• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.91-92
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• 2006

The electrical properties of viologen derivatives were studied in terms of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system ($420^{\circ}C$. Self-assembled monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM solution of viologen derivatives in ethanol for 24 hours to form a monolayer. We measurement of the morphology on the single viologen molecules ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$). The current-voltage (I-V) and differential conductance (dl/dV-V) properties were measured while the electrical properties of the formed monolayer were scanned by using a STS. The effective barrier height of viologen derivatives ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$) were calculated to be 1.076 eV, 1.56 ${\pm}$ 0.3 eV, 1.85 eV, 2.28 eV, respectively.

• Journal of Surface Science and Engineering
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• v.34 no.1
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• pp.3-9
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• 2001

The purpose of this study is to evaluate the properties of the functional gradient thermal barrier coatings by plasma spray process. The evaluations of mechanical and thermal properties such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. Furthermore, residual stress and bond strength have been evaluated. The range of thickness of coated layers was 550~600$\mu\textrm{m}$. The range of hardness of layers was 800~900 Hv and the porosity range of coatings was about 7 to 14%. The top coating layer of $ZrO_2$ in thermal barrier was composed of tetragonal structure after spraying. The coated layers of $ZrO_2$ on the Inconel substrate is the best resistance for thermal fatigue. Those coatings had the least compressive stress in comparison with other coatings. In high temperature oxidation test, the coatings on Inconel substrate was better than the coatings on SUS substrate. The bond strength of the concave type was greater than that of linear types and convex types coatings.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3242-3254
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• 2024

With the increasing usage of nuclear energy, how to properly dispose nuclear waste becomes a critical issue. In this study, a multiscale modeling approach combining the experimental findings is presented to address the illitization process, its impact on transport properties, and system behavior of bentonite buffer in engineered barrier systems (EBS). Through the pore-scale modeling, reactive transport properties such as illite generation rate and effective diffusion coefficient of potassium ion as a function of porosity and temperature are quantified by employing the findings of hydrothermal reaction experiments of Bentonil-WRK. The capability of pore-scale modeling has been developed based on the Darcy-Brinkmann-Stokes equation, involving the processes of smectite illitization and clay swelling. Obtained reactive transport properties are utilized as input parameters for the macroscale modeling to predict the long-term behavior of bentonite buffer in EBS. As such, this study involves the whole workflow of quantifying the reaction parameters of smectite illitization through the hydrothermal reaction experiments, and numerically modeling the reactive transport process of smectite illitization in bentonite buffer of EBS from pore-scale to macroscale. The presented multiscale modeling findings are expected to provide reliable solution for safe nuclear waste disposal with EBS.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.19 no.2
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• pp.95-102
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• 2013

Exfoliated graphite (EFG) with high aspect ratio was incorporated with high density polyethylene (HDPE) for use as high barrier packaging material such as water-sensitivity electric product and pharmaceutical packaging. Also HDPE/EFG nanocomposite films were prepared by adding the compatibilizer for effective dispersion and compatibility. Their chemical properties, crystal structure properties, thermal properties and water barrier properties of as-prepared HDPE/EFG nanocomposite films were investigated as a function of EFG contents. It showed that there is a weak interfacial interaction between HDPE and EFG, however, the water vapor permeations were decreased from 127 to 78 (70 ${\mu}m{\cdot}g/m^2$, $day{\cdot}atm$) by addition of EFG. Especially, the physical properties of HDPE/EFG nanocomposite films were effectively increased up to 0.5 wt%, however, there were no significant improvement of properties in nanocomposite films at the additional EFG loading. To maximize their performance of the nanocomposite films, further research is required to enhance the dispersion of EFG and compatibility of EFG in HDPE matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.466-468
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• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.

• Journal of the Korean Society of Propulsion Engineers
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• v.24 no.4
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• pp.33-40
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• 2020

A sturdy on the adhesion properties of solid propellants, liners, and insulation was carried out according to the types of barrier coats. A barrier coats were used to prevent migration of the plasticizer or curative between the propellant/liner/insulation, and the barrier coat was selected out of Isocyanates with different molecular weight and number of -NCO in one molecule. As a result, it was found that the more the -NCO group and the larger molecular weight, the stronger adhesion. In addition, as a result of experiments about effects of the pot life after applying the barrier coat on bond strength, the adhesion strength was shown to increase as the pot life was short.