구동시 발생되는 토크리플의 중요한 원인이 되어, 고정밀 서보계통에 대한 응용에 큰 장애가 되고 있다. 본 논문에서는 퓨리에 시리즈계수를 사용한 새로운 전류제어 알고리즘을 개발하여 상전류 전환시 발생하는 전류리플을 최소화함으로서 토크리플을 현저히 감소 시켰으며, BLDC 전동기의 구동을 위해 널리 사용되고 있는 UNIPOLAR PWM 방식과 시뮬레이션 및 실험을 통해 비교함으로써, 새로운 알고리즘의 효용성을 입증하고자 한다.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.