• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.141-146
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• 2002

The effect of the wide-bandgap Schottky barrier enhancement cap layer on the performance of metal-semiconductor-metal photodetectors (MSMPD's) is presented. Judged by the dc characteristics, no considerable increase in recombination loss of carriers is resulted by the incorporation of the cap layer. However, about 45% of the detection efficiency is lost for the cap-layered MSMPD's even with a graded layer incorporated under pulse operation, and it was found to be due mainly to the capturing and slow release of the photocarriers at the heterointerface. The loss mechanism of the pulse detection efficiency is believed to be responsible for the intersymbol interference and the increased bit-error-rate (BER) observed in MSMPD's when used with a high bit rate pseudo-random-bit-stream (PRBS) data pattern.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.233-234
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• 2008

Radiation characteristics of a microstrip patch antenna integrated with a UC-EBG (Uniplanar Compact Electromagnetic Bandgap) structure and a Mushroom EBG structure are compared. Radiation characteristics of a patch antenna integrated with a Mushroom EBG structure are better than those of a patch antenna integrated with a UC-EBG structure.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.189-192
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• 2002

In this work, a Voltage-to-Frequency Converter.(VFC) in which the output frequency is proportional to the input voltage is proposed. To obtain temperature stable characteristics the VFC is designed by using two bandgap references. The difference between simulated and calculated values is less than about 5% in output characteristics. In the VFC using BiCMOS the temperature variation of sample output frequencies is less than $\pm$0.5% in the temperature range -$25^{\circ}C$ to 75$^{\circ}C$. And the CMOS VFC has error less than $\pm$0.8% in the temperature range -$25^{\circ}C$ to 75'$^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.7
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• pp.991-996
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• 2010

Blue-green and green LEDs have been successfully fabricated grown by MBE, which has introduced the $ZnS_ySe_{1-x-y}:Te_x$ (x=0.04, y~0.11-0.14) ternary epilayer as an active layer. From the I-V characteristics, the built-in voltage (~2.1 V) is very small compared to other wide bandgap LEDs, such as commercial InGaN-based LEDs (>3.2 V). From the C-V profiling, the effective carrier concentration in the p-type ZnMgSSe cladding layer was evaluated as ${\sim}2.8{\times}10^{16}\;cm^{-3}$ for the present LEDs.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.55-60
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• 2021

In order to produce wearable displays with high adhesion while maintaining flexible characteristics, the adhesive method using electro plating method was carried out. Laser lift-off (LLO) transcription was also used to remove sapphire substrates from LEDs bonded to fibers. Afterwards, the SEM and EDS data of the sample, which conducted the adhesion method using electro plating, confirmed that copper actually grows through the lattice of the fiber fabric to secure the light source and fiber. The adhesion characteristics of copper were checked using Universal testing machine (UTM). After plating adhesion, the characteristics of the LLO transcription process completed and the LED without the transcription process were compared using probe station. The electroluminescence (EL) according to the enhanced current was measured to check the characteristics of the light source after the process. As the current increases, the temperature rises and the bandgap decreases, so it was confirmed that the spectrum shifted. In addition, the change in the electrical characteristics of the samples according to the radius change is confirmed using probe station. The radius strain also had mechanical strength that copper could withstand bending stress, so the Vf variation was measured below 6%. Based on these results, it is expected that it will be applied to batteries, catalysts, and solar cells that require flexibility as well as wearable displays, contributing to the development of wearable devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.3 s.94
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• pp.300-310
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• 2005

In this paper we propose the compact three-layer EBG structure. The unit cell of the proposed EBG structure is composed of a square patch in the upper layer and a square ring stripline in the lower layer that are connected to the ground plane through conducting vias. Reflection phase analysis method and tangential transmission method were considered to accomplish effective EM simulation and measurement. EM simulation results indicate that bandgap characteristics of the EBG structure using both methods is nearly identical. Parametric studies have been performed with the EM simulator to analyze the properties of the EBG structure by investigating the phase shift of the normally incident plane wave, and the transmission measurements between simple monopole antennas positioned near the EBGstructure have been done. The operating fiefuency bandgap of the proposed EBG structure is about 34 $\%$ lower than the conventional EBG structure with the same size. Measured results show bandgap from 0.930 GHz to 0.945 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.182-189
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• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.486-492
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• 2020

The method for preparing a perovskite-type bismuth ferrite (BFO) photocatalyst which reacts to visible LED light and the characteristics of visible light photocatalysis were investigated. BFO was prepared according to the sol-gel method. The prepared BFO consisted mainly of BiFeO₃ structure and formed a nano-sized crystal including Bi₂₄Fe₂O₃₉ structure. The BFO nano crystallines were identified from the UV-visible diffuse reflectance spectra to absorb UV and visible light up to about 600 nm. The bandgap of the BFO determined from the diffuse reflectance spectrum was about 2.2 eV. Formaldehyde was decomposed by the photoreaction of BFO photocatalysts with the visible light LED lamps with wavelengths of 585 nm and 613 nm. The narrow bandgap of BFO led to elicit BFO photocatalytic activity in visible LED light.

• Journal of Powder Materials
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• v.26 no.3
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• pp.237-242
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• 2019

In this study, ultrasonic spray pyrolysis combined with salt-assisted decomposition, a process that adds sodium nitrate ($NaNO_3$) into a titanium precursor solution, is used to synthesize nanosized titanium dioxide ($TiO_2$) particles. The added $NaNO_3$ prevents the agglomeration of the primary nanoparticles in the pyrolysis process. The nanoparticles are obtained after a washing process, removing $NaNO_3$ and NaF from the secondary particles, which consist of the salts and $TiO_2$ nanoparticles. The effects of pyrolysis temperature on the size, crystallographic characteristics, and bandgap energy of the synthesized nanoparticles are systematically investigated. The synthesized $TiO_2$ nanoparticles have a size of approximately 2-10 nm a bandgap energy of 3.1-3.25 eV, depending on the synthetic temperature. These differences in properties affect the photocatalytic activities of the synthesized $TiO_2$ nanoparticles.