• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국수산과학회지
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• 제51권1호
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• pp.107-112
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• 2018

One-dimensional numerical model is implemented to investigate temperature variations in the mixed layer depth (MLD) with the passage of typhoons. In the model, we assume a non-divergent, infinite ocean and consider wind effects only, excluding isostatic effects (inverse barometric effects) and upwelling with vertical movement of the water column. Numerical experiments investigate the effects of typhoon tracks on temperature variations, including their dependence on vertical resolutions in the MLD and these results are compared with those in a three-dimensional primitive equation model (POM). The model reproduces features of the observed temperature variations in the MLD fairly well, and implies that wind effects, rather than isostatic effects, play a predominant role in temporal and spatial temperature variations in the MLD. After the passage of typhoons, however, the model does not reproduce well the temperature variations observed in the MLD, because a limitation of the model is its inability to reproduce events such as cyclonic eddy formation (Hong et al., 2011; Masuda and Hong, 2011). The model also shows well the so called 'rightward bias' (Price, 1981) of sea surface cooling which is the most predominant in the right hand side of typhoon's track.

• 한국진공학회지
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• 제21권6호
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• pp.322-327
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• 2012

Molecular beam epitaxy 방법으로 성장된 ZnSe/GaAs 이종접합 구조에서 ZnSe의 electroreflectance (ER) 특성을 조사하였다. ER 측정은 변조 전압, 인가 전압 및 온도의 변화에 따라 수행하였다. 상온의 ZnSe ER 스펙트럼에서 압축 변형에 의하여 분리된 가전자대의 무거운 정공(HH: 2.609 eV) 및 가벼운 정공(LH: 2.628 eV)과 전도대 사이의 전이를 관측하였다. 인가전압이 증가함에 따라 HH 전이 신호의 크기는 점차 감소하였으나, LH 전이 신호의 크기 변화는 미미하였다. 온도에 따른 ER 스펙트럼의 변화를 통하여 변형과 열팽창 계수와의 관계를 연구하였다.

• Journal of Magnetics
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• 제6권4호
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Journal of Magnetics
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• 제8권2호
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 천문학회보
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• 제46권1호
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• pp.27.3-27.3
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• 2021

Supernova (SN) cosmology is based on the assumption that the width-luminosity relation (WLR) in the type Ia SN luminosity standardization would not vary with progenitor age. Unlike this expectation, recent age datings of stellar populations in host galaxies have shown significant correlations between progenitor age and Hubble residual (HR). It was not clear, however, how this correlation arises from the SN luminosity standardization process, and how this would impact the cosmological result. Here we show that this correlation originates from a strong progenitor age dependence of the WLR and color-luminosity relation (CLR), in the sense that SNe from younger progenitors are fainter each at given light-curve parameters x1 and c. This is reminiscent of Baade's discovery of two Cepheid period-luminosity relations, and, as such, causes a serious systematic bias with redshift in SN cosmology. We illustrate that the differences between the high-z and low-z SNe in the WLR and CLR, and in HR after the standardization, are fully comparable to those between the correspondingly young and old SNe at intermediate redshift, indicating that the observed dimming of SNe with redshift is most likely an artifact of over-correction in the luminosity standardization. When this systematic bias with redshift is properly taken into account, there is no evidence left for an accelerating universe, and the SN data now support a decelerating cosmic expansion. Since the SN cosmology has long been considered as the most direct evidence for an accelerating universe with dark energy, this finding poses a serious question to one of the cornerstones of the concordance model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.682-687
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• 2014

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

• Communications for Statistical Applications and Methods
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• 제27권1호
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• pp.141-148
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• 2020

We consider estimating the proportion of true null hypotheses in multiple testing problems. A traditional multiple testing rate, family-wise error rate is too conservative and old to control type I error in multiple testing setups; however, false discovery rate (FDR) has received significant attention in many research areas such as GWAS data, FMRI data, and signal processing. Identify differentially expressed genes in microarray studies involves estimating the proportion of true null hypotheses in FDR procedures. However, we need to account for unknown dependence structures among genes in microarray data in order to estimate the proportion of true null hypothesis since the genuine dependence structure of microarray data is unknown. We compare various procedures in simulation data and real microarray data. We consider a hidden Markov model for simulated data with dependency. Cai procedure (2007) and a sliding linear model procedure (2011) have a relatively smaller bias and standard errors, being more proper for estimating the proportion of true null hypotheses in simulated data under various setups. Real data analysis shows that 5 estimation procedures among 9 procedures have almost similar values of the estimated proportion of true null hypotheses in microarray data.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.438-442
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• 2014

Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that CHC degradation is greater than NBTI degradation for PMOSFET with short channel length. 1/f noise and charge pumping measurement are used for analysis of these degradations.