• Title/Summary/Keyword: barrier films

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Epitaxial Overlayers vs Alloy Formation at Aluminum-Transition Metal Interfaces

  • Smith, R.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.29-29
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    • 1999
  • The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

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Improvement of Permeation of Applied Multi-layer Encapsulation of Thin Films on Ethylene Terephthalate(PET) (고분자 기판위에 다층 구조의 박막형 보호층을 적용한 투습률 향상)

  • Kim Jong-Hwan;Han Jin-Woo;Kim Young-Hwan;Seo Dae-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.3
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    • pp.255-259
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    • 2006
  • In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of $0.57\;g/m^2{\cdot}day$ (bare subtrate) to $1{\times}10^{-5}\;g/m^2{\cdot}day$ after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Large Scale Applications of Nanocellulosic Materials - A Comprehensive Review -

  • Lindstrom, Tom;Naderi, Ali;Wiberg, Anna
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.47 no.6
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    • pp.5-21
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    • 2015
  • The common production methods of nanocellulosic (cellulosic nanofibrils, CNF) materials from wood are being reviewed, together with large scale applications and particularly papermaking applications. The high energy demand for producing CNF has been one particular problem, which has been addressed over the years and can now be considered solved. Another problem was the clogging of homogenizers/microfluidizers, and the different routes to decrease the energy demand. The clogging tendency, related to the flocculation tendency of fibres is discussed in some detail. The most common methods to decrease the energy demand are TEMPO-oxidation, carboxymethylation and mechanical/enzymatic pre-treatments in the order of increased energy demand for delamination. The rheology characteristics of CNF materials, i.e. the high shear viscosity, shear thinning and the thixotropic properties are being illuminated. CNF materials are strength adjuvants that enhance the relative bonded area in paper sheets and, hence increase the sheet density and give an increased strength of the paper, particularly for chemical pulps. At the same time papers obtain a lower light scattering, higher hygroexpansion and decreased air permeability, similar to the effects of beating pulps. The negative effects on drainage by CNF materials must be alleviated through the appropriate use of microparticulate drainage aids. The use of CNF in films and coatings is interesting because CNF films and coatings can provide paper/board with good oxygen barrier properties, particularly at low relative humidities. Some other high volume applications such as concrete, oil recovery applications, automotive body applications and plastic packaging are also briefly discussed.

Fabrications of Pd/poly 3C-SiC schottky diodes for hydrogen gas sensor at high temperatures (고온 가스센서용 Pd-다결정 3C-SiC 쇼트키 다이오드 제작)

  • Ahn, Jeong-Hak;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.78-79
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    • 2008
  • In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

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Study on the Water Vapor Permeation Properties of the Inorganic Thin Composite Film for the Passivation Layer in the OLED (유기 EL 보호층으로 적용하기 위한 무기 복합 박막의 투습율 특성 연구)

  • 김광호;이주원;김영철;주병권;김재경
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.432-438
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    • 2004
  • In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

Molecular Behavior and Electro-Chemical Properties of Dendrimer and Staff-type Polymer Monolayers in Crown Function Group (크라운 기능기를 포함한 덴드리머 및 Staff-type 고분자 단분자막의 분자거동 및 전기ㆍ화학적 특성)

  • 장정수
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.52 no.5
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    • pp.213-213
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    • 2003
  • We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

Molecular Behavior and Electro-Chemical Properties of Dendrimer and Staff-type Polymer Monolayers in Crown Function Group (크라운 기능기를 포함한 덴드리머 및 Staff-type 고분자 단분자막의 분자거동 및 전기ㆍ화학적 특성)

  • 장정수
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.5
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    • pp.213-218
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    • 2003
  • We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films

  • Kim, Seung-Hyun;Woo, Hyun-Jung;Koo, Chang-Young;Yang, Jeong-Seung;Ha, Su-Min;Park, Dong-Yeon;Lee, Dong-Su;Ha, Jo-Woong
    • Journal of the Korean Ceramic Society
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    • v.39 no.4
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    • pp.341-345
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    • 2002
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

Improvement of Permeation of applied Multi-Layer Encapsulation of thin films on Ethylene Terephthalate(PET) (고분자 기판위의 다층 보호막의 성능 평가)

  • Kim, Jong-Hwan;Han, Jin-Woo;Kang, Hee-Jin;Kim, Jong-Yeon;Moon, Hyun-Chan;Choi, Sung-Ho;Park, Kwang-Bum;Kim, Tae-Ha;Kim, Hwi-Woon;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.60-61
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    • 2006
  • In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. Results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLEO) applications.

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Influence of Deposition Parameters on Film Hardness for Newly Synthesized BON Thin Film by Low Frequency R.F. PEMOCVD

  • G.C. Chen;J.-H. Boo;Kim, Y.J.;J.G. Han
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.73-73
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    • 2001
  • Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

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