• Title/Summary/Keyword: bias effect

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The Effect of Local-Global Environmental Bias on the Type Ia Supernova Host Galaxy Studies

  • Kim, Young-Lo;Sullivan, Mark;Smith, Mathew;Lee, Young-Wook
    • The Bulletin of The Korean Astronomical Society
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    • v.41 no.1
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    • pp.32.4-33
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    • 2016
  • Recent studies suggest that the difference between global and local properties of galaxies (the local-global environmental (LoG) bias) might be important in the Type Ia supernova (SN Ia) host galaxy studies. Obtaining local spectroscopic properties of hosts at high redshift, however, is challenging. Here we will introduce a more efficient way to conduct this study by only using photometric data. We find that when we restrict a sample to the hosts whose stellar mass is less than $10^{10}$ $M_{\odot}$, a sample without LoG bias is efficiently selected. From the sample without LoG bias, we confirm that SNe Ia in locally star-forming environment are $0.103{\pm}0.010mag$ and $0.085{\pm}0.012mag$ fainter than those in locally passive region, for MLCS2k2 and SALT2, respectively. Because of ~6 times larger sample that covers much wider redshift range, our results are far more significant statistically, $10.3{\sigma}$ for MLCS2k2 and $7.1{\sigma}$ for SALT2, than previous results.

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Electrical and Optical Properties of GZO Thin Films using Substrate Bias Voltage for Solar Cell (기판 바이어스 전압을 이용한 태양전지용 GZO 박막의 전기적, 광학적 특성)

  • Kwon, Soon-Il;Lee, Seok-Jin;Park, Seung-Bum;Jung, Tae-Hwan;Lim, Dong-Gun;Park, Jea-Hwan;Choi, Won-Seok;Park, Moon-Gi;Yang, Kea-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.373-376
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    • 2009
  • In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.

Effect of Bias Voltage on the Micro Discharge Characteristic of MgO Thin Film Prepared by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의해 형성된 MgO 박막의 micro 방전에 미치는 bias 전압의 영향에 관한 연구)

  • Kim, Young-Kee;Kim, In-Sung;Jeong, Joo-Young;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.2032-2034
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

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Microstructural Effects on DC Bias Characters in FeSiBNi Amorphous Ribbon (FeSiBNi 비정질 리본의 열처리 조건에 따른 미세구조가 직류중첩특성에 미치는 영향)

  • 장용익;김종렬;송용설
    • Journal of the Korean Magnetics Society
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    • v.10 no.1
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    • pp.1-6
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    • 2000
  • Amorphous Fe$_{79.7}$Si$_{9.3}$B$_{9.7}$Ni$_{1.4}$ ribbon alloys were fabricated by a single roll method. To enhance D. C. bias properties, the magnetic and micro-structural changes have been investigated as the variation of annealing time and condition. The D. C. bias properties were found to be directly related to micro-structural changes. Primary ${\alpha}$-Fe dendrites with 200∼300 nm showed the best D. C. bias properties, which resulted from the magnetic domain wall pinning effect. Due to the differences of cooling rate, the growth shape and distribution of the dendrites is divided into two areas.

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Tunneling Current Calculation in HgCdTe Photodiode (HgCdTe 광 다이오드의 터널링 전류 계산)

  • 박장우;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.56-64
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    • 1992
  • Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

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Dry etching of Si by direct DC biasing (직접 인가된 DC 바이어스에 의한 Si의 건식 식각)

  • Ahn, H.J.;Moon, S.H.;Lee, J.S.;Shim, K.H.;Yang, J.W.;Shin, H.C.;Lee, K.H.;Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.162-163
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    • 2007
  • The dry etching of Si was investigated using direct dc biasing to the Si substrate. The TCP type etching system with a feed-through for applying a dc bias was used in the etching. The applied dc bias and ICP power was varied to examine the effect on the etching at the fixed chamber pressure and $SF_6$ flow rate of 10 mTorr and 10 sccm during. When the plasma was generated at ICP power of 100 W, the etch rate of Si was increased with the bias for the biased samples. However, the etching of Si for the non-biased sample was enhanced for the increased ICP power.

