• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.283-289
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• 2003

In this paper, we proposed novel multilayer photonic bandgap(PBG) structure using DSL(Descended Signal Line). From measurement result, the proposed PBG structure using DSL is reduced 72 % at size and increased 13 % at bandwidth compared to typical multilayer DGS(Defected Ground Structure). It is also reduced 42 % at size and increased 23 % at bandwidth compared to PBG structure using EGP(Elevated Ground Plane). In case of measurement for manufactured six PBG patterns, all patterns have the same cutoff frequency and bandstop characteristics. So it can be used for bandstop filter having very precise tolerance of below 300 MHz at 20 ㎓ if it is applied to real product and this filter will be useful for small microwave integrated circuit and module development.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.11
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• pp.1013-1019
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• 2011

Sound attenuation of periodically arranged cylindrical rods is studied numerically and experimentally. Cross section of the cylinder is circular and arrays are in a square lattice. Cylinders are made of steel, and consist of five groups with different diameters from 27.2 mm to 48 mm. Each group has 5 rows, while number of cylinders in a row varies from 17 to 31. The area filling fraction is about 60~61 %, which leads to the stop bandgap(2.9 kHz ~ 8.4 kHz). Sound attenuation is computed using two-dimensional BEM, and measurement is done by using a speaker and microphones in a semi-anechoic room. Comparison of the results by BEM and experiment shows that attenuation spectra are qualitatively in agreement, although experiment gives higher attenuations than BEM. After results by BEM are scaled up in accordance with cylinder diameter, it is observed that attenuation curves are in good agreement, which confirms that analysis by BEM is done correctly. It is also found that the measured bandgaps are shifted toward lower frequency by 0.5 kHz ~ 1.2 kHz, when compared to the predictions obtained from infinitely repeated two-dimensional cylinder arrays.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• Current Photovoltaic Research
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• v.8 no.2
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• pp.50-53
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• 2020

GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce³⁺ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.137-142
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• 2008

The band-gap reference voltage generator which can be operated by low voltage is proposed in this paper. The proposed BGR circuit can be realized in logic process by using parasitic NPN BJTs because a $Low-V_T$ transistors are not necessary. The proposed BGR circuit is designed and fabricated using $0.18{\mu}m$ triple-well process. The mean voltage of measured VREF is 0.72V and the three sigma$(3{\sigma})$ is 45.69mv.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.317-328
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• 2017

This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Korean Journal of Optics and Photonics
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• v.21 no.5
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• pp.200-205
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• 2010

We report temperature and strain sensing characteristics of two kinds of in-line fiber interferometers. One interferometer consists of a section of Hollow Optical Fiber(HOF) spliced between two Photonic Bandgap Fibers(PBGF) and the other is built by splicing a section of HOF between two Large Mode Area-Photonic Crystal Fibers(LMA-PCF). To minimize the splice losses, we carefully optimized the heating time and arc current of the splicer so as not to collapse the air holes of the fiber. It is found that the first interferometer has a temperature sensitivity of 15.4 pm/$^{\circ}C$ and a strain sensitivity of 0.24 pm/${\mu}\varepsilon$. The other interferometer exhibits a temperature sensitivity of 17.4 pm/$^{\circ}C$ and a strain sensitivity of 0.2 pm/${\mu}\varepsilon$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.375-378
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• 2013

A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip's $0.18{\mu}m$ EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current-mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is $20.5ppm/^{\circ}C$. The VREF voltage has a mean of 1.181V and its three sigma ($3{\sigma}$) value is 71.7mV.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.