Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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A Bandgap Reference Voltage Generator Design for Low Voltage SoC

저전압 SoC용 밴드갭 기준 전압 발생기 회로 설계

  • Published : 2008.01.31
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Abstract

The band-gap reference voltage generator which can be operated by low voltage is proposed in this paper. The proposed BGR circuit can be realized in logic process by using parasitic NPN BJTs because a $Low-V_T$ transistors are not necessary. The proposed BGR circuit is designed and fabricated using $0.18{\mu}m$ triple-well process. The mean voltage of measured VREF is 0.72V and the three sigma$(3{\sigma})$ is 45.69mv.

본 논문에서는 $Low-V_T$ 트랜지스터가 필요 없는 로직공정으로 Parasitic NPN BJT를 이용하여 저 전압에서 동작 가능한 밴드갭 기준전압 발생기 회로를 제안하였다. $0.18{\mu}m$ triple-well 공정을 사용한 BGR회로를 측정 한 결과 VREF의 평균전압은 0.72V $3{\sigma}$는 45.69mV로 양호하게 측정되었다.

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References

  1. H. Banba et al., 'A CMOS Subbandgap Reference Circuit with 1-V Power Supply Voltage', IEEE Journal of Solid-State Circuits, vol.39, issue 1, pp.252-255, Jan. 2004 https://doi.org/10.1109/JSSC.2003.820882
  2. H. Banba et al., 'A CMOS Bandgap Reference Circuit with Sub-1-V Operation', IEEE Journal of Solid-State Circuits, vol.34, no.5, pp.670-674, May 1999 https://doi.org/10.1109/4.760378
  3. Seong-Ik Cho et al., 'A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area', Current Applied Physics, volume 7, issue 1, pp.92-95, Jan. 2007 https://doi.org/10.1016/j.cap.2006.02.008
  4. Won-Jae Yi et al., 'UHF RFID 태그 칩용 저전력 EEPROM 설계', 한국해양정보통신학회 논문지, 제10권, 제3호, pp.486-495, Mar. 2006
  5. Seung-Myun Back et al., '넓은 전압 범위와 개선된 파워-업 특성을 가지는 밴드갭 기준전압 발생기의 스타트-업 회로', 한국해양정보통신학회 논문지, 제11권, 제8호, pp.1544-1551, Aug. 2007