• Title/Summary/Keyword: bias effect

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Fault Detection and Isolation Performance Analysis of Modified SPRT with respect to Inertial Sensor Errors

  • Kim, Jeong-Yong;Yang, Cheol-Kwan;Shim, Duk-Sun
    • 제어로봇시스템학회:학술대회논문집
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    • 2002.10a
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    • pp.32.3-32
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    • 2002
  • We analyze the effect of main inertial sensor errors such as, misalignment, scale factor error and bias on the performance of modified sequential probability ratio test (SPRT) for sequential fault detection and isolation (FDI). The inertial sensor errors cause the modified SPRT method to give false alarm. We use a two-stage KF to obtain a modified parity vector with which the inertial sensor errors can be removed and thus modified SPRT method can be used regardless of inertial sensor errors.

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The effect of substrate bias on the perferred-orientation and microstructure of TiN films (기판 바이어스 전압변화에 따른 TiN박막의 배향성 및 미세구조 변화)

  • Seo, Hyeon;Han, Man-Geun;Park, Won-Geun;Seo, Pyeong-Seop;Jeon, Seong-Yong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.159-159
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    • 2009
  • 본 연구는 기판 바이어스 전압변화에 따른 DC 스퍼터링 TiN 박막의 우선 결정배향성, 표면조도, 평균결정립 크기 및 단면 미세구조에 미치는 영향에 대해 조사하였다.

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Nonlinear Microwave Performance of an Optoelectronic CPW-to-Slotline Ring Resonator on GaAs Substrate

  • Lee, Jong-Chul
    • Journal of Electrical Engineering and information Science
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    • v.2 no.3
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    • pp.95-98
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    • 1997
  • A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

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Kinetic Model on the Vacuum Deposition (眞空 蒸着에 관한 速度論的 모델)

  • Kim, Dae-Soo
    • Journal of Surface Science and Engineering
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    • v.19 no.2
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    • pp.51-58
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    • 1986
  • A theoretical model was proposed to predict the rate of particles impinging on the negatively biased substrate and the total kinetic energy per unit time. The model takes into an account of kinetic theory based on Maxwell statistics and elementary plasma theory, incorporated with Hertz-Knudsen's evaporation theory. It is found that as the bias potential increases the ion flux and kinetic energy increases to a value above which the effect of potential is insignificant.

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Stress-Bias Effect on Poly-Si TFT's on Glass Substrate

  • Baek, Do-Hyun;Yong Jae lee
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.933-936
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    • 2000
  • N-channel poly-Si TFT, processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5um and 3um poly-Si TFT’s are 3.3V, 37V respectively. With the threshold voltage shift, the degradation of transconductance and subthreshold swing is also observed.

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Bias effect on the chemical structure and hardness during deposition of carbon nitride film by RF magnetron sputtering

  • No, Gi-Min;Yu, Sin-Jae;Kim, Jeong-Hyeong;Seong, Dae-Jin;Choe, Si-Gyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.243-243
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    • 2010
  • $CN_x$ films fabricated by different deposition techniques to synthesize of $\beta-C_3N_4$ involve two problems; nitrogen deficiency and $sp^2$ hybridized bonding. Nitrogen contents in most of the thin films are lower than stoichiometric composition 57%

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A Meta-Analysis of the Effects of the Career Education Program for Students with Disabilities (장애 학생을 대상으로 한 진로교육 프로그램의 효과에 관한 메타분석)

  • Choi, Hea Young
    • Human Ecology Research
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    • v.55 no.3
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    • pp.289-301
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    • 2017
  • This study was to analyze the effects of the career education program for students with disabilities. The analysis was performed based on two research questions. First, the total effect size on the career program for students with disabilities was considered. Second, the difference of the effect size between the sub-groups regarding dependency variables, types of disabilities, types of schools, number of people, and number of sessions was also included for analysis. For this, the author reviewed a database and analyzed 12 previous studies, presented in five master thesis and seven Korean journals from 2005 to 2015 based on the author's selection criteria. Subsequently, 27 effect size was found. The publication bias was analyzed by Rosenthal's fail-safe N. The overall effect size for all studies on the random effect model was 1.717, which was positive and high in value. Given the heterogeneity among the effect size, the subgroup analysis was conducted, and indicated that the effect size was significantly high when the purpose of the program was related to the student's self-decision ability. The results demonstrated that the programs were specified for students with intellectual disabilities, when the schools were elementary, when the number of students in a group was 1-10, and when program sessions lasted more than 21 times, the effect size was high. Implication for the future research and program implication were discussed on these findings.

Magnetoresistance Characteristics of Magnetic Tunnel Junctions Consisting of Amorphous CoNbZr Alloys for Under and Capping Layers

  • Chun, Byong Sun;Lee, Seong-Rae;Kim, Young Keun
    • Journal of Magnetics
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    • v.9 no.1
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    • pp.13-16
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    • 2004
  • Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

The Effect of Visual Cues in the Identification of the English Consonants /b/ and /v/ by Native Korean Speakers (한국어 화자의 영어 양순음 /b/와 순치음 /v/ 식별에서 시각 단서의 효과)

  • Kim, Yoon-Hyun;Koh, Sung-Ryong;Valerie, Hazan
    • Phonetics and Speech Sciences
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    • v.4 no.3
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    • pp.25-30
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    • 2012
  • This study investigated whether native Korean listeners could use visual cues for the identification of the English consonants /b/ and /v/. Both auditory and audiovisual tokens of word minimal pairs in which the target phonemes were located in word-initial or word-medial position were used. Participants were instructed to decide which consonant they heard in $2{\times}2$ conditions: cue (audio-only, audiovisual) and location (word-initial, word-medial). Mean identification scores were significantly higher for audiovisual than audio-only condition and for word-initial than word-medial condition. Also, according to signal detection theory, sensitivity, d', and response bias, c were calculated based on both hit rates and false alarm rates. The measures showed that the higher identification rate in the audiovisual condition was related with an increase in sensitivity. There were no significant differences in response bias measures across conditions. This result suggests that native Korean speakers can use visual cues while identifying confusing non-native phonemic contrasts. Visual cues can enhance non-native speech perception.

Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications

  • Kim, Illh-Wan;Seok, Seon-Ho;Kim, Hyeon-Cheol;Kang, Moon-Koo;Chun, Kuk-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.1
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    • pp.58-66
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    • 2005
  • Inertial-grade vertical-type and lateral-type differential resonant accelerometers (DRXLs) are designed, fabricated using one process and tested for navigational applications. The accelerometers consist of an out-of-plane (for z-axis) accelerometer and in-plane (for x, y-axes) accelerometers. The sensing principle of the accelerometer is based on gap-sensitive electrostatic stiffness changing effect. It says that the natural frequency of the accelerometer can be changed according to an electrostatic force on the proof mass of the accelerometer. The out-of-plane resonant accelerometer shows bias stability of $2.5{\mu}g$, sensitivity of 70 Hz/g and bandwidth of 100 Hz at resonant frequency of 12 kHz. The in-plane resonant accelerometer shows bias stability of $5.2{\mu}g$, sensitivity of 128 Hz/g and bandwidth of 110 Hz at resonant frequency of 23.4 kHz. The measured performances of two accelerometers are suitable for an application of inertial navigation.