• 한국지반공학회:학술대회논문집
• /
• 한국지반공학회 2003년도 봄 학술발표회 논문집
• /
• pp.821-826
• /
• 2003

Laboratory experiments were peformed to understand physical properties of soil-cement column under the influence of acidic flow including metal contaminants and its retaining capacity against metal migration. The contaminant used in this study was nitric acid with Cu and Cd. The Permeability of soil-cement column decreased when pH of the column began to drop below 12. Decreases in pH led to significant reduction of compressive strength of clayey soil-cement specimen, while relatively marginal reduction for sandy soil-cement specimen. The metal contaminants did not leachate from soil-cement column until pH of soil-cement dropped below 7∼8 for Cu and 9∼10 for Cd. Metal contaminants were precipitated and trapped inside the soil-cement column at pHs higher than those mentioned as verified with metal analysis and visual inspection. This indicated that soil-cement column not only performs well as a cut-off wall, but also helps alleviating the level of contamination of the surrounding environment.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.209.2-209.2
• /
• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.763-766
• /
• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.69-76
• /
• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• 한국전기전자재료학회논문지
• /
• 제22권6호
• /
• pp.466-468
• /
• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.

• Transactions on Electrical and Electronic Materials
• /
• 제4권4호
• /
• pp.30-35
• /
• 2003

In this paper, the $CF_4$ decomposition efficiency is investigated for three simulated plasma reactors that are needle plate reactor, metal particle reactor, and dielectric barrier reactor with hole (DBH). The$CF_4$ decomposition efficiency by DBH is much better than that by needle plate reactor or metal particle reactor. When applied voltage is increased up to the critical voltage for spark formation in the all reactors, the $CF_4$ decomposition efficiency is increased. The $CF_4$ decomposition efficiency in needle plate reactor and metal particle reactor is about $12\%$ and $22\%$ respectively at applied voltage of 23 kV (consumption power: 110 W) and $CF_4$ concentration of 500 ppm, however, the $CF_4$ decomposition efficiency is more than $95\%$ in case of DBH. DBH should be much better than two reactors investigated for $CF_4$ decomposition.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.771-774
• /
• 2003

The mechanical properties of barrier ribs in PDP require quantification in order to control the defects and to increase the yield in the process. Several different types of rib materials were tested for hardness (H) and Young's modulus (E) with a microtip indenter (Berkovich type). For the assessment of fracture toughness of the rib, a macro Vikers indenter was used. The materials with 30wt% of filler were fired at between $490^{\circ}C$ and $570^{\circ}C$. As a result, the composite became fully densified at $520^{\circ}C$, which is near the T s (Littleton softening point) of glass frit. As the filler content increased, the fracture toughness also $(K_{IC})$ increased in the range of 0.60 to 2.63 $MPa{\cdot}m^{0.5}$ after sintering at $550^{\circ}C$. The results suggest that the application of a nano-indenter would be useful for testing the mechanical properties of barrier ribs.

• 한국표면공학회지
• /
• 제48권1호
• /
• pp.11-22
• /
• 2015

Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

• 한국전기전자재료학회논문지
• /
• 제18권10호
• /
• pp.877-882
• /
• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

• 한국전기전자재료학회논문지
• /
• 제30권5호
• /
• pp.276-283
• /
• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.