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Lee, Yong-Jin;Kim, Sang-Woo;Kim, Gyeung-Ho;Lee, Jong-Ho;Ahn, Jin-Ho
- Korean Journal of Materials Research
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- v.13 no.1
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- pp.36-42
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- 2003
The oxidation behaviors of Y-Cr bilayer deposited on ferritic steel by magnetron-sputtering for application of the Fe-Cr alloys as interconnectors of planar-type solid oxide fuel cells (SOFCs) were studied. After oxidation at $800^{\circ}C$ for 40 hours, the major phase of $Y_2$$O_3$and the minor phase of $YCrO_3$, $Mn_{1.5}$ $Cr_{1.5}$ $O_4$and Cr$_2$SiO$_4$were formed in the Y/Cr bilayered samples, while the major phase of Cr$_2$O$_3$and the minor phase of $Y_2$$O_3$were formed as the major phase in the Cr/Y bilayered samples. The Log(ASR/T) that expresses electric resistance of the Y/Cr coated specimen with nonconducting $_Y2$$O_3$oxide showed high value of -2.80 Ω$\textrm{cm}^2$$K^{-1}$ / and that of the Cr/Y coated specimen with conducting $Cr_2$$O_3$oxide appeared to be -4.11 Ω$\textrm{cm}^2$$^{K}$ . The electric resistance of the Y/Cr coated specimen was largely increased due to the formation of high resistance oxide scales. However, the Cr/Y coated specimen did not show any increase in the electric resistance and had the long-term stability of oxidation because there was no formation of the secondary phases with low conductivity.
https://doi.org/10.3740/MRSK.2003.13.1.036 인용 PDF KSCI

장지근;엄우용;신철상;장호정
- Journal of the Korean Institute of Telematics and Electronics D
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- v.35D no.5
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- pp.87-92
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- 1998
Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.
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Kwon, Young-Jae;Lee, Jong-Mu;Bae, Dae-Lok;Kang, Ho-Kyu
- Korean Journal of Materials Research
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- v.8 no.7
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- pp.579-583
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- 1998
Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.
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