• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.4
• /
• pp.612-619
• /
• 1990

In this paper, a design method of optical FSK transmitter is described using LD-FM circuit model. In the design of optical FSK transmitter, an optimum bias current was chosen using LD-FM circuit model, and an unequalized FM transfer function was determined at this current. The equalizers that can make this transfer function uniform were designed by use of a simple passive network. For the designed optical FSK transmitter, the pulse-transient and small-signal frequency-deviation responses were simulated and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.132-135
• /
• 2000

This paper present the results of measured Thermally Stimulated Current of EPR(Ethylene Propylene Rubber) sheet material with variation of bias temperature range of -35~80[$^{\circ}C$], the quality of the material of electrode, condition. The origins of these peaks are that, low temperature peak seems to result from dipole, and high temperature peak from the orientation electronic trap.

• 제어로봇시스템학회:학술대회논문집
• /
• 2003.10a
• /
• pp.970-973
• /
• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.50-53
• /
• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• 제어로봇시스템학회:학술대회논문집
• /
• 2005.06a
• /
• pp.237-240
• /
• 2005

A novel current mode high Q bandpass filter with electronically tuable values of Q based on second generation current controlled conveyor CCCIIs is presented. The circuit offers the advantages of using a few passive elements. The center frequency and pole-Q can be independently adjusted by via dc bias current of CCCIIs, It is shown from SPICE simulation that the results agree well with theoretical analysis

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.74-77
• /
• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : Cl$_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained r$\sub$m/ values were smaller than 0.1Ω at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below 0.2 Ω.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1929-1932
• /
• 2002

In this paper, some parameters are studied for the performance improvement of a bulk optical current sensor. The performance of optical current sensor is influenced by current measuring range, Verdet constant change due to temperature change, temperature variation of wave plate, signal to noise ratio of optical transmitter/receiver, optical bias mismatch. Two types of optical current sensors are implemented and tested in the current range from 10 ampere to 200 ampere.

• Proceedings of the Korea Society for Industrial Systems Conference
• /
• 1997.11a
• /
• pp.451-462
• /
• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Korean Journal of Optics and Photonics
• /
• v.11 no.3
• /
• pp.187-192
• /
• 2000

We analyze the parametric amplification by the nonlinear characteristics in a semiconductor laser using a perturbation theory and discuss its result. The parametric gain increases with increase of the pump modulation current. It is due to shift of the resonance frequency as the pump modulation current increases. However, it decreases with increase of the bias current and damping constant. Also, it needs phase matching between the pump modulation current and signal modulation current to maximize the parametric gain. The gain decreases for a large signal modulation current due to the saturation of the amplified power. power.

• Proceedings of the IEEK Conference
• /
• summer
• /
• pp.209-212
• /
• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.