• Communications for Statistical Applications and Methods
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• 제22권6호
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• pp.655-664
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• 2015

A nonresponse adjusted raking ratio estimator that consists of weighting adjustment using estimated response probability and raking procedure is often used to reduce the nonresponse bias and keep the calibration property of the estimator. We investigated asymptotic properties of nonresponse adjusted raking ratio estimator and proposed a variance estimator. A simulation study is used to examine the performance of suggested estimators.

• Journal of Magnetics
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• 제5권3호
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• pp.90-98
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• 2000

The change in the magnetic properties of a spin-valve multilayer with the structure IrMn (9 m)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiEe (6 nm) is investigated as a function of the size and the aspect ratio. At a fixed aspect ratio (the length/width ratio) of 2, the magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 $\mum$, and, at a length of 1 $\mum$, they become even more dominant. In the case of a fixed multilayer size (2.4 $\mum$) which is indicated by the sum of the length and the width, magnetization change occurs by continuous spin-reversal and M-H loops are characterized by no or very small hysteresis at aspect ratios smaller than unity, At aspect ratios greater than unity, magnetization change occurs by spin-flip resulting in squared hysteresis loops. A very large changes in the coercivity and the bias field is observed, and these results are explained by two separate contributions to the total magnetostatic interactions: the coercivity by the self-demagnetizing field and the bias field by the interlayer magnetostatic interaction field.

• 한국표면공학회지
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• 제23권2호
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• pp.24-29
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• 1990

The TiN filmms were deposited on the stainless steel substrates by BARE techinique in order to investigate the effects of process parameters such as source-to-substate distance (15-35cm), N2 pressure(4$\times$10-10 -1$\times$10-3mb)and bias voltage(O-2000V), on the deposition rate, the concentration ratio [N/Ti] and the surface color of the films. The deposition rate was deduced from the weight measurement, the [N/ti] ratio by ESCA. The deposition rate decreased with a relationship of=40.2/D2 where D was source-to-substrate distance. The effect of the bias voltage and the N2pressure on the deposition rate, however, appeared negligble. The [N/Ti] ratio was in the narrow range of 0.7 tp 0.8 It increased slightly with the N2 partial pressure and deceased with the source-to-substrate distance. It was confired by ESCA that a significant amount of oxygen and carbon was contaminated after deposition in the top surface of TiN films. The surface color of TiN film was changed from light gold yellow to reddish gold yellow with increasing [N/Ti] ratio.

• 한국재료학회지
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• 제10권3호
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• pp.179-183
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• 2000

$BCI_3/H_2/Ar$ ICP(Inductively Coupled Plasma)를 이용한 GaN이 건식식각에 있어서 공정변수들이 식각 특성에 미치는 영향을 분석하고 적정조건을 도출하였다. 연구 결과 식각속도와 측벽수직도 공히 ICP 전력, bias 전압과 $BCI_3$ 조성의 증가, 공정압력의 감소에 의해 현저히 증가하며, 온도의 증가에 따라 다소간 증가하였고, 온도의 증가에 따라 다소간 증가하였고, $BCI_3$조성이 가장 큰 영향을 미쳤다. 표면거칠기는 bias 전압 증가에 의해 크게 향상, $BCI_3$ 조성의 감소에 따라 향상되었으며 다른 변수는 큰 영향을 미치지 않았다. 결과적으로 ICP 전력 900W, bias 전압 400V, $BCI_3$ 조성 60%, 공정압력 4mTorr의 조건에서 175nm/min 정도의 $CI_2$ 사용 시와 유사한 높은 식각속도와 평탄한 표면이 얻어졌다. Bias 전압이 낮은 경우 식각 후 시료 표면에 $GaC_x$로 추정되는 식각부산물이 관찰되었다.

• Journal of Magnetics
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• 제9권1호
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• 소음진동
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• 제8권6호
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• pp.1023-1029
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• 1998

When one attempts to construct a hologram. one finds that there are many sources of measurement errors. These errors are even amplified if one predicts the pressures close to the sources. The pressure estimation errors depend on the following parameters: the measurement spacing on the hologram plane. the prediction spacing on the prediction plane. and the distance between the hologram and the prediction plane. This raper analyzes quantitatively the errors when these are distributed irregularly on the hologram plane The sensor mismatch and inaccurate measurement location. position mismatch. are mainly addressed. In these cases. one can assume that the measurement is a sample of many measurement events. The bias and random error are derived theoretically. Then the relationship between the random error amplification ratio and the parameters mentioned above is examined quantitatively in terms of energy.

• Communications for Statistical Applications and Methods
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• 제22권3호
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• pp.255-264
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• 2015

This paper addressed the problem of estimation of finite population mean in double sampling for stratification. This paper proposed a generalized ratio-cum-product type estimator of population mean. The bias and mean square error of the proposed estimator has been obtained upto the first degree of approximation. A particular member of the proposed generalized estimator was identified and studied from a comparison point of view. It is observed that the identified particular estimator is more efficient than usual unbiased estimator and Ige and Tripathi (1987) estimators. An empirical study was conducted in support of the theoretical findings.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Tribology and Lubricants
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• 제11권1호
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• pp.37-43
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• 1995

Sputtering parameters such as N$_{2}$ flow percentage and bias voltage in reactive TiN film deposition by RF magnetron sputtering system were selected to investigate the effects of sputtering deposition conditions on tribological characteristics of TiN films. Wear scar of the steel ball damaged by TiN films was measured by SEM to understand wear behavior of deposited TiN films. Crystallization and induced strain of TiN were detected by XRD. Wear mode changed from plastic to brittle with increasing N$_{2}$ ratio. Wear scar by sliding with TiN film deposited at around 27% N$_{2}$ ratio was maximum. The results indicate that bias voltage affects tribological behavior by formation of high density film and internal stress.

• 전자공학회논문지A
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• 제28A권11호
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.