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A Study on Formation and Evaluation of he Thin Films for Improvement of Tribology Properties (Tribology특성 향상을 위한 Ag 박막의 형성과 평가에 관한 연구)

  • 이경황;이상기;송복한;정병진;박창남;문경만;이명훈
    • Journal of the Korean institute of surface engineering
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    • v.33 no.5
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    • pp.319-328
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    • 2000
  • Silver is known to have such characteristics as low shear strength, good transfer-film forming tendency, and good corrosion resistance. Silver thin films have been prepared by ion plating of physical vapour deposition (PVD) using both argon gas pressure and bias voltage of processing condition. After the silver films were prepared, the properties in them were examined by gas pressure and bias voltage of substrate. Their morphology and crystal orientation were investigated by scanning electron microscopy (SEM) and X-ray diffractor. The properties of film were, also, studied to relate with morphology, X-ray diffraction pattern, and friction coefficient at vacuum ambient. The friction coefficient was stabilized remarkably on deposited films with increasing argon pressure for deposition. Also, the effect of increasing of the bias voltage for deposition resulted in lower friction coefficient and stability in $1.7$\times$10^{-4}$ torr. On the contrary, behavior of friction coefficient was stabilized on deposited films with decreasing the bias voltage in $1.7$\times$10^{-5}$ torr for deposition.

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Exploratory Study: A Modification Training Method of Attentional Bias Toward Safety

  • Gao, Jingqi;Wu, Xiang;Luo, Xiaowei;Zhang, Ao
    • Safety and Health at Work
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    • v.12 no.3
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    • pp.346-350
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    • 2021
  • Background: The high sensitivity of individuals toward safety information in production activities, that is, attentional bias toward safety (ABS), can positively predict safe behaviors. It has become a hot topic in current organizational safety behavior research. However, there is no literature on its modification method. Methods: Based on the modified dot-probe task, we designed a modification training method of ABS. The training method required subjects to respond to the location of detection points that presented after safety stimulus and neutral stimulus pictures. Subjects' attentional bias values of safety and neutral pictures were measured during the experiment. Twenty-one students were selected and divided into a control group and training group to gain comparable results. Results: A novel training method was developed in this study to promote the efficacy of safety stimulus by activating ABS of the subjects. Moreover, repeated trainings and preacquired relative knowledge can enhance this effect. Conclusion: This study develops an experimental approach to evaluate the effectiveness of safety education and safety training, and also provides a new research idea for accident prevention.

A Study on Bias Effect on Model Selection Criteria in Graphical Lasso

  • Choi, Young-Geun;Jeong, Seyoung;Yu, Donghyeon
    • Quantitative Bio-Science
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    • v.37 no.2
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    • pp.133-141
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    • 2018
  • Graphical lasso is one of the most popular methods to estimate a sparse precision matrix, which is an inverse of a covariance matrix. The objective function of graphical lasso imposes an ${\ell}_1$-penalty on the (vectorized) precision matrix, where a tuning parameter controls the strength of the penalization. The selection of the tuning parameter is practically and theoretically important since the performance of the estimation depends on an appropriate choice of tuning parameter. While information criteria (e.g. AIC, BIC, or extended BIC) have been widely used, they require an asymptotically unbiased estimator to select optimal tuning parameter. Thus, the biasedness of the ${\ell}_1$-regularized estimate in the graphical lasso may lead to a suboptimal tuning. In this paper, we propose a two-staged bias-correction procedure for the graphical lasso, where the first stage runs the usual graphical lasso and the second stage reruns the procedure with an additional constraint that zero estimates at the first stage remain zero. Our simulation and real data example show that the proposed bias correction improved on both edge recovery and estimation error compared to the single-staged graphical lasso.

A Systematic Review of Acupuncture for Oculomotor Nerve Palsy

  • Ku, Yong Ho;Kang, Jae Hui;Kong, Hae Jin;Ryu, Hwa Yeon;Lee, Hyun
    • Journal of Acupuncture Research
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    • v.36 no.2
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    • pp.59-71
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    • 2019
  • Acupuncture treatment for oculomotor nerve palsy has been increasing recently. This study analyzed randomized controlled trials (RCTs) and case reports, using the Cochrane risk of bias tool to investigate the efficacy of acupuncture therapy for oculomotor nerve palsy. This analysis was performed on March 7, 2019, using online databases (PubMed, Cochrane, NDSL, OASIS, CNKI) where 208 articles were retrieved. Of these, there were 18 case reports and 18 RCTs that matched the inclusion criteria, of which 32 studies used acupuncture as the primary intervention, 1 used pharmacopuncture, 1 used fire-needling, and 1 used electroacupuncture. The most commonly used acupoints were BL1, BL2, ST2, TE23, Ex-HN5, LI4, GB14, ST36, GB20 and GB1. Significant findings were reported in all RCTs. Six adverse events were reported in 3 RCTs, with no effect on the outcome. No side effects were reported in the case reports. The risk-of-bias analysis showed that the articles did not report the experimental protocol used and it was not clear whether the study was blinded. Hence, it was difficult to assess the risk of bias. Analysis of 36 studies showed that acupuncture therapy for oculomotor nerve palsy was effective in many cases. It was difficult to evaluate the potential bias.